AAAAAA

   
Results: 1-18 |
Results: 18
TRANSIENT AND STATIONARY FIELD-EMISSION CURRENTS FROM SEMICONDUCTORS COMPUTED BY A SIMPLE SEMICLASSICAL METHOD
Authors: FILIP V NICOLAESCU D PLAVITU CN OKUYAMA F
Citation: V. Filip et al., TRANSIENT AND STATIONARY FIELD-EMISSION CURRENTS FROM SEMICONDUCTORS COMPUTED BY A SIMPLE SEMICLASSICAL METHOD, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(2), 1998, pp. 888-894
PROPOSAL FOR A NEW UV-LIGHT GENERATING DEVICE BASED ON COLD ELECTRON-EMISSION
Authors: NICOLAESCU D FILIP V OKUYAMA F
Citation: D. Nicolaescu et al., PROPOSAL FOR A NEW UV-LIGHT GENERATING DEVICE BASED ON COLD ELECTRON-EMISSION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(5), 1998, pp. 2885-2889
STUDY OF THE INVERTED-MAGNETRON COLD EMISSION MICROELECTRONIC VACUUM GAUGE
Authors: NICOLAESCU D FILIP V OKUYAMA F
Citation: D. Nicolaescu et al., STUDY OF THE INVERTED-MAGNETRON COLD EMISSION MICROELECTRONIC VACUUM GAUGE, Ultramicroscopy, 73(1-4), 1998, pp. 129-137
INVESTIGATION OF POROUS SILICON MORPHOLOGY FOR ELECTRON-EMISSION APPLICATIONS
Authors: KLEPS I NICOLAESCU D GARCIA N SERENA P GIL A ZLATKIN A
Citation: I. Kleps et al., INVESTIGATION OF POROUS SILICON MORPHOLOGY FOR ELECTRON-EMISSION APPLICATIONS, Ultramicroscopy, 73(1-4), 1998, pp. 237-245
A CONCEPTUAL DESIGN FOR A MICROELECTRONIC IONIZATION VACUUM GAUGE
Authors: NICOLAESCU D FILIP V OKUYAMA F
Citation: D. Nicolaescu et al., A CONCEPTUAL DESIGN FOR A MICROELECTRONIC IONIZATION VACUUM GAUGE, Applied surface science, 126(3-4), 1998, pp. 292-302
PROPOSAL FOR A NEW SELF-FOCUSING CONFIGURATION INVOLVING POROUS SILICON FOR FIELD-EMISSION FLAT-PANEL DISPLAYS
Authors: NICOLAESCU D FILIP V OKUYAMA F
Citation: D. Nicolaescu et al., PROPOSAL FOR A NEW SELF-FOCUSING CONFIGURATION INVOLVING POROUS SILICON FOR FIELD-EMISSION FLAT-PANEL DISPLAYS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(4), 1997, pp. 2369-2374
ANALYSIS OF MICROWAVE GENERATION BY FIELD EMITTED ELECTRONS MOVING INCROSSED ELECTRIC AND MAGNETIC-FIELDS
Authors: FILIP V NICOLAESCU D PLAVITU CN OKUYAMA F
Citation: V. Filip et al., ANALYSIS OF MICROWAVE GENERATION BY FIELD EMITTED ELECTRONS MOVING INCROSSED ELECTRIC AND MAGNETIC-FIELDS, Applied surface science, 111, 1997, pp. 185-193
POROUS SILICON FIELD EMITTERS FOR DISPLAY APPLICATIONS
Authors: KLEPS I NICOLAESCU D LUNGU C MUSA G BOSTAN C CACCAVALE F
Citation: I. Kleps et al., POROUS SILICON FIELD EMITTERS FOR DISPLAY APPLICATIONS, Applied surface science, 111, 1997, pp. 228-232
ANALYSIS OF A PRESSURE SENSOR-BASED ON AN ARRAY OF COLLECTOR-ASSISTEDFIELD-EMISSION TRIODES
Authors: NICOLAESCU D FILIP V OKUYAMA F
