AAAAAA

   
Results: 1-24 |
Results: 24
Influence of growth temperature and thickness of AlGaN caps on electron transport in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy
Authors: Elsass, CR Poblenz, C Heying, B Fini, P Petroff, PM DenBaars, SP Mishra, UK Speck, JS Saxler, A Elhamrib, S Mitchel, WC
Citation: Cr. Elsass et al., Influence of growth temperature and thickness of AlGaN caps on electron transport in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy, JPN J A P 1, 40(11), 2001, pp. 6235-6238
Hybridization of a two-dimensional electron-hole system in InAs/GaSb quantum wells
Authors: Lo, I Tsay, SF Chiang, JC Chang, YC Tu, LW Mitchel, WC
Citation: I. Lo et al., Hybridization of a two-dimensional electron-hole system in InAs/GaSb quantum wells, CHIN J PHYS, 39(5), 2001, pp. L387-L392
Effects of substrate surface preparation on chemical vapor deposition growth of 4H-SiC epitaxial layers
Authors: Saddow, SE Schattner, TE Brown, J Grazulis, L Mahalingam, K Landis, G Bertke, R Mitchel, WC
Citation: Se. Saddow et al., Effects of substrate surface preparation on chemical vapor deposition growth of 4H-SiC epitaxial layers, J ELEC MAT, 30(3), 2001, pp. 228-234
Effects of process parameter variations on the removal rate in chemical mechanical polishing of 4H-SiC
Authors: Nelson, CL Mitchel, WC Hengehold, RL
Citation: Cl. Nelson et al., Effects of process parameter variations on the removal rate in chemical mechanical polishing of 4H-SiC, J ELEC MAT, 30(10), 2001, pp. 1271-1275
Thermal effect on quantum confinement in ZnS0.06Se0.94/Zn0.8Cd0.2Se quantum wells
Authors: Lo, I Lee, KH Tu, LW Tsai, JK Mitchel, WC Tu, RC Su, YK
Citation: I. Lo et al., Thermal effect on quantum confinement in ZnS0.06Se0.94/Zn0.8Cd0.2Se quantum wells, SOL ST COMM, 120(4), 2001, pp. 155-160
Raman scattering from LO phonon-plasmon coupled modes and Hall-effect in n-type silicon carbide 4H-SiC
Authors: Chafai, M Jaouhari, A Torres, A Anton, R Martin, E Jimenez, J Mitchel, WC
Citation: M. Chafai et al., Raman scattering from LO phonon-plasmon coupled modes and Hall-effect in n-type silicon carbide 4H-SiC, J APPL PHYS, 90(10), 2001, pp. 5211-5215
Optical characterization of 4H-SiC by far ultraviolet spectroscopic ellipsometry
Authors: Lim, SG Jackson, TN Mitchel, WC Bertke, R Freeouf, JL
Citation: Sg. Lim et al., Optical characterization of 4H-SiC by far ultraviolet spectroscopic ellipsometry, APPL PHYS L, 79(2), 2001, pp. 162-164
High mobility in n-type GaN substrates
Authors: Saxler, A Look, DC Elhamri, S Sizelove, J Mitchel, WC Sung, CM Park, SS Lee, KY
Citation: A. Saxler et al., High mobility in n-type GaN substrates, APPL PHYS L, 78(13), 2001, pp. 1873-1875
Electron transport in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy
Authors: Elsass, CR Smorchkova, IP Ben, HY Haus, E Poblenz, C Fini, P Maranowski, K Petroff, PM DenBaars, SP Mishra, UK Speck, JS Saxler, A Elhamri, S Mitchel, WC
Citation: Cr. Elsass et al., Electron transport in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy, JPN J A P 2, 39(10B), 2000, pp. L1023-L1025
Electrical transport of an AlGaN/GaN two-dimensional electron gas
Authors: Saxler, A Debray, P Perrin, R Elhamri, S Mitchel, WC Elsass, CR Smorchkova, LP Heying, B Haus, E Fini, P Ibbetson, JP Keller, S Petroff, PM DenBaars, SP Mishra, UK Speck, JS
Citation: A. Saxler et al., Electrical transport of an AlGaN/GaN two-dimensional electron gas, MRS I J N S, 5, 2000, pp. NIL_532-NIL_537
Persistent photoconductivity study in a high mobility AlGaN/GaN heterostructure
Authors: Elhamri, S Saxler, A Mitchel, WC Elsass, CR Smorchkova, IP Heying, B Haus, E Fini, P Ibbetson, JP Keller, S Petroff, PM DenBaars, SP Mishra, UK Speck, JS
Citation: S. Elhamri et al., Persistent photoconductivity study in a high mobility AlGaN/GaN heterostructure, J APPL PHYS, 88(11), 2000, pp. 6583-6588
Heavy doping effects in Mg-doped GaN
