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Results: 1-20 |
Results: 20
SURFACE EVOLUTION DURING MBE GROWTH
Authors: ORME C ORR BG
Citation: C. Orme et Bg. Orr, SURFACE EVOLUTION DURING MBE GROWTH, Surface review and letters, 4(1), 1997, pp. 71-105
ADATOM DENSITIES ON GAAS - EVIDENCE FOR NEAR-EQUILIBRIUM GROWTH
Authors: TERSOFF J JOHNSON MD ORR BG
Citation: J. Tersoff et al., ADATOM DENSITIES ON GAAS - EVIDENCE FOR NEAR-EQUILIBRIUM GROWTH, Physical review letters, 78(2), 1997, pp. 282-285
ADATOM CONCENTRATION ON GAAS(001) DURING ANNEALING
Authors: JOHNSON MD LEUNG KT BIRCH A ORR BG
Citation: Md. Johnson et al., ADATOM CONCENTRATION ON GAAS(001) DURING ANNEALING, Journal of crystal growth, 174(1-4), 1997, pp. 572-578
SCANNING-TUNNELING-MICROSCOPY STUDIES OF SEMICONDUCTOR SURFACE-STRUCTURE AND GROWTH
Authors: ORR BG
Citation: Bg. Orr, SCANNING-TUNNELING-MICROSCOPY STUDIES OF SEMICONDUCTOR SURFACE-STRUCTURE AND GROWTH, Current opinion in solid state & materials science, 1(1), 1996, pp. 11-16
REALIZATION OF IN-SITU SUB 2-DIMENSIONAL QUANTUM STRUCTURES BY STRAINED-LAYER GROWTH PHENOMENA IN THE INXGA1-XAS GAAS SYSTEM/
Authors: PAMULAPATI J BHATTACHARYA PK SINGH J BERGER PR SNYDER CW ORR BG TOBER RL
Citation: J. Pamulapati et al., REALIZATION OF IN-SITU SUB 2-DIMENSIONAL QUANTUM STRUCTURES BY STRAINED-LAYER GROWTH PHENOMENA IN THE INXGA1-XAS GAAS SYSTEM/, Journal of electronic materials, 25(3), 1996, pp. 479-483
COMPETING DESORPTION PATHWAYS DURING EPITAXIAL-GROWTH - LEEM INVESTIGATION OF CU W(110) HETEROEPITAXY/
Authors: LUO EZ CAI Q CHUNG WF ORR BG ALTMAN MS
Citation: Ez. Luo et al., COMPETING DESORPTION PATHWAYS DURING EPITAXIAL-GROWTH - LEEM INVESTIGATION OF CU W(110) HETEROEPITAXY/, Physical review. B, Condensed matter, 54(20), 1996, pp. 14673-14678
ADATOM CONCENTRATION ON GAAS(001) DURING MBE ANNEALING
Authors: JOHNSON MD LEUNG KT BIRCH A ORR BG TERSOFF J
Citation: Md. Johnson et al., ADATOM CONCENTRATION ON GAAS(001) DURING MBE ANNEALING, Surface science, 350(1-3), 1996, pp. 254-258
ATOMIC-FORCE MICROSCOPY AND SCANNING-TUNNELING-MICROSCOPY STUDIES OF LARGE-SCALE UNSTABLE GROWTH FORMED DURING GAAS(001) HOMOEPITAXY
Authors: ORME C JOHNSON MD LEUNG KT ORR BG
Citation: C. Orme et al., ATOMIC-FORCE MICROSCOPY AND SCANNING-TUNNELING-MICROSCOPY STUDIES OF LARGE-SCALE UNSTABLE GROWTH FORMED DURING GAAS(001) HOMOEPITAXY, Materials science & engineering. B, Solid-state materials for advanced technology, 30(2-3), 1995, pp. 143-148
100-FEMTOSECOND 100-NANOMETER NEAR-FIELD PROBE
Authors: SMITH S ORR BG KOPELMAN R NORRIS T
Citation: S. Smith et al., 100-FEMTOSECOND 100-NANOMETER NEAR-FIELD PROBE, Ultramicroscopy, 57(2-3), 1995, pp. 173-175
RECONSTRUCTION OF THE GAAS(311) A-SURFACE
Authors: WASSERMEIER M SUDIJONO J JOHNSON MD LEUNG KT ORR BG DAWERITZ L PLOOG K
