AAAAAA

   
Results: 1-13 |
Results: 13
RELIABILITY OF NITRIDED WET SILICON DIOXIDE THIN-FILMS IN WSI2 OR TASI2 POLYCIDE PROCESS - INFLUENCE OF THE NITRIDATION TEMPERATURE
Authors: YCKACHE K BOIVIN P BAIGET F RADJAA S AURIEL G SAGNES B OUALID J GLACHANT A
Citation: K. Yckache et al., RELIABILITY OF NITRIDED WET SILICON DIOXIDE THIN-FILMS IN WSI2 OR TASI2 POLYCIDE PROCESS - INFLUENCE OF THE NITRIDATION TEMPERATURE, Microelectronics and reliability, 38(6-8), 1998, pp. 937-942
ELECTRON TRAPS CREATED IN GATE OXIDES BY FOWLER-NORDHEIM INJECTIONS
Authors: AURIEL G OUALID J VUILLAUME D
Citation: G. Auriel et al., ELECTRON TRAPS CREATED IN GATE OXIDES BY FOWLER-NORDHEIM INJECTIONS, Microelectronics and reliability, 38(2), 1998, pp. 227-231
NEW INSIGHTS ON THE CHARGING AND DISCHARGING OF ELECTRON TRAPS CREATED BY HOMOGENEOUS ELECTRON INJECTION IN GATE OXIDE
Authors: AURIEL G DUBUC JP SAGNES B OUALID J VUILLAUME D
Citation: G. Auriel et al., NEW INSIGHTS ON THE CHARGING AND DISCHARGING OF ELECTRON TRAPS CREATED BY HOMOGENEOUS ELECTRON INJECTION IN GATE OXIDE, Microelectronic engineering, 36(1-4), 1997, pp. 309-312
METHODS TO DETERMINE ELECTRON TRAPS CREATED IN GATE OXIDES BY FOWLER-NORDHEIM INJECTION
Authors: AURIEL G DUBUC JP SAGNES B OUALID J
Citation: G. Auriel et al., METHODS TO DETERMINE ELECTRON TRAPS CREATED IN GATE OXIDES BY FOWLER-NORDHEIM INJECTION, Journal of non-crystalline solids, 220(2-3), 1997, pp. 157-163
RELAXATION OF THE SPACE-CHARGE CREATED BY FOWLER-NORDHEIM INJECTIONS IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS
Authors: SAGNES B MORAGUES JM YCKACHE K JERISIAN R OUALID J VUILLAUME D
Citation: B. Sagnes et al., RELAXATION OF THE SPACE-CHARGE CREATED BY FOWLER-NORDHEIM INJECTIONS IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS, Journal of applied physics, 80(9), 1996, pp. 5469-5477
EXPERIMENTS AND MODELING TO DETERMINE TRAPPED HOLES AND SLOW STATES IN FOWLER-NORDHEIM STRESSED MOS CAPACITORS
Authors: MORAGUES JM SAGNES B YCKACHE K JERISIAN R OUALID J VUILLAUME D
Citation: Jm. Moragues et al., EXPERIMENTS AND MODELING TO DETERMINE TRAPPED HOLES AND SLOW STATES IN FOWLER-NORDHEIM STRESSED MOS CAPACITORS, Microelectronic engineering, 28(1-4), 1995, pp. 329-332
MOS CAPACITOR HOLDING TIME AND DIFFUSION LENGTH AT DRAM REFRESH TEST TEMPERATURE
Authors: BOUHDADA A OUALID J
Citation: A. Bouhdada et J. Oualid, MOS CAPACITOR HOLDING TIME AND DIFFUSION LENGTH AT DRAM REFRESH TEST TEMPERATURE, Microelectronics, 26(5), 1995, pp. 405-412
INFLUENCE OF FN ELECTRON INJECTIONS IN DRY AND DRY WET DRY GATE OXIDES - RELATION WITH FAILURE
Authors: CIANTAR E BOIVIN P BURLE M NIEL C MORAGUES JM SAGNES B JERISIAN R OUALID J
Citation: E. Ciantar et al., INFLUENCE OF FN ELECTRON INJECTIONS IN DRY AND DRY WET DRY GATE OXIDES - RELATION WITH FAILURE, Journal of non-crystalline solids, 187, 1995, pp. 144-148
INFLUENCE OF WSI2 POLYSILICIDE GATE PROCESS ON INTEGRITY AND RELIABILITY OF GATE AND TUNNEL OXIDES
Authors: MORAGUES JM SAGNES B JERISIAN R OUALID J CIANTAR E LIOTARD JL MERENDA P
Citation: Jm. Moragues et al., INFLUENCE OF WSI2 POLYSILICIDE GATE PROCESS ON INTEGRITY AND RELIABILITY OF GATE AND TUNNEL OXIDES, Journal of non-crystalline solids, 187, 1995, pp. 156-159
SURFACE-POTENTIAL DETERMINATION IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS
Authors: MORAGUES JM CIANTAR E JERISIAN R SAGNES B OUALID J
Citation: Jm. Moragues et al., SURFACE-POTENTIAL DETERMINATION IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS, Journal of applied physics, 76(9), 1994, pp. 5278-5287
HOT-CARRIER EFFECTS ON LEAKAGE CURRENTS IN MOSFETS - MODELING AND EXPERIMENT
Authors: OUALID J BURGNIARD S CIANTAR E JERISIAN R
Citation: J. Oualid et al., HOT-CARRIER EFFECTS ON LEAKAGE CURRENTS IN MOSFETS - MODELING AND EXPERIMENT, Microelectronics and reliability, 33(11-12), 1993, pp. 1759-1777
EFFECTS OF HIGH-FIELD ELECTRON INJECTION INTO THE GATE OXIDE OF P-CHANNEL METAL-OXIDE-SEMICONDUCTOR TRANSISTORS
Authors: MORAGUES JM OUALID J JERISIAN R CIANTAR E
Citation: Jm. Moragues et al., EFFECTS OF HIGH-FIELD ELECTRON INJECTION INTO THE GATE OXIDE OF P-CHANNEL METAL-OXIDE-SEMICONDUCTOR TRANSISTORS, Journal of applied physics, 74(8), 1993, pp. 5078-5085
CORRELATION OF THE LEAKAGE CURRENT AND CHARGE PUMPING IN SILICON-ON-INSULATOR GATE-CONTROLLED DIODES
Authors: SEGHIR H CRISTOLOVEANU S JERISIAN R OUALID J AUBERTONHERVE AJ
Citation: H. Seghir et al., CORRELATION OF THE LEAKAGE CURRENT AND CHARGE PUMPING IN SILICON-ON-INSULATOR GATE-CONTROLLED DIODES, I.E.E.E. transactions on electron devices, 40(6), 1993, pp. 1104-1111
Risultati: 1-13 |