AAAAAA
Results: 26-40/40
Authors:
HASEGAWA S
NITTA S
NONOMURA S
Citation: S. Hasegawa et al., ULTRA-LOW FREQUENCY CPM OF A-SI-H AND RELAXATION, Journal of non-crystalline solids, 200, 1996, pp. 544-547
Authors:
HASEGAWA S
NISHIWAKI T
HABUCHI H
NITTA S
NONOMURA S
Citation: S. Hasegawa et al., OPTICAL-ENERGY GAP AND BELOW GAP OPTICAL-ABSORPTION OF FULLERENE FILMS MEASURED BY THE CONSTANT PHOTOCURRENT METHOD AND PHOTOTHERMAL DEFLECTION SPECTROSCOPY, Fullerene science and technology, 3(3), 1995, pp. 313-325
Authors:
HASEGAWA S
NISHIWAKI T
HABUCHI H
NITTA S
NONOMURA S
Citation: S. Hasegawa et al., OPTICAL-ENERGY GAP AND BELOW GAP OPTICAL-ABSORPTION OF FULLERENE FILMS MEASURED BY CONSTANT PHOTOCURRENT METHOD AND PHOTOTHERMAL DEFLECTIONSPECTROSCOPY, Fullerene science and technology, 3(2), 1995, pp. 163-178
Authors:
MASAKI Y
NONOMURA S
KUROKAWA T
SAKIMOTO T
KAWAI H
GIBSON RAG
JONES DI
Citation: Y. Masaki et al., INTERACTION IN THE CR AMORPHOUS-SILICON SYSTEM/, Journal of applied physics, 77(6), 1995, pp. 2474-2478
Authors:
ITOH T
HABUCHI H
NITTA S
NONOMURA S
Citation: T. Itoh et al., GAS EFFUSION SPECTRA OF FULLERENES, Fullerene science and technology, 2(2), 1994, pp. 181-187
Authors:
LONG AR
CHAHDI M
RODLEY DG
NONOMURA S
LECOMBER PG
Citation: Ar. Long et al., POTENTIAL DISTRIBUTION AND INTERFACE STATES IN THE INPUT STAGE OF AN AMORPHOUS-SILICON THIN-FILM-TRANSISTOR, Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties, 69(2), 1994, pp. 223-236
Authors:
NONOMURA S
NISHIWAKI T
NITTA S
Citation: S. Nonomura et al., PHOTOTHERMAL DEFLECTION SPECTROSCOPY OF HYDROGENATED AMORPHOUS-SILICON AT LOW ENERGIES AND AT LOW-TEMPERATURES, Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties, 69(2), 1994, pp. 335-348
Authors:
TAKEUCHI S
HIROSE H
NITTA S
ITOH T
NONOMURA S
Citation: S. Takeuchi et al., OPTICAL-PROPERTIES OF RANDOM AMORPHOUS MULTILAYERS A-SI-H A-SI3N4-H(X), Solar energy materials and solar cells, 34(1-4), 1994, pp. 439-447
Authors:
NONOMURA S
NISHIWAKI T
NISHIMURA E
HASEGAWA S
ITOH T
NITTA S
Citation: S. Nonomura et al., CHARACTERIZATION OF HIGH-QUALITY A-SI-H FOR SOLAR-CELLS AT LOW-ENERGYAND AT LOW-TEMPERATURE BY PDS, Solar energy materials and solar cells, 34(1-4), 1994, pp. 549-555
Authors:
NITTA S
HIROSE H
TAKEUCHI S
ITOH T
NONOMURA S
Citation: S. Nitta et al., OPTICAL-PROPERTIES OF RANDOM AMORPHOUS-SEMICONDUCTOR MULTILAYERS, Optoelectronics, 9(3), 1994, pp. 355-366
Authors:
NITTA S
HIROSE H
TAKEUCHI S
NONOMURA S
Citation: S. Nitta et al., ANOMALOUS OPTICAL-PROPERTIES OF AMORPHOUS RANDOM MULTILAYERS AND ITS RELATION WITH THE CLASSICAL LOCALIZATION OF OPTICAL PROPAGATION, Superlattices and microstructures, 15(4), 1994, pp. 483-487
Authors:
LONG AR
CHAHDI M
RODLEY DG
NONOMURA S
LECOMBER PG
Citation: Ar. Long et al., CAPACITANCE STUDIES OF THE A-SI TFT INPUT STAGE, Journal of non-crystalline solids, 166, 1993, pp. 767-770
Authors:
MASAKI Y
NONOMURA S
GIBSON RAG
SAKIMOTO T
KUROKAWA T
KAWAI H
Citation: Y. Masaki et al., AMORPHOUS SILICIDE FORMATION IN THE CR AMORPHOUS SILICON SYSTEM/, Journal of non-crystalline solids, 166, 1993, pp. 857-860
Authors:
NITTA S
NISHIMURA E
MINAMIDE T
UCHIDA T
NONOMURA S
Citation: S. Nitta et al., STUDIES OF OPTICAL-ABSORPTION COEFFICIENTS-ALPHA OF A-SI-H BY PHOTOLUMINESCENCE ABSORPTION-SPECTROSCOPY, Journal of non-crystalline solids, 166, 1993, pp. 913-916
Authors:
NONOMURA S
NISHIWAKI T
KUSAKABE S
NISHIMURA E
ITOH T
NITTA S
Citation: S. Nonomura et al., OPTICAL-ABSORPTION OF HIGH-QUALITY A-SI-H AND A-SIXN1-X-H IN THE LOW-ENERGY REGION 0.43 EV APPROXIMATE-TO-1.5 EV BY PDS, Journal of non-crystalline solids, 166, 1993, pp. 359-362