Authors:
YANABA K
MATSUMURA Y
NARUSHIMA T
IGUCHI Y
Citation: K. Yanaba et al., EFFECT OF ALLOYING ELEMENTS ON CARBON SOLUBILITY IN LIQUID SILICON EQUILIBRATED WITH SILICON-CARBIDE, Materials transactions, JIM, 39(8), 1998, pp. 819-823
Citation: G. He et al., SYNTHESIS AND ELECTRICAL PROPERTY MEASUREMENTS OF BA BETA-ALUMINA IN A BAO-MGO-AL2O3 SYSTEM, Nippon Seramikkusu Kyokai gakujutsu ronbunshi, 106(11), 1998, pp. 1048-1050
Authors:
YANABA K
AKASAKA M
TAKEUCHI M
WATANABE M
NARUSHIMA T
IGUCHI Y
Citation: K. Yanaba et al., SOLUBILITY OF CARBON IN LIQUID SILICON EQUILIBRATED WITH SILICON-CARBIDE, Materials transactions, JIM, 38(11), 1997, pp. 990-994
Citation: T. Narushima et al., HIGH-TEMPERATURE OXIDATION OF SILICON-CARBIDE AND SILICON-NITRIDE, Materials transactions, JIM, 38(10), 1997, pp. 821-835
Authors:
GANG H
HAYASAKA Y
NARUSHIMA T
GOTO T
HIRAI T
IGUCHI Y
Citation: H. Gang et al., PREPARATION OF SR BETA-ALUMINA IONIC CONDUCTORS AND THEIR AC-IMPEDANCE MEASUREMENTS, Nippon Seramikkusu Kyokai gakujutsu ronbunshi, 105(12), 1997, pp. 1067-1071
Citation: T. Narushima et al., NUMERICAL STUDY ON THE GROUND-STATE PHASE-DIAGRAM OF THE S=1 2 XXZ LADDER MODEL/, Journal of the Physical Society of Japan, 64(11), 1995, pp. 4322-4330
Authors:
NARUSHIMA T
KIKUCHI N
MARUYAMA M
ARASHI H
NISHINA Y
IGUCHI Y
Citation: T. Narushima et al., DEVELOPMENT OF IN-SITU OBSERVATION SYSTEM FOR OXIDE-FILMS FORMED DURING THERMAL-OXIDATION USING RAMAN-SPECTROSCOPY, Tetsu to hagane, 81(6), 1995, pp. 607-612
Citation: Y. Waseda et al., THEORETICAL ESTIMATION OF THE EFFECT OF MINOR ELEMENTS ON THE SOLUBILITY OF OXYGEN IN SILICON MELT, Journal of crystal growth, 139(3-4), 1994, pp. 357-362
Authors:
NARUSHIMA T
GOTO T
YOKOYAMA Y
HAGIWARA J
IGUCHI Y
HIRAI T
Citation: T. Narushima et al., HIGH-TEMPERATURE ACTIVE OXIDATION AND ACTIVE-TO-PASSIVE TRANSITION OFCHEMICALLY VAPOR-DEPOSITED SILICON-NITRIDE IN N-2 O-2 AND AR O-2 ATMOSPHERES, Journal of the American Ceramic Society, 77(9), 1994, pp. 2369-2375
Authors:
NARUSHIMA T
GOTO T
YOKOYAMA Y
TAKEUCHI M
IGUCHI Y
HIRAI T
Citation: T. Narushima et al., ACTIVE-TO-PASSIVE TRANSITION AND BUBBLE FORMATION FOR HIGH-TEMPERATURE OXIDATION OF CHEMICALLY VAPOR-DEPOSITED SILICON-CARBIDE IN CO-CO2 ATMOSPHERE, Journal of the American Ceramic Society, 77(4), 1994, pp. 1079-1082
Authors:
NARUSHIMA T
GOTO T
HAGIWARA J
IGUCHI Y
HIRAI T
Citation: T. Narushima et al., HIGH-TEMPERATURE OXIDATION OF CHEMICALLY VAPOR-DEPOSITED SILICON-NITRIDE IN A CARBON-MONOXIDE CARBON-DIOXIDE ATMOSPHERE, Journal of the American Ceramic Society, 77(11), 1994, pp. 2921-2925
Citation: T. Narushima et al., OXIDATION OF CHEMICALLY VAPOR-DEPOSITED SILICON-NITRIDE IN DRY OXYGENAT 1923-K TO 2003-K, Journal of the American Ceramic Society, 76(4), 1993, pp. 1047-1051
Authors:
NARUSHIMA T
GOTO T
YOKOYAMA Y
IGUCHI Y
HIRAI T
Citation: T. Narushima et al., HIGH-TEMPERATURE ACTIVE OXIDATION OF CHEMICALLY VAPOR-DEPOSITED SILICON-CARBIDE IN CO-CO2 ATMOSPHERE, Journal of the American Ceramic Society, 76(10), 1993, pp. 2521-2524