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Results: 1-9 |
Results: 9
Mosfet modeling gets physical - Toward sub-100-nm MOSFET models for circuit simulation that accurately represent new physical phenomena
Authors: Miura-Mattausch, M Mattausch, J Arora, N Yang, C
Citation: M. Miura-mattausch et al., Mosfet modeling gets physical - Toward sub-100-nm MOSFET models for circuit simulation that accurately represent new physical phenomena, IEEE CIRC D, 17(6), 2001, pp. 29-36
Physical modeling of the reverse-short-channel effect for circuit simulation
Authors: Miura-Mattausch, M Suetake, M Mattausch, HJ Kumashiro, S Shigyo, N Odanaka, S Nakayama, N
Citation: M. Miura-mattausch et al., Physical modeling of the reverse-short-channel effect for circuit simulation, IEEE DEVICE, 48(10), 2001, pp. 2449-2452
Evidence for an additional noise source modifying conventional 1/f frequency dependence in sub-mu m metal-oxide-semiconductor field-effect transistors
Authors: Ueno, H Kitamura, T Matsumoto, S Okagaki, T Miura-Mattausch, M Abe, H Hamasaki, T
Citation: H. Ueno et al., Evidence for an additional noise source modifying conventional 1/f frequency dependence in sub-mu m metal-oxide-semiconductor field-effect transistors, APPL PHYS L, 78(3), 2001, pp. 380-382
Superstable neutral electron traps in nonplanar thermal oxides on monocrystalline silicon
Authors: Ono, T Miura-Mattausch, M Baumgartner, H Mattausch, HJ
Citation: T. Ono et al., Superstable neutral electron traps in nonplanar thermal oxides on monocrystalline silicon, APPL PHYS L, 76(16), 2000, pp. 2298-2300
Influence of laser intensity on carrier generation in MOSFETs
Authors: Tanaka, M Okagaki, T Miura-Mattausch, M
Citation: M. Tanaka et al., Influence of laser intensity on carrier generation in MOSFETs, PHYSICA B, 272(1-4), 1999, pp. 554-557
Special issue on TCAD for semiconductor industries - Foreword
Authors: Miura-Mattausch, M
Citation: M. Miura-mattausch, Special issue on TCAD for semiconductor industries - Foreword, IEICE TR EL, E82C(6), 1999, pp. 789-790
Worst best device and circuit performances for MOSFETs determined from process fluctuations
Authors: Prigge, O Suetake, M Miura-Mattausch, M
Citation: O. Prigge et al., Worst best device and circuit performances for MOSFETs determined from process fluctuations, IEICE TR EL, E82C(6), 1999, pp. 997-1002
Physically-based threshold voltage determination for MOSFET's of all gate lengths
Authors: Tsuno, M Suga, M Tanaka, M Shibahara, K Miura-Mattausch, M Hirose, M
Citation: M. Tsuno et al., Physically-based threshold voltage determination for MOSFET's of all gate lengths, IEEE DEVICE, 46(7), 1999, pp. 1429-1434
Transconductance oscillations in metal-oxide-semiconductor field-effect transistors with thin silicon-on-insulator originated by quantized energy levels
Authors: Takahashi, T Miura-Mattausch, M Omura, Y
Citation: T. Takahashi et al., Transconductance oscillations in metal-oxide-semiconductor field-effect transistors with thin silicon-on-insulator originated by quantized energy levels, APPL PHYS L, 75(10), 1999, pp. 1458-1460
Risultati: 1-9 |