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Results: 1-18 |
Results: 18
EFFECT OF ALLOYING ELEMENTS ON CARBON SOLUBILITY IN LIQUID SILICON EQUILIBRATED WITH SILICON-CARBIDE
Authors: YANABA K MATSUMURA Y NARUSHIMA T IGUCHI Y
Citation: K. Yanaba et al., EFFECT OF ALLOYING ELEMENTS ON CARBON SOLUBILITY IN LIQUID SILICON EQUILIBRATED WITH SILICON-CARBIDE, Materials transactions, JIM, 39(8), 1998, pp. 819-823
SYNTHESIS AND ELECTRICAL PROPERTY MEASUREMENTS OF BA BETA-ALUMINA IN A BAO-MGO-AL2O3 SYSTEM
Authors: HE G NARUSHIMA T GOTO T HIRAI T IGUCHI Y
Citation: G. He et al., SYNTHESIS AND ELECTRICAL PROPERTY MEASUREMENTS OF BA BETA-ALUMINA IN A BAO-MGO-AL2O3 SYSTEM, Nippon Seramikkusu Kyokai gakujutsu ronbunshi, 106(11), 1998, pp. 1048-1050
SOLUBILITY OF CARBON IN LIQUID SILICON EQUILIBRATED WITH SILICON-CARBIDE
Authors: YANABA K AKASAKA M TAKEUCHI M WATANABE M NARUSHIMA T IGUCHI Y
Citation: K. Yanaba et al., SOLUBILITY OF CARBON IN LIQUID SILICON EQUILIBRATED WITH SILICON-CARBIDE, Materials transactions, JIM, 38(11), 1997, pp. 990-994
HIGH-TEMPERATURE OXIDATION OF SILICON-CARBIDE AND SILICON-NITRIDE
Authors: NARUSHIMA T GOTO T HIRAI T IGUCHI Y
Citation: T. Narushima et al., HIGH-TEMPERATURE OXIDATION OF SILICON-CARBIDE AND SILICON-NITRIDE, Materials transactions, JIM, 38(10), 1997, pp. 821-835
PREPARATION OF SR BETA-ALUMINA IONIC CONDUCTORS AND THEIR AC-IMPEDANCE MEASUREMENTS
Authors: GANG H HAYASAKA Y NARUSHIMA T GOTO T HIRAI T IGUCHI Y
Citation: H. Gang et al., PREPARATION OF SR BETA-ALUMINA IONIC CONDUCTORS AND THEIR AC-IMPEDANCE MEASUREMENTS, Nippon Seramikkusu Kyokai gakujutsu ronbunshi, 105(12), 1997, pp. 1067-1071
OXYGEN SOLUBILITY IN LIQUID SI-X (X=SB, B, P AND AS) ALLOYS
Authors: NARUSHIMA T MATSUZAWA K MAMIYA M IGUCHI Y
Citation: T. Narushima et al., OXYGEN SOLUBILITY IN LIQUID SI-X (X=SB, B, P AND AS) ALLOYS, Materials transactions, JIM, 36(6), 1995, pp. 763-769
NUMERICAL STUDY ON THE GROUND-STATE PHASE-DIAGRAM OF THE S=1 2 XXZ LADDER MODEL/
Authors: NARUSHIMA T NAKAMURA T TAKADA S
Citation: T. Narushima et al., NUMERICAL STUDY ON THE GROUND-STATE PHASE-DIAGRAM OF THE S=1 2 XXZ LADDER MODEL/, Journal of the Physical Society of Japan, 64(11), 1995, pp. 4322-4330
OXYGEN SOLUBILITY IN LIQUID GALLIUM AND L IQUID INDIUM
Authors: NARUSHIMA T SAJUTI D SAEKI K YOSHIDA SY IGUCHI Y
Citation: T. Narushima et al., OXYGEN SOLUBILITY IN LIQUID GALLIUM AND L IQUID INDIUM, Nippon Kinzoku Gakkaishi, 59(1), 1995, pp. 37-43
DEVELOPMENT OF IN-SITU OBSERVATION SYSTEM FOR OXIDE-FILMS FORMED DURING THERMAL-OXIDATION USING RAMAN-SPECTROSCOPY
Authors: NARUSHIMA T KIKUCHI N MARUYAMA M ARASHI H NISHINA Y IGUCHI Y
Citation: T. Narushima et al., DEVELOPMENT OF IN-SITU OBSERVATION SYSTEM FOR OXIDE-FILMS FORMED DURING THERMAL-OXIDATION USING RAMAN-SPECTROSCOPY, Tetsu to hagane, 81(6), 1995, pp. 607-612
OXYGEN SOLUBILITY IN LIQUID SILICON
Authors: NARUSHIMA T MATSUZAWA K MUKAI Y IGUCHI Y
