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Results: 10

Authors: WAN MF OU HJ LU W LIU XQ CHEN XS LI N LI N SHEN XC WANG WX HUANG Y ZHOU JM
Citation: Mf. Wan et al., INFRARED IMAGING BY 128X1 GAAS ALGAAS MQW INFRARED FPAS/, JOURNAL OF INFRARED AND MILLIMETER WAVES, 17(1), 1998, pp. 76-79

Authors: LIU K CHU JH WU LJ CAI Y GUO SL OU HJ ZHENG GZ TANG DY
Citation: K. Liu et al., MAGNETIC-FIELD-INDUCER CARRIER FREEZE-OUT IN NARROW-GAP SEMICONDUCTORS ANALYZED BY CAPACITANCE SPECTROSCOPY, Semiconductor science and technology, 12(4), 1997, pp. 406-408

Authors: YANG YF HSU CC OU HJ HUANG TC YANG ES
Citation: Yf. Yang et al., FABRICATION AND CHARACTERISTICS OF A GAINP GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR USING A SELECTIVE BURIED SUB-COLLECTOR/, I.E.E.E. transactions on electron devices, 44(12), 1997, pp. 2122-2127

Authors: OU HJ HSU CC YANG YF YANG ES
Citation: Hj. Ou et al., HIGH-FREQUENCY GAINP GAAS HETEROSTRUCTURE-EMITTER BIPOLAR-TRANSISTOR WITH TOW OFFSET VOLTAGE/, Electronics Letters, 33(8), 1997, pp. 714-716

Authors: HSU CC YANG YF OU HJ YANG ES LO HB
Citation: Cc. Hsu et al., CARBON-DOPED GAIN GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION USING NITROGEN AS THE CARRIER GAS/, Applied physics letters, 71(22), 1997, pp. 3248-3250

Authors: YANG YF HSU CC YANG ES OU HJ
Citation: Yf. Yang et al., A HIGH-FREQUENCY GAINP GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR WITH REDUCED BASE-COLLECTOR CAPACITANCE USING A SELECTIVE BURIED SUB-COLLECTOR/, IEEE electron device letters, 17(11), 1996, pp. 531-533

Authors: LIU K CHU JH WU LJ OU HJ TANG DY
Citation: K. Liu et al., POTENTIAL MODEL FOR THE SUBBAND STRUCTURES IN THE INVERSION LAYER OF NARROW-GAP SEMICONDUCTOR HETEROSTRUCTURES, Journal of applied physics, 79(7), 1996, pp. 3608-3610

Authors: HSU CC YANG YF OU HJ YANG ES
Citation: Cc. Hsu et al., CCL4-DOPED SEMIINSULATING INP AS A BUFFER LAYER IN GAINAS INP HIGH-ELECTRON-MOBILITY TRANSISTORS/, Applied physics letters, 69(8), 1996, pp. 1143-1144

Authors: LU W OU HJ CHEN MH HUANG XL SHEN SC GU RH YE LB
Citation: W. Lu et al., APPLICATION OF GAAS GAALAS MULTIPLE-QUANTUM-WELL INFRARED DETECTOR ARRAY IN THE INFRARED IMAGING CAMERA/, International journal of infrared and millimeter waves, 15(1), 1994, pp. 137-144

Authors: LIU K CHU JH OU HJ TANG DY
Citation: K. Liu et al., HOLE SUBBAND IN P-TYPE CHANNEL OF SEMICONDUCTOR HETEROSTRUCTURES, Journal of applied physics, 76(12), 1994, pp. 7998-8000
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