Citation: M. Wassermeier et al., RECONSTRUCTION OF THE GAAS(311) A-SURFACE, Physical review. B, Condensed matter, 51(20), 1995, pp. 14721-14724
STUDIES OF LARGE-SCALE UNSTABLE GROWTH FORMED DURING GAAS(001) HOMOEPITAXY
Authors: ORME C JOHNSON MD LEUNG KT ORR BG SMILAUER P VVEDENSKY D
Citation: C. Orme et al., STUDIES OF LARGE-SCALE UNSTABLE GROWTH FORMED DURING GAAS(001) HOMOEPITAXY, Journal of crystal growth, 150(1-4), 1995, pp. 128-135
SCANNING-TUNNELING-MICROSCOPY OF THE GAAS (311)A SURFACE RECONSTRUCTION
Authors: WASSERMEIER M SUDIJONO J JOHNSON MD LEUNG KT ORR BG DAWERITZ L PLOOG K
Citation: M. Wassermeier et al., SCANNING-TUNNELING-MICROSCOPY OF THE GAAS (311)A SURFACE RECONSTRUCTION, Journal of crystal growth, 150(1-4), 1995, pp. 425-430
INSTABILITIES IN MBE GROWTH
Authors: HUNT AW ORME C WILLIAMS DRM ORR BG SANDER LM
Citation: Aw. Hunt et al., INSTABILITIES IN MBE GROWTH, Europhysics letters, 27(8), 1994, pp. 611-616
SURFACE TRANSFORMATIONS ON ANNEALED GAAS(001)
Authors: SNYDER CW SUDIJONO J LAM CH JOHNSON MD ORR BG
Citation: Cw. Snyder et al., SURFACE TRANSFORMATIONS ON ANNEALED GAAS(001), Physical review. B, Condensed matter, 50(24), 1994, pp. 18194-18199
THE SURFACE EVOLUTION AND KINETIC ROUGHENING DURING HOMOEPITAXY OF GAAS (001)
Authors: ORR BG JOHNSON MD ORME C SUDIJONO J HUNT AW
Citation: Bg. Orr et al., THE SURFACE EVOLUTION AND KINETIC ROUGHENING DURING HOMOEPITAXY OF GAAS (001), Solid-state electronics, 37(4-6), 1994, pp. 1057-1063
STABLE AND UNSTABLE GROWTH IN MOLECULAR-BEAM EPITAXY
Authors: JOHNSON MD ORME C HUNT AW GRAFF D SUDIJONO J SANDER LM ORR BG
Citation: Md. Johnson et al., STABLE AND UNSTABLE GROWTH IN MOLECULAR-BEAM EPITAXY, Physical review letters, 72(1), 1994, pp. 116-119
LARGE-SCALE SURFACE-STRUCTURE FORMED DURING GAAS (001) HOMOEPITAXY
Authors: ORME C JOHNSON MD SUDIJONO JL LEUNG KT ORR BG
Citation: C. Orme et al., LARGE-SCALE SURFACE-STRUCTURE FORMED DURING GAAS (001) HOMOEPITAXY, Applied physics letters, 64(7), 1994, pp. 860-862
GROWTH MODE EVOLUTION DURING HOMOEPITAXY OF GAAS (001)
Authors: JOHNSON MD SUDIJONO J HUNT AW ORR BG
Citation: Md. Johnson et al., GROWTH MODE EVOLUTION DURING HOMOEPITAXY OF GAAS (001), Applied physics letters, 64(4), 1994, pp. 484-486
THE DYNAMICAL TRANSITION TO STEP-FLOW GROWTH DURING MOLECULAR-BEAM EPITAXY OF GAAS(001)
Authors: JOHNSON MD SUDIJONO J HUNT AW ORR BG
Citation: Md. Johnson et al., THE DYNAMICAL TRANSITION TO STEP-FLOW GROWTH DURING MOLECULAR-BEAM EPITAXY OF GAAS(001), Surface science, 298(2-3), 1993, pp. 392-398
AN STM STUDY OF MOLECULAR-BEAM EPITAXY GROWTH OF GAAS
Authors: ORR BG
Citation: Bg. Orr, AN STM STUDY OF MOLECULAR-BEAM EPITAXY GROWTH OF GAAS, Journal of crystal growth, 127(1-4), 1993, pp. 1032-1032
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