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Results: 1-25 | 26-29
Results: 1-25/29
PHOTORESIST EROSION STUDIED IN AN INDUCTIVELY-COUPLED PLASMA REACTOR EMPLOYING CHF3
Authors: DOEMLING MF RUEGER NR OEHRLEIN GS COOK JM
Citation: Mf. Doemling et al., PHOTORESIST EROSION STUDIED IN AN INDUCTIVELY-COUPLED PLASMA REACTOR EMPLOYING CHF3, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 1998-2005
SELECTIVE SIO2-TO-SI3N4 ETCHING IN INDUCTIVELY-COUPLED FLUOROCARBON PLASMAS - ANGULAR-DEPENDENCE OF SIO2 AND SI3N4 ETCHING RATES
Authors: SCHAEPKENS M OEHRLEIN GS HEDLUND C JONSSON LB BLOM HO
Citation: M. Schaepkens et al., SELECTIVE SIO2-TO-SI3N4 ETCHING IN INDUCTIVELY-COUPLED FLUOROCARBON PLASMAS - ANGULAR-DEPENDENCE OF SIO2 AND SI3N4 ETCHING RATES, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(6), 1998, pp. 3281-3286
REMOTE PLASMA-ETCHING OF SILICON-NITRIDE AND SILICON DIOXIDE USING NF3 O-2 GAS-MIXTURES/
Authors: KASTENMEIER BEE MATSUO PJ OEHRLEIN GS LANGAN JG
Citation: Bee. Kastenmeier et al., REMOTE PLASMA-ETCHING OF SILICON-NITRIDE AND SILICON DIOXIDE USING NF3 O-2 GAS-MIXTURES/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(4), 1998, pp. 2047-2056
INFLUENCE OF REACTOR WALL CONDITIONS ON ETCH PROCESSES IN INDUCTIVELY-COUPLED FLUOROCARBON PLASMAS
Authors: SCHAEPKENS M BOSCH RCM STANDAERT TEFM OEHRLEIN GS COOK JM
Citation: M. Schaepkens et al., INFLUENCE OF REACTOR WALL CONDITIONS ON ETCH PROCESSES IN INDUCTIVELY-COUPLED FLUOROCARBON PLASMAS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(4), 1998, pp. 2099-2107
HIGH-DENSITY FLUOROCARBON ETCHING OF SILICON IN AN INDUCTIVELY-COUPLED PLASMA - MECHANISM OF ETCHING THROUGH A THICK STEADY-STATE FLUOROCARBON LAYER
Authors: STANDAERT TEFM SCHAEPKENS M RUEGER NR SEBEL PGM OEHRLEIN GS COOK JM
Citation: Tefm. Standaert et al., HIGH-DENSITY FLUOROCARBON ETCHING OF SILICON IN AN INDUCTIVELY-COUPLED PLASMA - MECHANISM OF ETCHING THROUGH A THICK STEADY-STATE FLUOROCARBON LAYER, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(1), 1998, pp. 239-249
COMMENT ON MICROSCOPIC IDENTIFICATION AND ELECTRONIC-STRUCTURE OF A DI-HYDROGEN-VACANCY COMPLEX IN SILICON BY OPTICAL-DETECTION OF MAGNETIC-RESONANCE - REPLY
Authors: CHEN WM AWADELKARIM OO MONEMAR B LINDSTROM JL OEHRLEIN GS
Citation: Wm. Chen et al., COMMENT ON MICROSCOPIC IDENTIFICATION AND ELECTRONIC-STRUCTURE OF A DI-HYDROGEN-VACANCY COMPLEX IN SILICON BY OPTICAL-DETECTION OF MAGNETIC-RESONANCE - REPLY, Physical review letters, 80(2), 1998, pp. 423-423
ASYMMETRIC MICROTRENCHING DURING INDUCTIVELY-COUPLED PLASMA OXIDE ETCHING IN THE PRESENCE OF A WEAK MAGNETIC-FIELD
Authors: SCHAEPKENS M OEHRLEIN GS
Citation: M. Schaepkens et Gs. Oehrlein, ASYMMETRIC MICROTRENCHING DURING INDUCTIVELY-COUPLED PLASMA OXIDE ETCHING IN THE PRESENCE OF A WEAK MAGNETIC-FIELD, Applied physics letters, 72(11), 1998, pp. 1293-1295
ROLE OF N-2 ADDITION ON CF4 O-2 REMOTE PLASMA CHEMICAL DRY-ETCHING OFPOLYCRYSTALLINE SILICON/
Authors: MATSUO PJ KASTENMEIER BEE BEULENS JJ OEHRLEIN GS
Citation: Pj. Matsuo et al., ROLE OF N-2 ADDITION ON CF4 O-2 REMOTE PLASMA CHEMICAL DRY-ETCHING OFPOLYCRYSTALLINE SILICON/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(4), 1997, pp. 1801-1813
