Authors:
Olafsen, LJ
Daniels-Race, T
Kendall, RE
Teitsworth, SW
Citation: Lj. Olafsen et al., Photoluminescence of n-i-n GaAs/AlAs single quantum well structures under electric field bias, SUPERLATT M, 27(1), 2000, pp. 39-51
Authors:
Bewley, WW
Felix, CL
Aifer, EH
Stokes, DW
Vurgaftman, I
Olafsen, LJ
Meyer, JR
Yang, MJ
Lee, H
Citation: Ww. Bewley et al., Thermal characterization of diamond-pressure-bond heat sinking for optically pumped mid-infrared lasers, IEEE J Q EL, 35(11), 1999, pp. 1597-1601
Authors:
Lee, H
Olafsen, LJ
Menna, RJ
Bewley, WW
Martinelli, RU
Vurgaftman, I
Garbuzov, DZ
Felix, CL
Maiorov, M
Meyer, JR
Connolly, JC
Sugg, AR
Olsen, GH
Citation: H. Lee et al., Room-temperature type-II W quantum well diode laser with broadened waveguide emitting at lambda=3.30 mu m, ELECTR LETT, 35(20), 1999, pp. 1743-1745
Authors:
Bewley, WW
Felix, CL
Vurgaftman, I
Stokes, DW
Aifer, EH
Olafsen, LJ
Meyer, JR
Yang, MJ
Shanabrook, BV
Lee, H
Martinelli, RU
Sugg, AR
Citation: Ww. Bewley et al., High-temperature continuous-wave 3-6.1 mu m "W'' lasers with diamond-pressure-bond heat sinking, APPL PHYS L, 74(8), 1999, pp. 1075-1077
Authors:
Felix, CL
Bewley, WW
Vurgaftman, I
Meyer, JR
Goldberg, L
Aifer, EH
Olafsen, LJ
Chow, DH
Selvig, E
Lin, CH
Murry, SJ
Zhang, D
Pei, SS
Citation: Cl. Felix et al., High-temperature type-II superlattice diode laser at lambda=2.9 mu m (vol 71, pg 3607, 1997), APPL PHYS L, 74(4), 1999, pp. 628-629