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Results:
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Results: 25
Authors:
Chaussende, D
Ferro, G
Monteil, Y
Citation: D. Chaussende et al., Vapour-liquid-solid mechanism for the growth of SiC homoepitaxial layers by VPE, J CRYST GR, 234(1), 2002, pp. 63-69
Authors:
Dumont, H
Auvray, L
Monteil, Y
Bouix, J
Citation: H. Dumont et al., Analysis of nitrogen incorporation mechanisms in GaAs1-xNx/GaAs epilayers grown by MOVPE, MAT SCI E B, 84(3), 2001, pp. 258-264
Authors:
Martinez-Guerrero, E
Daudin, B
Feuillet, G
Mariette, H
Genuist, Y
Fanget, S
Philippe, A
Dubois, C
Bru-Chevallier, C
Guillot, G
Nze, PA
Chassagne, T
Monteil, Y
Gamez-Cuatzin, H
Tardy, J
Citation: E. Martinez-guerrero et al., p and n type doping of cubic GaN on SiC(001), MAT SCI E B, 82(1-3), 2001, pp. 59-61
Authors:
Bru-Chevallier, C
Fanget, S
Philippe, A
Dubois, C
Martinez-Guerrero, E
Daudin, B
Nze, PA
Monteil, Y
Citation: C. Bru-chevallier et al., Optical properties of cubic gallium nitride on SiC/Si pseudo-substrates, PHYS ST S-A, 183(1), 2001, pp. 67-73
Authors:
Chaussende, D
Ferro, G
Monteil, Y
Brylinski, C
Bouix, J
Citation: D. Chaussende et al., Thermochemistry of silicon carbide growth by chemical transport reactions, J MATER SCI, 36(2), 2001, pp. 335-342
Authors:
Souliere, V
Dumont, H
Auvray, L
Monteil, Y
Citation: V. Souliere et al., Effect of V/III ratio and PH3 annealing on InAs dots grown by MOVPE on InP(001) step-bunched surfaces, J CRYST GR, 226(1), 2001, pp. 31-38
Authors:
Auvray, L
Dumont, H
Dazord, J
Monteil, Y
Bouix, J
Bru-Chevallier, C
Grenouillet, L
Citation: L. Auvray et al., Growth of GaAsN: surface study by AFM and optical properties, MAT SC S PR, 3(5-6), 2000, pp. 505-509
Authors:
Ferro, G
Monteil, Y
Citation: G. Ferro et Y. Monteil, Crystal growth in thin film of cubic silicon carbide, VIDE, 55(298), 2000, pp. 406
Authors:
Derycke, V
Pham, NP
Fonteneau, P
Soukiassian, P
Aboulet-Nze, P
Monteil, Y
Mayne, AJ
Dujardin, G
Gautier, J
Citation: V. Derycke et al., Self-organized 1D nanostructures on the beta-SiC(100) surface: silicon atomic lines and dimer vacancy chains, APPL SURF S, 162, 2000, pp. 413-418
Authors:
Dumont, H
Monteil, Y
Bouix, J
Citation: H. Dumont et al., Energy barrier for the growth transition step-flow/step-bunching during epitaxy of InP/InP, APPL SURF S, 161(1-2), 2000, pp. 286-290
Authors:
Borgi, K
Hjiri, M
Hassen, F
Maaref, H
Souliere, V
Monteil, Y
Citation: K. Borgi et al., Optical study of inverted interface in InP/InAlAs/InP structures grown by MOCVD, MICROEL ENG, 51-2, 2000, pp. 299-308
Authors:
Bentoumi, G
Deneuville, A
Bustarret, E
Daudin, B
Feuillet, G
Martinez, E
Aboughe-Nze, P
Monteil, Y
Citation: G. Bentoumi et al., Si doping of cubic heteroepitaxial GaN layers studied by Raman scattering, THIN SOL FI, 364(1-2), 2000, pp. 107-110
Authors:
Auvray, L
Dumont, H
Dazord, J
Monteil, Y
Bouix, J
Bru-Chevalier, C
Citation: L. Auvray et al., AFM study and optical properties of GaAsN/GaAs epilayers grown by MOVPE, J CRYST GR, 221, 2000, pp. 475-480
Authors:
Letartre, X
Rojo-Romeo, P
Tardy, J
Bejar, M
Gendry, M
Py, MA
Beck, M
Buhlmann, HJ
Ren, L
