AAAAAA

   
Results: 1-10 |
Results: 10
Nanoscale Coulomb blockade memory and logic devices
Authors: Mizuta, H Muller, HO Tsukagoshi, K Williams, D Durrani, Z Irvine, A Evans, G Amakawa, S Nakazato, K Ahmed, H
Citation: H. Mizuta et al., Nanoscale Coulomb blockade memory and logic devices, NANOTECHNOL, 12(2), 2001, pp. 155-159
Modelling background charge rearrangements near single-electron transistors as a Poisson process
Authors: Muller, HO Furlan, M Heinzel, T Ensslin, K
Citation: Ho. Muller et al., Modelling background charge rearrangements near single-electron transistors as a Poisson process, EUROPH LETT, 55(2), 2001, pp. 253-259
Coulomb blockade and disorder in 2D quantum dot arrays
Authors: Muller, HO Williams, DA Mizuta, H
Citation: Ho. Muller et al., Coulomb blockade and disorder in 2D quantum dot arrays, JPN J A P 2, 39(7B), 2000, pp. L723-L725
Simulating Si multiple tunnel junctions from pinch-off to ohmic conductance
Authors: Muller, HO Williams, DA Mizuta, H Durrani, ZAK
Citation: Ho. Muller et al., Simulating Si multiple tunnel junctions from pinch-off to ohmic conductance, MAT SCI E B, 74(1-3), 2000, pp. 36-39
Memory cell simulation on the nanometer scale
Authors: Muller, HO Mizuta, H
Citation: Ho. Muller et H. Mizuta, Memory cell simulation on the nanometer scale, IEEE DEVICE, 47(10), 2000, pp. 1826-1830
Strategy for off-current suppression in thin-film transistors
Authors: Muller, HO Alphenaar, BW
Citation: Ho. Muller et Bw. Alphenaar, Strategy for off-current suppression in thin-film transistors, JPN J A P 2, 38(12B), 1999, pp. L1525-L1527
Simulation of Si multiple tunnel junctions
Authors: Muller, HO Williams, DA Mizuta, H Durrani, ZAK Irvine, AC Ahmed, H
Citation: Ho. Muller et al., Simulation of Si multiple tunnel junctions, PHYSICA B, 272(1-4), 1999, pp. 85-87
Design and analysis of high-speed random access memory with Coulomb blockade charge confinement
Authors: Katayama, K Mizuta, H Muller, HO Williams, D Nakazato, K
Citation: K. Katayama et al., Design and analysis of high-speed random access memory with Coulomb blockade charge confinement, IEEE DEVICE, 46(11), 1999, pp. 2210-2216
Origin of yield problems of single electron devices based on evaporated granular films
Authors: Muller, HO Boero, M Vincent, JK Inkson, JC Mizuta, H Mulheran, PA
Citation: Ho. Muller et al., Origin of yield problems of single electron devices based on evaporated granular films, APPL PHYS L, 75(11), 1999, pp. 1634-1636
Detection of spin-flip relaxation using quantum point contacts
Authors: Alphenaar, BW Muller, HO Tsukagoshi, K
Citation: Bw. Alphenaar et al., Detection of spin-flip relaxation using quantum point contacts, PHYS REV L, 81(25), 1998, pp. 5628-5631
Risultati: 1-10 |