ROLE OF STEADY-STATE FLUOROCARBON FILMS IN THE ETCHING OF SILICON DIOXIDE USING CHF3 IN AN INDUCTIVELY-COUPLED PLASMA REACTOR
Authors: RUEGER NR BEULENS JJ SCHAEPKENS M DOEMLING MF MIRZA JM STANDAERT TEFM OEHRLEIN GS
Citation: Nr. Rueger et al., ROLE OF STEADY-STATE FLUOROCARBON FILMS IN THE ETCHING OF SILICON DIOXIDE USING CHF3 IN AN INDUCTIVELY-COUPLED PLASMA REACTOR, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(4), 1997, pp. 1881-1889
SURFACE PROCESSES IN LOW-PRESSURE PLASMAS
Authors: OEHRLEIN GS
Citation: Gs. Oehrlein, SURFACE PROCESSES IN LOW-PRESSURE PLASMAS, Surface science, 386(1-3), 1997, pp. 222-230
PHOTOLUMINESCENCE CHARACTERIZATION OF SF6-O-2 PLASMA-ETCHING OF SILICON
Authors: BUYANOVA IA HENRY A MONEMAR B LINDSTROM JL OEHRLEIN GS
Citation: Ia. Buyanova et al., PHOTOLUMINESCENCE CHARACTERIZATION OF SF6-O-2 PLASMA-ETCHING OF SILICON, Materials science & engineering. B, Solid-state materials for advanced technology, 36(1-3), 1996, pp. 100-103
FLUOROCARBON HIGH-DENSITY PLASMAS .7. INVESTIGATION OF SELECTIVE SIO2-TO-SI3N4 HIGH-DENSITY PLASMA ETCH PROCESSES (VOL 14, PG 2127, 1996)
Authors: ZHANG Y OEHRLEIN GS BELL FH
Citation: Y. Zhang et al., FLUOROCARBON HIGH-DENSITY PLASMAS .7. INVESTIGATION OF SELECTIVE SIO2-TO-SI3N4 HIGH-DENSITY PLASMA ETCH PROCESSES (VOL 14, PG 2127, 1996), Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(6), 1996, pp. 3291-3291
CHEMICAL DRY-ETCHING OF SILICON-NITRIDE AND SILICON DIOXIDE USING CF4O-2/N-2 GAS-MIXTURES/
Authors: KASTENMEIER BEE MATSUO PJ BEULENS JJ OEHRLEIN GS
Citation: Bee. Kastenmeier et al., CHEMICAL DRY-ETCHING OF SILICON-NITRIDE AND SILICON DIOXIDE USING CF4O-2/N-2 GAS-MIXTURES/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(5), 1996, pp. 2802-2813
FLUOROCARBON HIGH-DENSITY PLASMAS .7. INVESTIGATION OF SELECTIVE SIO2-TO-SI3N4 HIGH-DENSITY PLASMA ETCH PROCESSES
Authors: ZHANG Y OEHRLEIN GS BELL FH
Citation: Y. Zhang et al., FLUOROCARBON HIGH-DENSITY PLASMAS .7. INVESTIGATION OF SELECTIVE SIO2-TO-SI3N4 HIGH-DENSITY PLASMA ETCH PROCESSES, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(4), 1996, pp. 2127-2137
OBSERVATION OF INVERSE REACTIVE ION ETCHING LAG FOR SILICON DIOXIDE ETCHING IN INDUCTIVELY-COUPLED PLASMAS
Authors: DOEMLING MF RUEGER NR OEHRLEIN GS
Citation: Mf. Doemling et al., OBSERVATION OF INVERSE REACTIVE ION ETCHING LAG FOR SILICON DIOXIDE ETCHING IN INDUCTIVELY-COUPLED PLASMAS, Applied physics letters, 68(1), 1996, pp. 10-12
PHOTOLUMINESCENCE OF DEFECTS INDUCED IN SILICON BY SF6 O-2 REACTIVE-ION ETCHING/
Authors: BUYANOVA IA HENRY A MONEMAR B LINDSTROM JL OEHRLEIN GS
Citation: Ia. Buyanova et al., PHOTOLUMINESCENCE OF DEFECTS INDUCED IN SILICON BY SF6 O-2 REACTIVE-ION ETCHING/, Journal of applied physics, 78(5), 1995, pp. 3348-3352
CHEMICAL DOWNSTREAM ETCHING OF SILICON-NITRIDE AND POLYCRYSTALLINE SILICON USING CF4 O-2/N-2 - SURFACE CHEMICAL EFFECTS OF O-2 AND N-2 ADDITIVES/
Authors: BEULENS JJ KASTENMEIER BEE MATSUO PJ OEHRLEIN GS
Citation: Jj. Beulens et al., CHEMICAL DOWNSTREAM ETCHING OF SILICON-NITRIDE AND POLYCRYSTALLINE SILICON USING CF4 O-2/N-2 - SURFACE CHEMICAL EFFECTS OF O-2 AND N-2 ADDITIVES/, Applied physics letters, 66(20), 1995, pp. 2634-2636
