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Results:
1-7
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Results: 7
Authors:
HUANG JP
WANG LW
SHEN QW
GAO JX
NI RS
LIN CL
Citation: Jp. Huang et al., C-AXIS ORIENTED ALN THIN-FILMS ON SILICON PREPARED BY ULTRAHIGH-VACUUM EVAPORATION OF AL COMBINED WITH POSTNITRIDATION, Chinese Physics Letters, 15(10), 1998, pp. 732-733
Authors:
NI RS
WANG LW
SHEN QW
LIN CG
Citation: Rs. Ni et al., STRUCTURAL CHARACTERIZATION OF BETA-FESI2 FILMS ON SI(100) PREPARED BY REACTIVE DEPOSITION SOLID-PHASE EPITAXY, Journal of trace and microprobe techniques, 15(4), 1997, pp. 541-545
Authors:
ZHANG M
ZHU SY
LI JH
NI RS
LIN CL
Citation: M. Zhang et al., UNIBOND SYNTHESIS OF SILICON-ON-INSULATOR MATERIAL, Chinese Physics Letters, 14(1), 1997, pp. 55-58
Authors:
CHEN XD
WANG LW
SHEN QW
NI RS
LIN CL
Citation: Xd. Chen et al., CHARACTERIZATION OF FESIX FILM BY CODEPOSITION ON BETA-FESI2 TEMPLATE, Applied physics letters, 68(20), 1996, pp. 2858-2860
Authors:
WANG LW
LIN CL
SHEN QW
NI RS
ZOU SC
Citation: Lw. Wang et al., REACTIVE DEPOSITION EPITAXIAL-GROWTH OF BETA-FESI2 FILM ON SI(001) - IN-SITU OBSERVATION BY REFLECTIVE HIGH-ENERGY ELECTRON DIFFRACTION, Chinese Physics Letters, 12(10), 1995, pp. 613-616
Authors:
WANG LW
LIN CG
SHEN QW
LIN X
NI RS
ZOU SC
Citation: Lw. Wang et al., REACTIVE DEPOSITION EPITAXIAL-GROWTH OF BETA-FESI2 FILM ON SI(111) - IN-SITU OBSERVATION BY REFLECTIVE HIGH-ENERGY ELECTRON-DIFFRACTION, Applied physics letters, 66(25), 1995, pp. 3453-3455
Authors:
LIU P
LI BZ
SUN Z
GU ZG
HUANG WN
ZHOU ZY
NI RS
LIN CL
ZOU SC
HONG F
ROZGONYI GA
Citation: P. Liu et al., EPITAXIAL-GROWTH OF COSI2 ON BOTH (111) SI AND (100) SI SUBSTRATES BYMULTISTEP ANNEALING OF A TERNARY CO TI/SI SYSTEM/, Journal of applied physics, 74(3), 1993, pp. 1700-1706
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