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Authors: AKIMOV AG BARABANENKOV MY BARANOCHNIKOV ML LEONOV AV MOKRUSHIN AD MORDKOVICH VN OMELYANOVSKAYA NM

Citation: Ag. Akimov et al., A CONTROLLABLE RESISTOR WITH FEATURES OF A FIELD-EFFECT TRANSISTOR AND SEMICONDUCTOR HALL-EFFECT SENSOR, Instruments and experimental techniques (New York), 41(5), 1998, pp. 706-709

Authors: BOLDYREV SN MORDKOVICH VN OMELYANOVSKAYA NM FEKLISOVA OV YARYKIN NA

Citation: Sn. Boldyrev et al., EFFECT OF PHOTOEXCITATION ON THE EFFICIENCY OF DEFECT CREATION DURINGELECTRON-BOMBARDMENT OF SILICON, Semiconductors, 28(10), 1994, pp. 1009-1011

Authors: BOLDYREV SN MORDKOVICH VN OMELYANOVSKAYA NM

Citation: Sn. Boldyrev et al., INFLUENCE OF IN-SITU PHOTOEXCITATION ON THE RADIATION DEFECT FORMATION IN ELECTRON-IRRADIATED SILICON, Physica status solidi. a, Applied research, 143(2), 1994, pp. 110000071-110000074

Authors: OMELYANOVSKAYA NM KRASNOBAEV LY FEDOROV VV

Citation: Nm. Omelyanovskaya et al., INFLUENCE OF POSTIMPLANTATION ANNEALING ON ELECTRICAL-PROPERTIES OF FLUORINE-IMPLANTED SILICON LAYERS, Semiconductors, 27(4), 1993, pp. 308-310

Authors: KRASNOBAEV LY OMELYANOVSKAYA NM MAKAROV VV

Citation: Ly. Krasnobaev et al., THE EFFECT OF FLUORINE ON THE REDISTRIBUTION OF BORON IN ION-IMPLANTED SILICON, Journal of applied physics, 74(10), 1993, pp. 6020-6022