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1-19
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Results: 19
Authors:
Disseix, P
Payen, C
Leymarie, J
Vasson, A
Mollot, F
Citation: P. Disseix et al., Thermally detected optical absorption, reflectance and photo-reflectance of In(As,P)/InP quantum wells grown by gas source molecular beam epitaxy, OPT MATER, 17(1-2), 2001, pp. 197-200
Authors:
Wallart, X
Deresmes, D
Mollot, F
Citation: X. Wallart et al., Growth of strained Ga1-xInxP layers on GaP (001) by gas source molecular beam epitaxy: similarities and differences with the growth of strained arsenides, J CRYST GR, 227, 2001, pp. 255-259
Authors:
Lampin, JF
Desplanque, L
Mollot, F
Citation: Jf. Lampin et al., Detection of picosecond electrical pulses using the intrinsic Franz-Keldysh effect, APPL PHYS L, 78(26), 2001, pp. 4103-4105
Authors:
Wallart, X
Deresmes, D
Mollot, F
Citation: X. Wallart et al., Relationship between surface reconstruction and morphology of strained Ga1-xInxP layers grown on GaP (001) by gas-source molecular-beam epitaxy, APPL PHYS L, 78(19), 2001, pp. 2961-2963
Authors:
Wallart, X
Mollot, F
Citation: X. Wallart et F. Mollot, Strained layer growth of Ga1-xInxP on GaAs (100) and GaP (100) substrates, APPL SURF S, 166(1-4), 2000, pp. 446-450
Authors:
Borgarino, M
Plana, R
Fendler, M
Vilcot, JP
Mollot, F
Barette, J
Decoster, D
Graffeuil, J
Citation: M. Borgarino et al., Low frequency noise behaviour of InP/InGaAs heterojunction bipolar waveguide phototransistors, SOL ST ELEC, 44(1), 2000, pp. 59-62
Authors:
Disseix, P
Payen, C
Leymarie, J
Vasson, A
Mollot, F
Citation: P. Disseix et al., Thermally detected optical absorption, reflectance, and photoreflectance of In(As,P)/InP quantum wells grown by gas source molecular beam epitaxy, J APPL PHYS, 88(8), 2000, pp. 4612-4618
Authors:
Melique, X
Maestrini, A
Farre, R
Mounaix, P
Favreau, M
Vanbesien, O
Goutoule, JM
Mollot, F
Beaudin, G
Narhi, T
Lippens, D
Citation: X. Melique et al., Fabrication and performance of InP-based heterostructure barrier varactorsin a 250-GHz waveguide tripler, IEEE MICR T, 48(6), 2000, pp. 1000-1006
Authors:
Wallart, X
Priester, C
Deresmes, D
Mollot, F
Citation: X. Wallart et al., Interplay between segregation, roughness, and local strains in the growth of Ga0.75In0.25P alloy, APPL PHYS L, 77(2), 2000, pp. 253-255
Authors:
Wallart, X
Schuler, O
Deresmes, D
Mollot, F
Citation: X. Wallart et al., Composition effect on the growth mode, strain relaxation, and critical thickness of tensile Ga1-xInxP layers, APPL PHYS L, 76(15), 2000, pp. 2080-2082
Authors:
Mollot, F
Lamin, JF
Schuler, O
Citation: F. Mollot et al., Some potentialities of gas-source molecular beam epitaxy with aluminium and phosphorus, J PHYS IV, 9(P2), 1999, pp. 145-150
Authors:
Zaknoune, M
Schuler, O
Piotrowicz, S
Mollot, F
Theron, D
Crosnier, Y
Citation: M. Zaknoune et al., High-power V-band Ga0.51In0.49P/In0.2Ga0.8As pseudomorphic HEMT grown by gas source molecular beam epitaxy, IEEE MICR G, 9(1), 1999, pp. 28-30
Authors:
Sion, C
Mollot, F
Gouy, JP
Decoster, D
Citation: C. Sion et al., Characteristic temperature and threshold current comparison of phosphorus-and-aluminum-based 1.3 mu m lasers by static and impedance measurements, MICROW OPT, 23(3), 1999, pp. 156-159
Authors:
Schuler, O
Wallart, X
Mollot, F
Citation: O. Schuler et al., A gas-source MBE growth study of strained Ga1-xInxP layers on GaAs, J CRYST GR, 202, 1999, pp. 280-283
Authors:
Duez, V
Vanbesien, O
Lippens, D
Vignaud, D
Wallart, X
Mollot, F
Citation: V. Duez et al., Type II and mixed type I-II radiative recombinations in AlInAs-InP heterostructures, J APPL PHYS, 85(4), 1999, pp. 2202-2206
Authors:
Zaknoune, M
Schuler, O
Mollot, F
Theron, D
Crosnier, Y
Citation: M. Zaknoune et al., 0.1 mu m Ga0.51In0.49P/In0.2Ga0.8As PHEMT grown by GSMBE with high DC and RF performances, ELECTR LETT, 35(6), 1999, pp. 501-502
Authors:
Zaknoune, M
Schuler, O
Mollot, F
Theron, D
Crosnier, Y
Citation: M. Zaknoune et al., 0.1 mu m (Al0.5Ga0.5)(0.5)In0.5P/In0.2Ga0.8As/GaAs PHEMT grown by gas source molecular beam epitaxy, ELECTR LETT, 35(20), 1999, pp. 1776-1777
Authors:
Teissier, R
Sicault, D
Goujon, A
Pelouard, JL
Pardo, F
Mollot, F
Citation: R. Teissier et al., Radiative emission rate modulation in semiconductor heterostructures coupled to a mirror: A probe of ballistic electron mean free path, APPL PHYS L, 75(1), 1999, pp. 103-105
Authors:
Melique, X
Mann, C
Mounaix, P
Thornton, J
Vanbesien, O
Mollot, F
Lippens, D
Citation: X. Melique et al., 5-mW and 5% efficiency 216-GHz InP-based heterostructure barrier varactor tripler, IEEE MICR G, 8(11), 1998, pp. 384-386
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