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Results: 51-75/90
Authors:
Monemar, B
Citation: B. Monemar, III-V nitrides - important future electronic materials, J MAT S-M E, 10(4), 1999, pp. 227-254
Authors:
Son, NT
Chen, WM
Lindstrom, JL
Monemar, B
Janzen, E
Citation: Nt. Son et al., Carbon-vacancy related defects in 4H-and 6H-SIC, MAT SCI E B, 61-2, 1999, pp. 202-206
Authors:
Mamutin, VV
Toropov, AA
Kartenko, NF
Ivanov, SV
Wagner, A
Monemar, B
Citation: Vv. Mamutin et al., MBE GaN grown on (101) NdGaO3 substrates, MAT SCI E B, 59(1-3), 1999, pp. 56-59
Authors:
Monemar, B
Citation: B. Monemar, Luminescence in III-nitrides, MAT SCI E B, 59(1-3), 1999, pp. 122-132
Authors:
Shmidt, NM
Lebedev, AV
Lundin, WV
Pushnyi, BV
Ratnikov, VV
Shubina, TV
Tsatsul'nikov, AA
Usikov, AS
Pozina, G
Monemar, B
Citation: Nm. Shmidt et al., Effect of Si doping on structural, photoluminescence and electrical properties of GaN, MAT SCI E B, 59(1-3), 1999, pp. 195-197
Authors:
Godlewski, M
Suski, T
Grzegory, I
Porowski, S
Bergman, JP
Chen, WM
Monemar, B
Citation: M. Godlewski et al., Mechanism of radiative recombination in acceptor-doped bulk GaN crystals, PHYSICA B, 274, 1999, pp. 39-42
Authors:
Buyanova, IA
Hallberg, T
Murin, LI
Markevich, VP
Monemar, B
Lindstrom, JL
Citation: Ia. Buyanova et al., Effect of high-temperature electron irradiation on the formation of radiative defects in silicon, PHYSICA B, 274, 1999, pp. 528-531
Authors:
Son, NT
Hai, PN
Huy, PT
Gregorkiewicz, T
Ammerlaan, CAJ
Lindstrom, JL
Chen, WM
Monemar, B
Janzen, E
Citation: Nt. Son et al., Electron-paramagnetic-resonance studies of defects in electron-irradiated p-type 4H and 6H SiC, PHYSICA B, 274, 1999, pp. 655-658
Authors:
Gil, B
Meyer, BK
Monemar, B
Citation: B. Gil et al., Papers presented at the Third International Conference on Nitride Semiconductors (ICNS'99) Montpellier, France, July 5 to 9, 1999 - Chairmen's preface, PHYS ST S-B, 216(1), 1999, pp. 3-3
Authors:
Pozina, G
Bergman, JP
Paskova, T
Monemar, B
Citation: G. Pozina et al., Dynamics of the bound excitons in GaN epilayers grown by hydride vapor phase epitaxy, PHYS ST S-B, 216(1), 1999, pp. 45-49
Authors:
Buyanova, IA
Chen, WM
Pozina, G
Monemar, B
Xin, HP
Tu, CW
Citation: Ia. Buyanova et al., Mechanism for light emission in GaNAs/GaAs structures grown by molecular beam epitaxy, PHYS ST S-B, 216(1), 1999, pp. 125-129
Authors:
Shubina, TV
Mamutin, VV
Vekshin, VA
Ratnikov, VV
Toropov, AA
Sitnikova, AA
Ivanov, SV
Karlsteen, M
Sodervall, U
Willander, M
Pozina, G
Bergman, JP
Monemar, B
Citation: Tv. Shubina et al., Optical properties of an AlInN interface layer spontaneously formed in hexagonal InN/sapphire heterostructures, PHYS ST S-B, 216(1), 1999, pp. 205-209
Authors:
Pozina, G
Bergman, JP
Monemar, B
Mamutin, VV
Shubina, TV
Vekshin, VA
Toropov, AA
Ivanov, SV
Karlsteen, M
Willander, M
Citation: G. Pozina et al., Optical and structural characterization of Ga(In)N three-dimensional nanostructures grown by plasma-assisted molecular beam epitaxy, PHYS ST S-B, 216(1), 1999, pp. 445-450
