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Authors:
SCHAEPKENS M
OEHRLEIN GS
HEDLUND C
JONSSON LB
BLOM HO
Citation: M. Schaepkens et al., SELECTIVE SIO2-TO-SI3N4 ETCHING IN INDUCTIVELY-COUPLED FLUOROCARBON PLASMAS - ANGULAR-DEPENDENCE OF SIO2 AND SI3N4 ETCHING RATES, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(6), 1998, pp. 3281-3286
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Authors:
SCHAEPKENS M
BOSCH RCM
STANDAERT TEFM
OEHRLEIN GS
COOK JM
Citation: M. Schaepkens et al., INFLUENCE OF REACTOR WALL CONDITIONS ON ETCH PROCESSES IN INDUCTIVELY-COUPLED FLUOROCARBON PLASMAS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(4), 1998, pp. 2099-2107
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SCHAEPKENS M
RUEGER NR
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OEHRLEIN GS
COOK JM
Citation: Tefm. Standaert et al., HIGH-DENSITY FLUOROCARBON ETCHING OF SILICON IN AN INDUCTIVELY-COUPLED PLASMA - MECHANISM OF ETCHING THROUGH A THICK STEADY-STATE FLUOROCARBON LAYER, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(1), 1998, pp. 239-249
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Citation: M. Schaepkens et Gs. Oehrlein, ASYMMETRIC MICROTRENCHING DURING INDUCTIVELY-COUPLED PLASMA OXIDE ETCHING IN THE PRESENCE OF A WEAK MAGNETIC-FIELD, Applied physics letters, 72(11), 1998, pp. 1293-1295
Citation: Pj. Matsuo et al., ROLE OF N-2 ADDITION ON CF4 O-2 REMOTE PLASMA CHEMICAL DRY-ETCHING OFPOLYCRYSTALLINE SILICON/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(4), 1997, pp. 1801-1813
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BEULENS JJ
SCHAEPKENS M
DOEMLING MF
MIRZA JM
STANDAERT TEFM
OEHRLEIN GS
Citation: Nr. Rueger et al., ROLE OF STEADY-STATE FLUOROCARBON FILMS IN THE ETCHING OF SILICON DIOXIDE USING CHF3 IN AN INDUCTIVELY-COUPLED PLASMA REACTOR, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(4), 1997, pp. 1881-1889
Citation: Bee. Kastenmeier et al., CHEMICAL DRY-ETCHING OF SILICON-NITRIDE AND SILICON DIOXIDE USING CF4O-2/N-2 GAS-MIXTURES/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(5), 1996, pp. 2802-2813
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Authors:
BUYANOVA IA
HENRY A
MONEMAR B
LINDSTROM JL
OEHRLEIN GS
Citation: Ia. Buyanova et al., PHOTOLUMINESCENCE OF DEFECTS INDUCED IN SILICON BY SF6 O-2 REACTIVE-ION ETCHING/, Journal of applied physics, 78(5), 1995, pp. 3348-3352
Citation: Jj. Beulens et al., CHEMICAL DOWNSTREAM ETCHING OF SILICON-NITRIDE AND POLYCRYSTALLINE SILICON USING CF4 O-2/N-2 - SURFACE CHEMICAL EFFECTS OF O-2 AND N-2 ADDITIVES/, Applied physics letters, 66(20), 1995, pp. 2634-2636
Citation: M. Haverlag et al., SIDEWALL PASSIVATION DURING THE ETCHING OF POLY-SI IN AN ELECTRON-CYCLOTRON-RESONANCE PLASMA OF HBR, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(1), 1994, pp. 96-101
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BELL FH
JOUBERT O
OEHRLEIN GS
ZHANG Y
VENDER D
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Citation: Khr. Kirmse et al., FLUOROCARBON HIGH-DENSITY PLASMAS .8. STUDY OF THE ION FLUX COMPOSITION AT THE SUBSTRATE IN ELECTRON-CYCLOTRON-RESONANCE ETCHING PROCESSES USING FLUOROCARBON GASES, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(4), 1994, pp. 1287-1292
Citation: O. Joubert et al., FLUOROCARBON HIGH-DENSITY PLASMA .5. INFLUENCE OF ASPECT RATIO ON THEETCH RATE OF SILICON DIOXIDE IN AN ELECTRON-CYCLOTRON-RESONANCE PLASMA, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(3), 1994, pp. 658-664
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Citation: Gs. Oehrlein et al., FLUOROCARBON HIGH-DENSITY PLASMAS .1. FLUOROCARBON FILM DEPOSITION AND ETCHING USING CF4 AND CHF3, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(2), 1994, pp. 323-332
Citation: Gs. Oehrlein et al., FLUOROCARBON HIGH-DENSITY PLASMAS .2. SILICON DIOXIDE AND SILICON ETCHING USING CF4 AND CHF3, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(2), 1994, pp. 333-344