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Results: 1-11 |
Results: 11
MINIATURIZED FRONT-END HIC USING MBB TECHNOLOGY FOR MOBILE COMMUNICATION EQUIPMENT
Authors: ITOH J NAKATSUKA T YOSHIDA T NISHITSUJI M UDA T ISHIKAWA O
Citation: J. Itoh et al., MINIATURIZED FRONT-END HIC USING MBB TECHNOLOGY FOR MOBILE COMMUNICATION EQUIPMENT, IEICE transactions on electronics, E81C(6), 1998, pp. 834-840
A HIGHLY MINIATURIZED FRONT-END HIC FOR 1.9 GHZ BANDS
Authors: NAKATSUKA T ITOH J YOSHIDA T NISHITSUJI M UDA T ISHIKAWA O
Citation: T. Nakatsuka et al., A HIGHLY MINIATURIZED FRONT-END HIC FOR 1.9 GHZ BANDS, IEEE journal of solid-state circuits, 33(9), 1998, pp. 1284-1289
LOW-VOLTAGE OPERATION GAAS RECEIVER FRONT-END IC
Authors: ITOH J NAKATSUKA T NISHITSUJI M UDA T ISHIKAWA O
Citation: J. Itoh et al., LOW-VOLTAGE OPERATION GAAS RECEIVER FRONT-END IC, IEICE transactions on electronics, E80C(12), 1997, pp. 1592-1597
SELF-ALIGNED EMITTER POWER HBT AND SELF-ALIGNED GATE POWER HFET FOR LOW UNITY SUPPLY VOLTAGE OPERATION IN PHS HANDSETS/
Authors: OTA Y YAMAMOTO S YOKOYAMA T MASATO H NISHITSUJI M YANAGIHARA M INOUE K
Citation: Y. Ota et al., SELF-ALIGNED EMITTER POWER HBT AND SELF-ALIGNED GATE POWER HFET FOR LOW UNITY SUPPLY VOLTAGE OPERATION IN PHS HANDSETS/, Solid-state electronics, 41(10), 1997, pp. 1675-1679
LOW-TEMPERATURE FABRICATION OF HIGH DIELECTRIC-CONSTANT THIN-FILM CAPACITOR ON GAAS-MMIC
Authors: KITAGAWA M SHIBUYA M NISHITSUJI M TAMURA A
Citation: M. Kitagawa et al., LOW-TEMPERATURE FABRICATION OF HIGH DIELECTRIC-CONSTANT THIN-FILM CAPACITOR ON GAAS-MMIC, Journal of the Korean Physical Society, 29, 1996, pp. 582-586
LONG-TERM PROBUCOL TREATMENT RESULTS IN REGRESSION OF XANTHOMAS, BUT IN PROGRESSION OF CORONARY ATHEROSCLEROSIS IN A HETEROZYGOUS PATIENT WITH FAMILIAL HYPERCHOLESTEROLEMIA
Authors: KAJINAMI K NISHITSUJI M TAKEDA Y SHIMIZU M KOIZUMI J MABUCHI H
Citation: K. Kajinami et al., LONG-TERM PROBUCOL TREATMENT RESULTS IN REGRESSION OF XANTHOMAS, BUT IN PROGRESSION OF CORONARY ATHEROSCLEROSIS IN A HETEROZYGOUS PATIENT WITH FAMILIAL HYPERCHOLESTEROLEMIA, Atherosclerosis, 120(1-2), 1996, pp. 181-187
SUB-QUARTER-MICROMETER GAAS-MESFET PROCESS WITH WSI SIDEWALL GATE
Authors: UDA T NISHITSUJI M NISHII K FUJIMOTO K TAMURA A
Citation: T. Uda et al., SUB-QUARTER-MICROMETER GAAS-MESFET PROCESS WITH WSI SIDEWALL GATE, Electronics Letters, 32(11), 1996, pp. 1038-1039
A NEW GAAS MMIC PROCESS TECHNOLOGY USING 0.5-MU-M GATE ASYMMETRIC LDDSTRUCTURE GAAS BP-MESFETS COMBINED WITH HIGH-DIELECTRIC-CONSTANT THIN-FILM CAPACITORS
Authors: NISHITSUJI M UDA T YOKOYAMA T FUJIMOTO K NISHII K SHIBUYA M KITAGAWA M TAMURA A
Citation: M. Nishitsuji et al., A NEW GAAS MMIC PROCESS TECHNOLOGY USING 0.5-MU-M GATE ASYMMETRIC LDDSTRUCTURE GAAS BP-MESFETS COMBINED WITH HIGH-DIELECTRIC-CONSTANT THIN-FILM CAPACITORS, Semiconductor science and technology, 10(11), 1995, pp. 1534-1540
NEW GAAS-MMIC PROCESS TECHNOLOGY USING LOW-TEMPERATURE DEPOSITED SRTIO3 THIN-FILM CAPACITORS
Authors: NISHITSUJI M TAMURA A YAHATA K SHIBUYA M KITAGAWA M HIRAO T
Citation: M. Nishitsuji et al., NEW GAAS-MMIC PROCESS TECHNOLOGY USING LOW-TEMPERATURE DEPOSITED SRTIO3 THIN-FILM CAPACITORS, Electronics Letters, 30(13), 1994, pp. 1045-1046
SUBSTRATE POTENTIAL EFFECTS ON LOW-TEMPERATURE PREPARATION OF SRTIO3THIN FILMS BY RF MAGNETRON SPUTTERING
Authors: SHIBUYA M NISHITSUJI M KITAGAWA M KAMADA T HAYASHI S TAMURA A HIRAO T
Citation: M. Shibuya et al., SUBSTRATE POTENTIAL EFFECTS ON LOW-TEMPERATURE PREPARATION OF SRTIO3THIN FILMS BY RF MAGNETRON SPUTTERING, JPN J A P 2, 32(12B), 1993, pp. 120001830-120001833
RAPID THERMAL ANNEALING OF SI-IMPLANTED GAAS USING THE GA-DOPED SPIN-ON GLASS-FILMS
Authors: NISHITSUJI M TAMURA A
Citation: M. Nishitsuji et A. Tamura, RAPID THERMAL ANNEALING OF SI-IMPLANTED GAAS USING THE GA-DOPED SPIN-ON GLASS-FILMS, Applied physics letters, 63(10), 1993, pp. 1384-1386
Risultati: 1-11 |