Authors: Kozodoy, P Xing, HL DenBaars, SP Mishra, UK Saxler, A Perrin, R Elhamri, S Mitchel, WC
Citation: P. Kozodoy et al., Heavy doping effects in Mg-doped GaN, J APPL PHYS, 87(4), 2000, pp. 1832-1835
Ionization energies and electron mobilities in phosphorus- and nitrogen-implanted 4H-silicon carbide
Authors: Capano, MA Cooper, JA Melloch, MR Saxler, A Mitchel, WC
Citation: Ma. Capano et al., Ionization energies and electron mobilities in phosphorus- and nitrogen-implanted 4H-silicon carbide, J APPL PHYS, 87(12), 2000, pp. 8773-8777
Characterization of an AlGaN/GaN two-dimensional electron gas structure
Authors: Saxler, A Debray, P Perrin, R Elhamri, S Mitchel, WC Elsass, CR Smorchkova, IP Heying, B Haus, E Fini, P Ibbetson, JP Keller, S Petroff, PM DenBaars, SP Mishra, UK Speck, JS
Citation: A. Saxler et al., Characterization of an AlGaN/GaN two-dimensional electron gas structure, J APPL PHYS, 87(1), 2000, pp. 369-374
Very long wavelength infrared type-II detectors operating at 80 K
Authors: Mohseni, H Tahraoui, A Wojkowski, J Razeghi, M Brown, GJ Mitchel, WC Park, YS
Citation: H. Mohseni et al., Very long wavelength infrared type-II detectors operating at 80 K, APPL PHYS L, 77(11), 2000, pp. 1572-1574
Effects of conduction band offset on two-dimensional electron gas in delta-doped InGaAs-based heterostructures
Authors: Ahoujja, M Mitchel, WC Elhamri, S Newrock, RS Lo, I
Citation: M. Ahoujja et al., Effects of conduction band offset on two-dimensional electron gas in delta-doped InGaAs-based heterostructures, CHIN J PHYS, 37(5), 1999, pp. 519-527
Shallow acceptor levels in 4H- and 6H-SiC
Authors: Smith, SR Evwaraye, AO Mitchel, WC Capano, MA
Citation: Sr. Smith et al., Shallow acceptor levels in 4H- and 6H-SiC, J ELEC MAT, 28(3), 1999, pp. 190-195
Effect of electron-electron interactions on a two-dimensional electron gasin II-VIZnS0.06Se0.94/Zn0.8Cd0.2Se quantum wells
Authors: Lo, I Chen, SJ Tu, LW Mitchel, WC Tu, RC Su, YK
Citation: I. Lo et al., Effect of electron-electron interactions on a two-dimensional electron gasin II-VIZnS0.06Se0.94/Zn0.8Cd0.2Se quantum wells, PHYS REV B, 60(16), 1999, pp. R11281-R11284
Study of interfaces in GaInSb InAs quantum wells by high-resolution X-ray diffraction and reciprocal space mapping
Authors: Tomich, DH Mitchel, WC Chow, P Tu, CW
Citation: Dh. Tomich et al., Study of interfaces in GaInSb InAs quantum wells by high-resolution X-ray diffraction and reciprocal space mapping, J CRYST GR, 202, 1999, pp. 868-871
Fermi level control and deep levels in semi-insulating 4H-SiC
Authors: Mitchel, WC Perrin, R Goldstein, J Saxler, A Roth, M Smith, SR Solomon, JS Evwaraye, AO
Citation: Wc. Mitchel et al., Fermi level control and deep levels in semi-insulating 4H-SiC, J APPL PHYS, 86(9), 1999, pp. 5040-5044
Polarization-enhanced Mg doping of AlGaN/GaN superlattices
Authors: Kozodoy, P Smorchkova, YP Hansen, M Xing, HL DenBaars, SP Mishra, UK Saxler, AW Perrin, R Mitchel, WC
Citation: P. Kozodoy et al., Polarization-enhanced Mg doping of AlGaN/GaN superlattices, APPL PHYS L, 75(16), 1999, pp. 2444-2446
Ballistic transport of electrons in T-shaped quantum waveguides
Authors: Debray, P Raichev, OE Rahman, M Akis, R Mitchel, WC
Citation: P. Debray et al., Ballistic transport of electrons in T-shaped quantum waveguides, APPL PHYS L, 74(5), 1999, pp. 768-770
Effect of threading dislocations on electron transport in In0.24Ga0.76N/GaN multiple quantum wells
Authors: Lo, I Hsieh, KY Hwang, SL Tu, LW Mitchel, WC Saxler, AW
Citation: I. Lo et al., Effect of threading dislocations on electron transport in In0.24Ga0.76N/GaN multiple quantum wells, APPL PHYS L, 74(15), 1999, pp. 2167-2169
Aluminum gallium nitride short-period superlattices doped with magnesium
Authors: Saxler, A Mitchel, WC Kung, P Razeghi, M
Citation: A. Saxler et al., Aluminum gallium nitride short-period superlattices doped with magnesium, APPL PHYS L, 74(14), 1999, pp. 2023-2025
Risultati: 1-24 |