Citation: D. Nicolaescu et al., ANALYSIS OF A PRESSURE SENSOR-BASED ON AN ARRAY OF COLLECTOR-ASSISTEDFIELD-EMISSION TRIODES, Review of scientific instruments, 68(12), 1997, pp. 4615-4620
SPATIAL-DISTRIBUTION OF THE ELECTRIC-FIELD FOR FIELD-EMISSION MICROTRIODES
Authors: NICOLAESCU D
Citation: D. Nicolaescu, SPATIAL-DISTRIBUTION OF THE ELECTRIC-FIELD FOR FIELD-EMISSION MICROTRIODES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 1930-1933
MODELING OF THE FIELD-EMISSION MICROTRIODE WITH EMITTER COVERED WITH POROUS SILICON
Authors: NICOLAESCU D FILIP V WILSHAW PR
Citation: D. Nicolaescu et al., MODELING OF THE FIELD-EMISSION MICROTRIODE WITH EMITTER COVERED WITH POROUS SILICON, Applied surface science, 94-5, 1996, pp. 79-86
MODELING OF A MAGNETIC SENSOR-BASED ON VACUUM FIELD-EMISSION
Authors: NICOLAESCU D FILIP V
Citation: D. Nicolaescu et V. Filip, MODELING OF A MAGNETIC SENSOR-BASED ON VACUUM FIELD-EMISSION, Applied surface science, 94-5, 1996, pp. 87-93
ELECTRIC FIELD-POTENTIAL CORRELATION FACTORS FOR FIELD-EMISSION MICROTRIODES
Authors: NICOLAESCU D
Citation: D. Nicolaescu, ELECTRIC FIELD-POTENTIAL CORRELATION FACTORS FOR FIELD-EMISSION MICROTRIODES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(2), 1995, pp. 531-535
MODELING OF THE FIELD EMITTER TRIODE (FET) AS A DISPLACEMENT PRESSURESENSOR
Authors: NICOLAESCU D
Citation: D. Nicolaescu, MODELING OF THE FIELD EMITTER TRIODE (FET) AS A DISPLACEMENT PRESSURESENSOR, Applied surface science, 87-8(1-4), 1995, pp. 61-68
FIELD-EMISSION DIODE CHARACTERIZATION THROUGH MODEL PARAMETERS EXTRACTION FROM CURRENT-VOLTAGE EXPERIMENTAL-DATA
Authors: NICOLAESCU D AVRAMESCU V
Citation: D. Nicolaescu et V. Avramescu, FIELD-EMISSION DIODE CHARACTERIZATION THROUGH MODEL PARAMETERS EXTRACTION FROM CURRENT-VOLTAGE EXPERIMENTAL-DATA, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(2), 1994, pp. 749-753
TECHNOLOGICAL PARAMETERS DISTRIBUTION EFFECTS ON THE CURRENT-VOLTAGE CHARACTERISTICS OF FIELD EMITTER ARRAYS
Authors: NICOLAESCU D
Citation: D. Nicolaescu, TECHNOLOGICAL PARAMETERS DISTRIBUTION EFFECTS ON THE CURRENT-VOLTAGE CHARACTERISTICS OF FIELD EMITTER ARRAYS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(2), 1994, pp. 759-763
CONE-GATED AND WEDGE-GATED FIELD EMITTER DIODE AND MICROTRIODE MODELING
Authors: NICOLAESCU D
Citation: D. Nicolaescu, CONE-GATED AND WEDGE-GATED FIELD EMITTER DIODE AND MICROTRIODE MODELING, Applied surface science, 76(1-4), 1994, pp. 47-57
PHYSICAL BASIS FOR APPLYING THE FOWLER-NORDHEIM J-E RELATIONSHIP TO EXPERIMENTAL IV DATA
Authors: NICOLAESCU D
Citation: D. Nicolaescu, PHYSICAL BASIS FOR APPLYING THE FOWLER-NORDHEIM J-E RELATIONSHIP TO EXPERIMENTAL IV DATA, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(2), 1993, pp. 392-395
Risultati: 1-18 |