Villar, C
Sanz-Hervas, A
Serrano, JJ
Blanco, JM
Aguilar, M
Marty, O
Souliere, V
Monteil, Y
Citation: X. Letartre et al., Influence of strain compensation on structural and electrical properties of InAlAs/InGaAs HEMT structures grown on InP, JPN J A P 1, 38(2B), 1999, pp. 1169-1173
Authors:
Chaussende, D
Monteil, Y
Aboughe-nze, P
Brylinski, C
Bouix, J
Citation: D. Chaussende et al., Thermodynamical calculations on the chemical vapour transport of silicon carbide, MAT SCI E B, 61-2, 1999, pp. 98-101
Authors:
Ferro, G
Planes, N
Papaioannou, V
Chaussende, D
Monteil, Y
Stoemenos, Y
Camassel, J
Citation: G. Ferro et al., Role of SIMOX defects on the structural properties of beta-SiC/SIMOX, MAT SCI E B, 61-2, 1999, pp. 586-592
Authors:
Philippe, A
Bru-Chevallier, C
Gamez-Cuatzin, H
Guillot, G
Martinez-Guerrero, E
Feuillet, G
Daudin, B
Aboughe-Nze, P
Monteil, Y
Citation: A. Philippe et al., Optical study of cubic gallium nitride band-edge and relation with residual strain, PHYS ST S-B, 216(1), 1999, pp. 247-252
Authors:
Dumont, H
Auvray, L
Dazord, J
Monteil, Y
Bouix, J
Ougazzaden, A
Citation: H. Dumont et al., Growth mode and effect of carrier gas on In0.53Ga0.47As/InP surface morphology grown with trimethylarsine and arsine, APPL SURF S, 150(1-4), 1999, pp. 161-170
Authors:
Battut, V
Blanc, JP
Goumet, E
Souliere, V
Monteil, Y
Citation: V. Battut et al., NO2 sensor based on InP epitaxial thin layers, THIN SOL FI, 348(1-2), 1999, pp. 266-272
Authors:
Gamez-Cuatzin, H
Tardy, J
Rojo-Romeo, P
Philippe, A
Bru-Chevallier, C
Souifi, A
Guillot, G
Martinez-Guerrero, E
Feuillet, G
Daudin, B
Aboughe-Nze, P
Monteil, Y
Citation: H. Gamez-cuatzin et al., Electroluminescence characterization of cubic gallium nitride p-n junctions grown on SiC/Si substrates by MBE, PHYS ST S-A, 176(1), 1999, pp. 131-135
Authors:
Martinez-Guerrero, E
Chabuel, F
Jalabert, D
Daudin, B
Feuillet, G
Mariette, H
Aboughe-Nze, P
Monteil, Y
Citation: E. Martinez-guerrero et al., Growth control of cubic GaN and GaAlN (GaInN) alloys by RHEED oscillations, PHYS ST S-A, 176(1), 1999, pp. 497-501
Authors:
Borgi, K
Hassen, F
Maaref, H
Dazord, J
Monteil, Y
Davenas, J
Citation: K. Borgi et al., Initial stages of InP/GaP (100) and (111)(A,B) grown by metal organic chemical vapor deposition, MICROELEC J, 30(4-5), 1999, pp. 347-351
Authors:
Dumont, H
Auvray, L
Dazord, J
Monteil, Y
Bouix, J
Ougazzaden, A
Citation: H. Dumont et al., Surface morphology, electrical and optical properties of In0.53Ga0.47As/InP grown by metalorganic vapor-phase epitaxy using trimethylarsine and arsine, J CRYST GR, 204(1-2), 1999, pp. 1-9
Authors:
Dumont, H
Auvray, L
Dazord, J
Souliere, V
Monteil, Y
Bouix, J
Ougazzaden, A
Citation: H. Dumont et al., Surface morphology of InGaAs and InP materials grown with trimethylarsenicand arsine on vicinal InP substrates, J CRYST GR, 197(4), 1999, pp. 755-761
Authors:
Dumont, H
Auvray, L
Dazord, J
Souliere, V
Monteil, Y
Bouix, J
Citation: H. Dumont et al., Strain-induced surface morphology of slightly mismatched InxGa1-xAs films grown on vicinal (100) InP substrates, J APPL PHYS, 85(10), 1999, pp. 7185-7190
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