Authors:
Son, NT
Chen, WM
Lindstrom, JL
Monemar, B
Janzen, E
Citation: Nt. Son et al., A complex defect related to the carbon vacancy in 4H and 6H SiC, PHYS SCR, T79, 1999, pp. 46-49
Authors:
Wagner, M
Buyanova, IA
Chen, WM
Monemar, B
Lindstrom, JL
Amano, H
Akasaki, I
Citation: M. Wagner et al., Magnetooptical investigations on electron irradiated GaN, PHYS SCR, T79, 1999, pp. 53-55
Authors:
Dalfors, J
Holtz, PO
Bergman, JP
Monemar, B
Amano, H
Akasaki, I
Citation: J. Dalfors et al., Investigation of InGaN/GaN quantum well structures by photoluminescence and photoluminescence excitation spectroscopy, PHYS SCR, T79, 1999, pp. 60-63
Authors:
Paskova, T
Svedberg, EB
Henry, A
Ivanov, IG
Yakimova, R
Monemar, B
Citation: T. Paskova et al., Thick GaN layers grown on A-plane sapphire substrates by hydride vapour phase epitaxy, PHYS SCR, T79, 1999, pp. 67-71
Authors:
Buyanova, IA
Wagner, M
Chen, WM
Monemar, B
Lindstrom, JL
Amano, H
Aksaki, I
Citation: Ia. Buyanova et al., Effect of electron irradiation on optical properties of gallium nitride, PHYS SCR, T79, 1999, pp. 72-75
Authors:
Pozina, G
Holtz, PO
Sernelius, B
Buyanov, AV
Radamson, HH
Madsen, LD
Monemar, B
Thordson, J
Andersson, TG
Citation: G. Pozina et al., Characteristics of Si delta-layers embedded in GaAs, PHYS SCR, T79, 1999, pp. 99-102
Authors:
Wongmanerod, S
Holtz, PO
Reginski, K
Bugaiski, M
Monemar, B
Citation: S. Wongmanerod et al., Photoluminescence studies of P-type modulation doped GaAs/AlGaAs quantum wells in the high doping regime, PHYS SCR, T79, 1999, pp. 120-122
Authors:
Son, NT
Hai, PN
Wagner, M
Chen, WM
Ellison, A
Hallin, C
Monemar, B
Janzen, E
Citation: Nt. Son et al., Optically detected magnetic resonance studies of intrinsic defects in 6H-SiC, SEMIC SCI T, 14(12), 1999, pp. 1141-1146
Authors:
Goldys, EM
Godlewski, M
Langer, R
Barski, A
Bergman, P
Monemar, B
Citation: Em. Goldys et al., Analysis of the red optical emission in cubic GaN grown by molecular-beam epitaxy, PHYS REV B, 60(8), 1999, pp. 5464-5469
Authors:
Buyanova, IA
Wagner, M
Chen, WM
Edwards, NV
Monemar, B
Lindstrom, JL
Bremser, MD
Davis, RF
Amano, H
Akasaki, I
Citation: Ia. Buyanova et al., Electronic structure of the 0.88-eV luminescence center in electron-irradiated gallium nitride, PHYS REV B, 60(3), 1999, pp. 1746-1751
Authors:
Toropov, AA
Shubina, TV
Sorokin, SV
Lebedev, AV
Kyutt, RN
Ivanov, SV
Karlsteen, M
Willander, M
Pozina, GR
Bergman, JP
Monemar, B
Citation: Aa. Toropov et al., Broadening of the excitonic mobility edge in a macroscopically disordered CdSe/ZnSe short-period superlattice, PHYS REV B, 59(4), 1999, pp. R2510-R2513
Authors:
Gil, B
Meyer, BK
Monemar, B
Citation: B. Gil et al., Papers presented at the Third International Conference on Nitride Semiconductors (ICNS'99) - Montpellier, France, July 5 to 9, 1999 - Growth and device applications to group-III nitrides - Chairmen's preface, PHYS ST S-A, 176(1), 1999, pp. 3-3