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Results: 1-22 |
Results: 22
SELF-HEATING IN HIGH-POWER ALGAN-GAN HFETS
Authors: GASKA R OSINSKY A YANG JW SHUR MS
Citation: R. Gaska et al., SELF-HEATING IN HIGH-POWER ALGAN-GAN HFETS, IEEE electron device letters, 19(3), 1998, pp. 89-91
ZNCDSE ZNSE QUANTUM-WELL WIRES FABRICATED BY REACTIVE ION ETCHING ANDWET CHEMICAL TREATMENT/
Authors: GUREVICH SA LAVROVA OA LOMASOV NV NESTEROV SI SKOPINA VI TANKLEVSKAYA EM TRAVNIKOV VV OSINSKY A QIU Y TEMKIN H RABE M HENNEBERGER F
Citation: Sa. Gurevich et al., ZNCDSE ZNSE QUANTUM-WELL WIRES FABRICATED BY REACTIVE ION ETCHING ANDWET CHEMICAL TREATMENT/, Semiconductor science and technology, 13(1), 1998, pp. 139-141
LOW-FREQUENCY NOISE AND PERFORMANCE OF GAN P-N-JUNCTION PHOTODETECTORS
Authors: KUKSENKOV DV TEMKIN H OSINSKY A GASKA R KHAN MA
Citation: Dv. Kuksenkov et al., LOW-FREQUENCY NOISE AND PERFORMANCE OF GAN P-N-JUNCTION PHOTODETECTORS, Journal of applied physics, 83(4), 1998, pp. 2142-2146
AVALANCHE BREAKDOWN AND BREAKDOWN LUMINESCENCE IN P-PI-N GAN DIODES
Authors: OSINSKY A SHUR MS GASKA R CHEN Q
Citation: A. Osinsky et al., AVALANCHE BREAKDOWN AND BREAKDOWN LUMINESCENCE IN P-PI-N GAN DIODES, Electronics Letters, 34(7), 1998, pp. 691-692
ELECTRON-TRANSPORT IN ALGAN-GAN HETEROSTRUCTURES GROWN ON 6H-SIC SUBSTRATES
Authors: GASKA R YANG JW OSINSKY A CHEN Q KHAN MA ORLOV AO SNIDER GL SHUR MS
Citation: R. Gaska et al., ELECTRON-TRANSPORT IN ALGAN-GAN HETEROSTRUCTURES GROWN ON 6H-SIC SUBSTRATES, Applied physics letters, 72(6), 1998, pp. 707-709
SCHOTTKY-BARRIER PHOTODETECTORS BASED ON ALGAN
Authors: OSINSKY A GANGOPADHYAY S LIM BW ANWAR MZ KHAN MA KUKSENKOV DV TEMKIN H
Citation: A. Osinsky et al., SCHOTTKY-BARRIER PHOTODETECTORS BASED ON ALGAN, Applied physics letters, 72(6), 1998, pp. 742-744
VISIBLE-BLIND GAN SCHOTTKY-BARRIER DETECTORS GROWN ON SI(111)
Authors: OSINSKY A GANGOPADHYAY S YANG JW GASKA R KUKSENKOV D TEMKIN H SHMAGIN IK CHANG YC MUTH JF KOLBAS RM
Citation: A. Osinsky et al., VISIBLE-BLIND GAN SCHOTTKY-BARRIER DETECTORS GROWN ON SI(111), Applied physics letters, 72(5), 1998, pp. 551-553
ORIGIN OF CONDUCTIVITY AND LOW-FREQUENCY NOISE IN REVERSE-BIASED GAN P-N-JUNCTION
Authors: KUKSENKOV DV TEMKIN H OSINSKY A GASKA R KHAN MA
Citation: Dv. Kuksenkov et al., ORIGIN OF CONDUCTIVITY AND LOW-FREQUENCY NOISE IN REVERSE-BIASED GAN P-N-JUNCTION, Applied physics letters, 72(11), 1998, pp. 1365-1367
HIGH-TEMPERATURE PERFORMANCE OF ALGAN GAN HFETS ON SIC SUBSTRATES/
Authors: GASKA R CHEN Q YANG J OSINSKY A KHAN MA SHUR MS
Citation: R. Gaska et al., HIGH-TEMPERATURE PERFORMANCE OF ALGAN GAN HFETS ON SIC SUBSTRATES/, IEEE electron device letters, 18(10), 1997, pp. 492-494
8X8 GAN SCHOTTKY-BARRIER PHOTODIODE-ARRAY FOR VISIBLE-BLIND IMAGING
Authors: LIM BW GANGOPADHYAY S YANG JW OSINSKY A CHEN Q ANWAR MZ KHAN MA
Citation: Bw. Lim et al., 8X8 GAN SCHOTTKY-BARRIER PHOTODIODE-ARRAY FOR VISIBLE-BLIND IMAGING, Electronics Letters, 33(7), 1997, pp. 633-634
NOVEL WET CHEMICAL ETCH FOR NANOSTRUCTURES BASED ON II-VI COMPOUNDS
Authors: OSINSKY A QIU Y MAHAN J TEMKIN H GUREVICH SA NESTEROV SI TANKLEVSKAIA EM TRETYAKOV V LAVROVA OA SKOPINA VI