Citation: T. Narushima et al., OXYGEN SOLUBILITY IN LIQUID SILICON, Materials transactions, JIM, 35(8), 1994, pp. 522-528
NITROGEN SOLUBILITY IN LIQUID SILICON
Authors: NARUSHIMA T UEDA N TAKEUCHI M ISHII F IGUCHI Y
Citation: T. Narushima et al., NITROGEN SOLUBILITY IN LIQUID SILICON, Materials transactions, JIM, 35(11), 1994, pp. 821-826
THEORETICAL ESTIMATION OF THE EFFECT OF MINOR ELEMENTS ON THE SOLUBILITY OF OXYGEN IN SILICON MELT
Authors: WASEDA Y JACOB KT IGUCHI Y NARUSHIMA T
Citation: Y. Waseda et al., THEORETICAL ESTIMATION OF THE EFFECT OF MINOR ELEMENTS ON THE SOLUBILITY OF OXYGEN IN SILICON MELT, Journal of crystal growth, 139(3-4), 1994, pp. 357-362
HIGH-TEMPERATURE ACTIVE OXIDATION AND ACTIVE-TO-PASSIVE TRANSITION OFCHEMICALLY VAPOR-DEPOSITED SILICON-NITRIDE IN N-2 O-2 AND AR O-2 ATMOSPHERES
Authors: NARUSHIMA T GOTO T YOKOYAMA Y HAGIWARA J IGUCHI Y HIRAI T
Citation: T. Narushima et al., HIGH-TEMPERATURE ACTIVE OXIDATION AND ACTIVE-TO-PASSIVE TRANSITION OFCHEMICALLY VAPOR-DEPOSITED SILICON-NITRIDE IN N-2 O-2 AND AR O-2 ATMOSPHERES, Journal of the American Ceramic Society, 77(9), 1994, pp. 2369-2375
ACTIVE-TO-PASSIVE TRANSITION AND BUBBLE FORMATION FOR HIGH-TEMPERATURE OXIDATION OF CHEMICALLY VAPOR-DEPOSITED SILICON-CARBIDE IN CO-CO2 ATMOSPHERE
Authors: NARUSHIMA T GOTO T YOKOYAMA Y TAKEUCHI M IGUCHI Y HIRAI T
Citation: T. Narushima et al., ACTIVE-TO-PASSIVE TRANSITION AND BUBBLE FORMATION FOR HIGH-TEMPERATURE OXIDATION OF CHEMICALLY VAPOR-DEPOSITED SILICON-CARBIDE IN CO-CO2 ATMOSPHERE, Journal of the American Ceramic Society, 77(4), 1994, pp. 1079-1082
HIGH-TEMPERATURE OXIDATION OF CHEMICALLY VAPOR-DEPOSITED SILICON-NITRIDE IN A CARBON-MONOXIDE CARBON-DIOXIDE ATMOSPHERE
Authors: NARUSHIMA T GOTO T HAGIWARA J IGUCHI Y HIRAI T
Citation: T. Narushima et al., HIGH-TEMPERATURE OXIDATION OF CHEMICALLY VAPOR-DEPOSITED SILICON-NITRIDE IN A CARBON-MONOXIDE CARBON-DIOXIDE ATMOSPHERE, Journal of the American Ceramic Society, 77(11), 1994, pp. 2921-2925
PHASE-DIAGRAMS OF THE GA2O3-B2O3 AND IN2O3-B2O3 BINARY-SYSTEMS
Authors: SAJUTI D YANO M NARUSHIMA T IGUCHI Y
Citation: D. Sajuti et al., PHASE-DIAGRAMS OF THE GA2O3-B2O3 AND IN2O3-B2O3 BINARY-SYSTEMS, Materials transactions, JIM, 34(12), 1993, pp. 1195-1199
OXIDATION OF CHEMICALLY VAPOR-DEPOSITED SILICON-NITRIDE IN DRY OXYGENAT 1923-K TO 2003-K
Authors: NARUSHIMA T LIN RY IGUCHI Y HIRAI T
Citation: T. Narushima et al., OXIDATION OF CHEMICALLY VAPOR-DEPOSITED SILICON-NITRIDE IN DRY OXYGENAT 1923-K TO 2003-K, Journal of the American Ceramic Society, 76(4), 1993, pp. 1047-1051
HIGH-TEMPERATURE ACTIVE OXIDATION OF CHEMICALLY VAPOR-DEPOSITED SILICON-CARBIDE IN CO-CO2 ATMOSPHERE
Authors: NARUSHIMA T GOTO T YOKOYAMA Y IGUCHI Y HIRAI T
Citation: T. Narushima et al., HIGH-TEMPERATURE ACTIVE OXIDATION OF CHEMICALLY VAPOR-DEPOSITED SILICON-CARBIDE IN CO-CO2 ATMOSPHERE, Journal of the American Ceramic Society, 76(10), 1993, pp. 2521-2524
Risultati: 1-18 |