SIDEWALL PASSIVATION DURING THE ETCHING OF POLY-SI IN AN ELECTRON-CYCLOTRON-RESONANCE PLASMA OF HBR
Authors: HAVERLAG M OEHRLEIN GS VENDER D
Citation: M. Haverlag et al., SIDEWALL PASSIVATION DURING THE ETCHING OF POLY-SI IN AN ELECTRON-CYCLOTRON-RESONANCE PLASMA OF HBR, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(1), 1994, pp. 96-101
INVESTIGATION OF SELECTIVE SIO2-TO-SI ETCHING IN AN INDUCTIVELY-COUPLED HIGH-DENSITY PLASMA USING FLUOROCARBON GASES
Authors: BELL FH JOUBERT O OEHRLEIN GS ZHANG Y VENDER D
Citation: Fh. Bell et al., INVESTIGATION OF SELECTIVE SIO2-TO-SI ETCHING IN AN INDUCTIVELY-COUPLED HIGH-DENSITY PLASMA USING FLUOROCARBON GASES, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(6), 1994, pp. 3095-3101
REACTIVE ION ETCHING LAG INVESTIGATION OF OXIDE ETCHING IN FLUOROCARBON ELECTRON-CYCLOTRON-RESONANCE PLASMAS
Authors: JOUBERT O OEHRLEIN GS SURENDRA M ZHANG Y
Citation: O. Joubert et al., REACTIVE ION ETCHING LAG INVESTIGATION OF OXIDE ETCHING IN FLUOROCARBON ELECTRON-CYCLOTRON-RESONANCE PLASMAS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(4), 1994, pp. 1957-1961
FLUOROCARBON HIGH-DENSITY PLASMAS .8. STUDY OF THE ION FLUX COMPOSITION AT THE SUBSTRATE IN ELECTRON-CYCLOTRON-RESONANCE ETCHING PROCESSES USING FLUOROCARBON GASES
Authors: KIRMSE KHR WENDT AE OEHRLEIN GS ZHANG Y
Citation: Khr. Kirmse et al., FLUOROCARBON HIGH-DENSITY PLASMAS .8. STUDY OF THE ION FLUX COMPOSITION AT THE SUBSTRATE IN ELECTRON-CYCLOTRON-RESONANCE ETCHING PROCESSES USING FLUOROCARBON GASES, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(4), 1994, pp. 1287-1292
FLUOROCARBON HIGH-DENSITY PLASMA .5. INFLUENCE OF ASPECT RATIO ON THEETCH RATE OF SILICON DIOXIDE IN AN ELECTRON-CYCLOTRON-RESONANCE PLASMA
Authors: JOUBERT O OEHRLEIN GS ZHANG Y
Citation: O. Joubert et al., FLUOROCARBON HIGH-DENSITY PLASMA .5. INFLUENCE OF ASPECT RATIO ON THEETCH RATE OF SILICON DIOXIDE IN AN ELECTRON-CYCLOTRON-RESONANCE PLASMA, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(3), 1994, pp. 658-664
FLUOROCARBON HIGH-DENSITY PLASMA .6. REACTIVE ION ETCHING LAG MODEL FOR CONTACT HOLE SILICON DIOXIDE ETCHING IN AN ELECTRON-CYCLOTRON-RESONANCE PLASMA
Authors: JOUBERT O OEHRLEIN GS SURENDRA M
Citation: O. Joubert et al., FLUOROCARBON HIGH-DENSITY PLASMA .6. REACTIVE ION ETCHING LAG MODEL FOR CONTACT HOLE SILICON DIOXIDE ETCHING IN AN ELECTRON-CYCLOTRON-RESONANCE PLASMA, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(3), 1994, pp. 665-670
FLUOROCARBON HIGH-DENSITY PLASMAS .1. FLUOROCARBON FILM DEPOSITION AND ETCHING USING CF4 AND CHF3
Authors: OEHRLEIN GS ZHANG Y VENDER D HAVERLAG M
Citation: Gs. Oehrlein et al., FLUOROCARBON HIGH-DENSITY PLASMAS .1. FLUOROCARBON FILM DEPOSITION AND ETCHING USING CF4 AND CHF3, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(2), 1994, pp. 323-332
FLUOROCARBON HIGH-DENSITY PLASMAS .2. SILICON DIOXIDE AND SILICON ETCHING USING CF4 AND CHF3
Authors: OEHRLEIN GS ZHANG Y VENDER D JOUBERT O
Citation: Gs. Oehrlein et al., FLUOROCARBON HIGH-DENSITY PLASMAS .2. SILICON DIOXIDE AND SILICON ETCHING USING CF4 AND CHF3, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(2), 1994, pp. 333-344
Risultati: 1-25 | 26-29