Citation: Lujt. Ogbuji, SUBPARABOLIC OXIDATION BEHAVIOR OF SILICON-CARBIDE AT 1300-DEGREES-C, Journal of the Electrochemical Society, 145(8), 1998, pp. 2876-2882
Citation: Lujt. Ogbuji, A PERVASIVE MODE OF OXIDATIVE-DEGRADATION IN A SIC-SIC COMPOSITE, Journal of the American Ceramic Society, 81(11), 1998, pp. 2777-2784
Citation: Lujt. Ogbuji, EFFECT OF OXIDE DEVITRIFICATION ON OXIDATION-KINETICS OF SIC, Journal of the American Ceramic Society, 80(6), 1997, pp. 1544-1550
Citation: Lujt. Ogbuji et M. Singh, HIGH-TEMPERATURE OXIDATION BEHAVIOR OF REACTION-FORMED SILICON-CARBIDE CERAMICS, Journal of materials research, 10(12), 1995, pp. 3232-3240
Citation: Lujt. Ogbuji et Dr. Harding, A NOVEL METHOD FOR DETERMINING THE STRENGTH OF PECVD SILICON (OXY)NITRIDE FILMS, Thin solid films, 263(2), 1995, pp. 194-197
Citation: Lujt. Ogbuji et Ej. Opila, A COMPARISON OF THE OXIDATION-KINETICS OF SIC AND SI3N4, Journal of the Electrochemical Society, 142(3), 1995, pp. 925-930
Citation: Lujt. Ogbuji et Sr. Bryan, THE SIO2-SI3N4 INTERFACE, .1. NATURE OF THE INTERPHASE, Journal of the American Ceramic Society, 78(5), 1995, pp. 1272-1278
Citation: Lujt. Ogbuji, THE SIO2-SI3N4 INTERFACE .2. O-2 PERMEATION AND OXIDATION REACTION, Journal of the American Ceramic Society, 78(5), 1995, pp. 1279-1284