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Results: 1-20 |
Results: 20
BORON IMPLANTATION AND EPITAXIAL REGROWTH STUDIES OF 6H SIC
Authors: NORDELL N SCHONER A ROTTNER K PERSSON POA WAHAB Q HULTMAN L LINNARSSON MK OLSSON E
Citation: N. Nordell et al., BORON IMPLANTATION AND EPITAXIAL REGROWTH STUDIES OF 6H SIC, Journal of electronic materials, 27(7), 1998, pp. 833-837
STUDY OF AVALANCHE BREAKDOWN AND IMPACT IONIZATION IN 4H SILICON-CARBIDE
Authors: KONSTANTINOV AO WAHAB Q NORDELL N LINDEFELT U
Citation: Ao. Konstantinov et al., STUDY OF AVALANCHE BREAKDOWN AND IMPACT IONIZATION IN 4H SILICON-CARBIDE, Journal of electronic materials, 27(4), 1998, pp. 335-341
ELECTRICALLY ACTIVE POINT-DEFECTS IN N-TYPE 4H-SIC
Authors: DOYLE JP LINNARSSON MK PELLEGRINO P KESKITALO N SVENSSON BG SCHONER A NORDELL N LINDSTROM JL
Citation: Jp. Doyle et al., ELECTRICALLY ACTIVE POINT-DEFECTS IN N-TYPE 4H-SIC, Journal of applied physics, 84(3), 1998, pp. 1354-1357
OBSERVATION OF NEAR-SURFACE ELECTRICALLY ACTIVE DEFECTS IN N-TYPE 6H-SIC
Authors: DOYLE JP SCHONER A NORDELL N GALECKAS A BLEICHNER H LINNARSSON MK LINNROS J SVENSSON BG
Citation: Jp. Doyle et al., OBSERVATION OF NEAR-SURFACE ELECTRICALLY ACTIVE DEFECTS IN N-TYPE 6H-SIC, Journal of applied physics, 83(7), 1998, pp. 3649-3651
TEMPERATURE-DEPENDENCE OF AVALANCHE BREAKDOWN FOR EPITAXIAL DIODES IN4H SILICON-CARBIDE
Authors: KONSTANTINOV AO NORDELL N WAHAB Q LINDEFELT U
Citation: Ao. Konstantinov et al., TEMPERATURE-DEPENDENCE OF AVALANCHE BREAKDOWN FOR EPITAXIAL DIODES IN4H SILICON-CARBIDE, Applied physics letters, 73(13), 1998, pp. 1850-1852
HOMOEPITAXY 6H AND 4H SIC ON NONPLANAR SUBSTRATES
Authors: NORDELL N KARLSSON S KONSTANTINOV AO
Citation: N. Nordell et al., HOMOEPITAXY 6H AND 4H SIC ON NONPLANAR SUBSTRATES, Applied physics letters, 72(2), 1998, pp. 197-199
HYDROGEN INCORPORATION IN EPITAXIAL LAYERS OF 4H-SILICON-CARBIDE AND 6H-SILICON-CARBIDE GROWN BY VAPOR-PHASE EPITAXY
Authors: SCHONER A ROTTNER K NORDELL N LINNARSSON M PEPPERMULLER C HELBIG R
Citation: A. Schoner et al., HYDROGEN INCORPORATION IN EPITAXIAL LAYERS OF 4H-SILICON-CARBIDE AND 6H-SILICON-CARBIDE GROWN BY VAPOR-PHASE EPITAXY, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1293-1296
CHARACTERIZATION OF ELECTRICALLY ACTIVE DEEP-LEVEL DEFECTS IN 4H AND 6H SIC
Authors: DOYLE JP ABOELFOTOH MO SVENSSON BG SCHONER A NORDELL N
Citation: Jp. Doyle et al., CHARACTERIZATION OF ELECTRICALLY ACTIVE DEEP-LEVEL DEFECTS IN 4H AND 6H SIC, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1388-1391
CAPACITANCE TRANSIENT STUDIES OF ELECTRON-IRRADIATED 4H-SIC
Authors: HEMMINGSSON C SON NT KORDINA O JANZEN E LINDSTROM JL SAVAGE S NORDELL N
Citation: C. Hemmingsson et al., CAPACITANCE TRANSIENT STUDIES OF ELECTRON-IRRADIATED 4H-SIC, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 336-339
HIGH-VOLTAGE OPERATION OF FIELD-EFFECT TRANSISTORS IN SILICON-CARBIDE
Authors: KONSTANTINOV AO IVANOV PA NORDELL N KARLSSON S HARRIS CI
Citation: Ao. Konstantinov et al., HIGH-VOLTAGE OPERATION OF FIELD-EFFECT TRANSISTORS IN SILICON-CARBIDE, IEEE electron device letters, 18(11), 1997, pp. 521-522
