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Results: 1-25/26
Authors:
Chen, HJ
Feenstra, RM
Northrup, J
Neugebauer, J
Greve, DW
Citation: Hj. Chen et al., Indium incorporation and surface segregation during InGaN growth by molecular beam epitaxy: experiment and theory, MRS I J N S, 6(11), 2001, pp. NIL_1-NIL_12
Authors:
Lee, CD
Feenstra, RM
Rosa, AL
Neugebauer, J
Northrup, JE
Citation: Cd. Lee et al., Silicon on GaN(0001) and (000(1)over-bar) surfaces, J VAC SCI B, 19(4), 2001, pp. 1619-1625
Authors:
Neugebauer, J
Citation: J. Neugebauer, Ab initio analysis of surface structure and adatom kinetics of group-III nitrides, PHYS ST S-B, 227(1), 2001, pp. 93-114
Authors:
Van de Walle, CG
Limpijumnong, S
Neugebauer, J
Citation: Cg. Van De Walle et al., First-principles studies of beryllium doping of GaN - art. no. 245205, PHYS REV B, 6324(24), 2001, pp. 5205
Authors:
Grosse, F
Neugebauer, J
Citation: F. Grosse et J. Neugebauer, Limits and accuracy of valence force field models for InxGa1-xN alloys - art. no. 085207, PHYS REV B, 6308(8), 2001, pp. 5207
Authors:
Neugebauer, J
Greiner, B
Appel, E
Citation: J. Neugebauer et al., Kinematics of the Alpine-West Carpathian orogen and palaeogeographic implications, J GEOL SOC, 158, 2001, pp. 97-110
Authors:
Ebert, P
Quadbeck, P
Urban, K
Henninger, B
Horn, K
Schwarz, G
Neugebauer, J
Scheffler, M
Citation: P. Ebert et al., Identification of surface anion antisite defects in (110) surfaces of III-V semiconductors, APPL PHYS L, 79(18), 2001, pp. 2877-2879
Authors:
Northrup, JE
Neugebauer, J
Feenstra, RM
Smith, AR
Citation: Je. Northrup et al., Structure of GaN(0001): The laterally contracted Ga bilayer model, PHYS REV B, 61(15), 2000, pp. 9932-9935
Authors:
Chen, HJ
Feenstra, RM
Northrup, JE
Zywietz, T
Neugebauer, J
Greve, DW
Citation: Hj. Chen et al., Surface structures and growth kinetics of InGaN(0001) grown by molecular beam epitaxy, J VAC SCI B, 18(4), 2000, pp. 2284-2289
Authors:
Watzinger, E
Luksch, J
Millesi, W
Schopper, C
Neugebauer, J
Moser, D
Ewers, R
Citation: E. Watzinger et al., Guided bone regeneration with titanium membranes: a clinical study, BR J ORAL M, 38(4), 2000, pp. 312-315
Authors:
Feenstra, RM
Chen, HJ
Ramachandran, V
Lee, CD
Smith, AR
Northrup, JE
Zywietz, T
Neugebauer, J
Greve, DW
Citation: Rm. Feenstra et al., Surface morphology of GaN surfaces during molecular beam epitaxy, SURF REV L, 7(5-6), 2000, pp. 601-606
Authors:
Neugebauer, J
Zywietz, T
Scheffler, M
Northrup, J
Citation: J. Neugebauer et al., Theory of surfaces and interfaces of group III-nitrides, APPL SURF S, 159, 2000, pp. 355-359
Authors:
Chen, HJ
Feenstra, RM
Northrup, JE
Zywietz, T
Neugebauer, J
Citation: Hj. Chen et al., Spontaneous formation of indium-rich nanostructures on InGaN(0001) surfaces, PHYS REV L, 85(9), 2000, pp. 1902-1905
Authors:
Ebert, P
Urban, K
Aballe, L
Chen, CH
Horn, K
Schwarz, G
Neugebauer, J
Scheffler, M
Citation: P. Ebert et al., Symmetric versus nonsymmetric structure of the phosphorus vacancy on InP(110), PHYS REV L, 84(25), 2000, pp. 5816-5819
Authors:
Deng, SJ
Bickett, DM
Mitchell, JL
Lambert, MH
Blackburn, RK
Carter, HL
Neugebauer, J
Pahel, G
Weiner, MP
Moss, ML
Citation: Sj. Deng et al., Substrate specificity of human collagenase 3 assessed using a phage-displayed peptide library, J BIOL CHEM, 275(40), 2000, pp. 31422-31427
Authors:
Van de Walle, CG
Neugebauer, J
Citation: Cg. Van De Walle et J. Neugebauer, Arsenic impurities in GaN, APPL PHYS L, 76(8), 2000, pp. 1009-1011
Authors:
Hegedus, E
Neugebauer, J
Citation: E. Hegedus et J. Neugebauer, The effect of phosphorus on the formation of tungsten dioxide: A novel morphology, SCR MATER, 40(6), 1999, pp. 705-710
Authors:
Stampfl, C
Neugebauer, J
Van de Walle, CG
Citation: C. Stampfl et al., Doping of AlxGa1-xN alloys, MAT SCI E B, 59(1-3), 1999, pp. 253-257
Authors:
Abels, N
Schiel, HJ
Hery-Langer, G
Neugebauer, J
Engel, M
Citation: N. Abels et al., Bone condensing in the placement of endosteal palatal implants: A case report, INT J O M I, 14(6), 1999, pp. 849-852
Authors:
Van de Walle, CG
Neugebauer, J
Stampfl, C
McCluskey, MD
Johnson, NM
Citation: Cg. Van De Walle et al., Defects and defect reactions in semiconductor nitrides, ACT PHY P A, 96(5), 1999, pp. 613-627
Authors:
Northrup, JE
Neugebauer, J
Citation: Je. Northrup et J. Neugebauer, Indium-induced changes in GaN(0001) surface morphology, PHYS REV B, 60(12), 1999, pp. R8473-R8476
Authors:
Neugebauer, J
Van de Walle, CG
Citation: J. Neugebauer et Cg. Van De Walle, Theory of hydrogen in GaN, SEM SEMIMET, 61, 1999, pp. 479-502
Authors:
Smith, AR
Feenstra, RM
Greve, DW
Shin, MS
Skowronski, M
Neugebauer, J
Northrup, JE
Citation: Ar. Smith et al., GaN(0001) surface structures studied using scanning tunneling microscopy and first-principles total energy calculations, SURF SCI, 423(1), 1999, pp. 70-84
Authors:
Neugebauer, J
Van de Walle, CG
Citation: J. Neugebauer et Cg. Van De Walle, Chemical trends for acceptor impurities in GaN, J APPL PHYS, 85(5), 1999, pp. 3003-3005
Authors:
Northrup, JE
Romano, LT
Neugebauer, J
Citation: Je. Northrup et al., Surface energetics, pit formation, and chemical ordering in InGaN alloys, APPL PHYS L, 74(16), 1999, pp. 2319-2321