Citation: A. Osinsky et al., NOVEL WET CHEMICAL ETCH FOR NANOSTRUCTURES BASED ON II-VI COMPOUNDS, Applied physics letters, 71(4), 1997, pp. 509-511
PIEZOEFFECT AND GATE CURRENT IN ALGAN GAN HIGH-ELECTRON-MOBILITY TRANSISTORS/
Authors: GASKA R YANG JW OSINSKY A BYKHOVSKI AD SHUR MS
Citation: R. Gaska et al., PIEZOEFFECT AND GATE CURRENT IN ALGAN GAN HIGH-ELECTRON-MOBILITY TRANSISTORS/, Applied physics letters, 71(25), 1997, pp. 3673-3675
LOW NOISE P-PI-N GAN ULTRAVIOLET PHOTODETECTORS
Authors: OSINSKY A GANGOPADHYAY S GASKA R WILLIAMS B KHAN MA KUKSENKOV D TEMKIN H
Citation: A. Osinsky et al., LOW NOISE P-PI-N GAN ULTRAVIOLET PHOTODETECTORS, Applied physics letters, 71(16), 1997, pp. 2334-2336
TRANSPORT ANISOTROPY IN SPONTANEOUSLY ORDERED GAINP2 ALLOYS
Authors: CHERNYAK L OSINSKY A TEMKIN H MINTAIROV A MALKINA IG ZVONKOV BN SAFANOV YN
Citation: L. Chernyak et al., TRANSPORT ANISOTROPY IN SPONTANEOUSLY ORDERED GAINP2 ALLOYS, Applied physics letters, 70(18), 1997, pp. 2425-2427
SCHOTTKY-BARRIER DETECTORS ON GAN FOR VISIBLE-BLIND ULTRAVIOLET DETECTION
Authors: CHEN Q YANG JW OSINSKY A GANGOPADHYAY S LIM B ANWAR MZ KHAN MA KUKSENKOV D TEMKIN H
Citation: Q. Chen et al., SCHOTTKY-BARRIER DETECTORS ON GAN FOR VISIBLE-BLIND ULTRAVIOLET DETECTION, Applied physics letters, 70(17), 1997, pp. 2277-2279
MG-DOPED GREEN LIGHT-EMITTING-DIODES OVER CUBIC (111)MGAL2O4 SUBSTRATES
Authors: SUN CJ YANG JW LIM BW CHEN Q ANWAR MZ KHAN MA OSINSKY A TEMKIN H SCHETZINA JF
Citation: Cj. Sun et al., MG-DOPED GREEN LIGHT-EMITTING-DIODES OVER CUBIC (111)MGAL2O4 SUBSTRATES, Applied physics letters, 70(11), 1997, pp. 1444-1446
GROWTH MODES OF ZNSE ON GAAS
Authors: QIU Y OSINSKY A ELEMAWY AA LITTLEFIELD E TEMKIN H FALEEV N
Citation: Y. Qiu et al., GROWTH MODES OF ZNSE ON GAAS, Journal of applied physics, 79(2), 1996, pp. 1164-1166
EFFECT OF SULFUR DOPING ON OPTICAL ANISOTROPY OF CDSIAS2
Authors: OSINSKY A CHERNYAK L TEMKIN H WEN YC PARKINSON BA
Citation: A. Osinsky et al., EFFECT OF SULFUR DOPING ON OPTICAL ANISOTROPY OF CDSIAS2, Applied physics letters, 69(19), 1996, pp. 2867-2869
ELECTRON-BEAM-INDUCED CURRENT MEASUREMENTS OF MINORITY-CARRIER DIFFUSION LENGTH IN GALLIUM NITRIDE
Authors: CHERNYAK L OSINSKY A TEMKIN H YANG JW CHEN Q KHAN MA
Citation: L. Chernyak et al., ELECTRON-BEAM-INDUCED CURRENT MEASUREMENTS OF MINORITY-CARRIER DIFFUSION LENGTH IN GALLIUM NITRIDE, Applied physics letters, 69(17), 1996, pp. 2531-2533
CLEAVED CAVITY OPTICALLY PUMPED INGAN-GAN LASER GROWN ON SPINEL SUBSTRATES
Authors: KHAN MA SUN CJ YANG JW CHEN Q LIM BW ANWAR MZ OSINSKY A TEMKIN H
Citation: Ma. Khan et al., CLEAVED CAVITY OPTICALLY PUMPED INGAN-GAN LASER GROWN ON SPINEL SUBSTRATES, Applied physics letters, 69(16), 1996, pp. 2418-2420
SE SPECIES IN METALORGANIC MOLECULAR-BEAM EPITAXY OF ZNSE
Authors: QIU Y ELEMAWY AA OSINSKY A LITTLEFIELD E TEMKIN H
Citation: Y. Qiu et al., SE SPECIES IN METALORGANIC MOLECULAR-BEAM EPITAXY OF ZNSE, Applied physics letters, 68(23), 1996, pp. 3311-3313
NOVEL TECHNIQUE FOR P-TYPE DOPING OF ZNSE
Authors: ELEMAWY AA QIU Y OSINSKY A LITTLEFIELD E TEMKIN H
Citation: Aa. Elemawy et al., NOVEL TECHNIQUE FOR P-TYPE DOPING OF ZNSE, Applied physics letters, 67(9), 1995, pp. 1238-1240
Risultati: 1-22 |