CONTROL OF AL-DOPING AND B-DOPING TRANSIENTS IN 6H AND 4H SIC GROWN BY VAPOR-PHASE EPITAXY
Authors: NORDELL N SCHONER A LINNARSSON MK
Citation: N. Nordell et al., CONTROL OF AL-DOPING AND B-DOPING TRANSIENTS IN 6H AND 4H SIC GROWN BY VAPOR-PHASE EPITAXY, Journal of electronic materials, 26(3), 1997, pp. 187-192
ELECTRICAL-PROPERTIES OF THE TITANIUM ACCEPTOR IN SILICON-CARBIDE
Authors: DALIBOR T PENSL G NORDELL N SCHONER A
Citation: T. Dalibor et al., ELECTRICAL-PROPERTIES OF THE TITANIUM ACCEPTOR IN SILICON-CARBIDE, Physical review. B, Condensed matter, 55(20), 1997, pp. 13618-13624
DEEP DEFECT CENTERS IN SILICON-CARBIDE MONITORED WITH DEEP-LEVEL TRANSIENT SPECTROSCOPY
Authors: DALIBOR T PENSL G MATSUNAMI H KIMOTO T CHOYKE WJ SCHONER A NORDELL N
Citation: T. Dalibor et al., DEEP DEFECT CENTERS IN SILICON-CARBIDE MONITORED WITH DEEP-LEVEL TRANSIENT SPECTROSCOPY, Physica status solidi. a, Applied research, 162(1), 1997, pp. 199-225
INVESTIGATION OF ALUMINUM NITRIDE GROWN BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION ON SILICON
Authors: ZETTERLING CM OSTLING M WONGCHOTIGUL K SPENCER MG TANG X HARRIS CI NORDELL N WONG SS
Citation: Cm. Zetterling et al., INVESTIGATION OF ALUMINUM NITRIDE GROWN BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION ON SILICON, Journal of applied physics, 82(6), 1997, pp. 2990-2995
DEEP-LEVEL DEFECTS IN ELECTRON-IRRADIATED 4H SIC EPITAXIAL LAYERS
Authors: HEMMINGSSON C SON NT KORDINA O BERGMAN JP JANZEN E LINDSTROM JL SAVAGE S NORDELL N
Citation: C. Hemmingsson et al., DEEP-LEVEL DEFECTS IN ELECTRON-IRRADIATED 4H SIC EPITAXIAL LAYERS, Journal of applied physics, 81(9), 1997, pp. 6155-6159
IONIZATION RATES AND CRITICAL FIELDS IN 4H SILICON-CARBIDE
Authors: KONSTANTINOV AO WAHAB Q NORDELL N LINDEFELT U
Citation: Ao. Konstantinov et al., IONIZATION RATES AND CRITICAL FIELDS IN 4H SILICON-CARBIDE, Applied physics letters, 71(1), 1997, pp. 90-92
INFLUENCE OF GROWTH-CONDITIONS ON ELECTRICAL CHARACTERISTICS OF ALN ON SIC
Authors: ZETTERLING CM OSTLING M NORDELL N SCHON O DESCHLER M
Citation: Cm. Zetterling et al., INFLUENCE OF GROWTH-CONDITIONS ON ELECTRICAL CHARACTERISTICS OF ALN ON SIC, Applied physics letters, 70(26), 1997, pp. 3549-3551
DESIGN AND PERFORMANCE OF A NEW REACTOR FOR VAPOR-PHASE EPITAXY OF 3C, 6H, AND 4H SIC
Authors: NORDELL N SCHONER A ANDERSSON SG
Citation: N. Nordell et al., DESIGN AND PERFORMANCE OF A NEW REACTOR FOR VAPOR-PHASE EPITAXY OF 3C, 6H, AND 4H SIC, Journal of the Electrochemical Society, 143(9), 1996, pp. 2910-2919
INFLUENCE OF H-2 ADDITION AND GROWTH TEMPERATURE ON CVD OF SIC USING HEXAMETHYLDISILANE AND AR
Authors: NORDELL N NISHINO S YANG JW JACOB C PIROUZ P
Citation: N. Nordell et al., INFLUENCE OF H-2 ADDITION AND GROWTH TEMPERATURE ON CVD OF SIC USING HEXAMETHYLDISILANE AND AR, Journal of the Electrochemical Society, 142(2), 1995, pp. 565-571
GROWTH OF SIC USING HEXAMETHYLDISILANE IN A HYDROGEN-POOR AMBIENT
Authors: NORDELL N NISHINO S YANG JW JACOB C PIROUZ P
Citation: N. Nordell et al., GROWTH OF SIC USING HEXAMETHYLDISILANE IN A HYDROGEN-POOR AMBIENT, Applied physics letters, 64(13), 1994, pp. 1647-1649
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