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Results:
1-10
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Results: 10
Authors:
OSVALD J
BURIAN E
Citation: J. Osvald et E. Burian, C-V DEPENDENCE OF INHOMOGENEOUS SCHOTTKY DIODES, Solid-state electronics, 42(2), 1998, pp. 191-195
Authors:
LALINSKY T
BREZA J
VOGRINCIC P
OSVALD J
MOZOLOVA Z
SISOLAK J
Citation: T. Lalinsky et al., IRIDIUM-BASED MULTILAYER CONTACTS TO N-GAAS, Solid-state electronics, 42(2), 1998, pp. 205-210
Authors:
LALINSKY T
OSVALD J
MACHAJDIK D
MOZOLOVA Z
SISOLAK J
CONSTANTINIDIS G
KOBZEV AP
Citation: T. Lalinsky et al., HIGH-TEMPERATURE STABLE IR-AL N-GAAS SCHOTTKY DIODES - EFFECT OF THE BARRIER HEIGHT CONTROLLING/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(2), 1996, pp. 657-661
Authors:
OSVALD J
DOBROCKA E
Citation: J. Osvald et E. Dobrocka, GENERALIZED-APPROACH TO THE PARAMETER EXTRACTION FROM I-V CHARACTERISTICS OF SCHOTTKY DIODES, Semiconductor science and technology, 11(8), 1996, pp. 1198-1202
Authors:
DOBROCKA E
OSVALD J
Citation: E. Dobrocka et J. Osvald, INFLUENCE OF BARRIER HEIGHT DISTRIBUTION ON THE PARAMETERS OF SCHOTTKY DIODES - RESPONSE, Applied physics letters, 66(22), 1995, pp. 3069-3069
Authors:
ARISTOV VY
LELAY G
SOUKIASSIAN P
HRICOVINI K
BONNET JE
OSVALD J
OLSSON O
Citation: Vy. Aristov et al., CS-INDUCED HIGHEST E(F) JUMP ABOVE INAS(110) CONDUCTION-BAND MINIMUM, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(4), 1994, pp. 2709-2712
Authors:
ARISTOV VY
LELAY G
HRICOVINI K
TALEBIBRAHIMI A
DUMAS P
GUNTHER R
OSVALD J
INDLEKOFER G
Citation: Vy. Aristov et al., NEARLY COMPLETE TUNING OF THE FERMI-LEVEL POSITION AT A PROTOTYPICAL METAL-SILICON INTERFACE - LEAD ON UNPINNED SI(111)1X1-H, Journal of electron spectroscopy and related phenomena, 68, 1994, pp. 419-426
Authors:
ARISTOV VY
LELAY G
SOUKIASSIAN P
HRICOVINI K
BONNET JE
OSVALD J
OLSSON O
Citation: Vy. Aristov et al., ALKALI-METAL INDUCED HIGHEST FERMI-LEVEL PINNING POSITION ABOVE SEMICONDUCTOR CONDUCTION-BAND MINIMUM, Europhysics letters, 26(5), 1994, pp. 359-364
Authors:
DOBROCKA E
OSVALD J
Citation: E. Dobrocka et J. Osvald, INFLUENCE OF BARRIER HEIGHT DISTRIBUTION ON THE PARAMETERS OF SCHOTTKY DIODES, Applied physics letters, 65(5), 1994, pp. 575-577
Authors:
OSVALD J
LALINSKY T
Citation: J. Osvald et T. Lalinsky, BARRIER HEIGHT ENHANCEMENT IN WSIX GAAS SCHOTTKY DIODES BY RAPID THERMAL ANNEALING/, Journal of materials science. Materials in electronics, 4(4), 1993, pp. 267-270
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1-10
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