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Results: 1-25/40
Authors:
Ho, YW
Ng, V
Choi, WK
Ng, SP
Osipowicz, T
Seng, HL
Tjui, WW
Li, K
Citation: Yw. Ho et al., Characterisation of Ge nanocrystals in co-sputtered Ge+SiO2 system using Raman spectroscopy, RBS and TEM, SCR MATER, 44(8-9), 2001, pp. 1291-1295
Authors:
Rusli,"Yoon, SF
Huang, QF
Ahn, J
Zhang, Q
Yang, H
Wu, YS
Teo, EJ
Osipowicz, T
Watt, F
Citation: Sf. Rusli,"yoon et al., Metal-containing amorphous carbon film development using electron cyclotron resonance CVD, DIAM RELAT, 10(2), 2001, pp. 132-138
Authors:
Latt, KM
Lee, YK
Li, S
Osipowicz, T
Seng, HL
Citation: Km. Latt et al., The impact of layer thickness of IMP-deposited tantalum nitride films on integrity of Cu/TaN/SiO2/Si multilayer structure, MAT SCI E B, 84(3), 2001, pp. 217-223
Authors:
Latt, KM
Lee, K
Osipowicz, T
Lee, YK
Citation: Km. Latt et al., Properties of electroplated copper thin film and its interfacial reactionsin the EPCu/IMPCu/IMPTaN/SiO2/Si multilayer structure, MAT SCI E B, 83(1-3), 2001, pp. 1-7
Authors:
Teo, EJ
Osipowicz, T
Bettiol, AA
Watt, F
Hao, MS
Chua, SJ
Citation: Ej. Teo et al., Channeling contrast microscopy on lateral epitaxial overgrown GaN, NUCL INST B, 181, 2001, pp. 231-237
Authors:
Osipowicz, T
Zmeck, M
Watt, F
Fiege, G
Balk, L
Niedernostheide, F
Schulze, HJ
Citation: T. Osipowicz et al., IBIC analysis of high-power devices, NUCL INST B, 181, 2001, pp. 311-314
Authors:
Seng, HL
Osipowicz, T
Lee, PS
Mangelinck, D
Sum, TC
Watt, F
Citation: Hl. Seng et al., Micro-RBS study of nickel silicide formation, NUCL INST B, 181, 2001, pp. 399-403
Authors:
Natarajan, A
Bera, LK
Choi, WK
Osipowicz, T
Seng, HL
Citation: A. Natarajan et al., Rapid thermal oxidation of radio frequency sputtered polycrystalline Si1-xGex thin films, SOL ST ELEC, 45(11), 2001, pp. 1957-1961
Authors:
Zmeck, M
Phang, J
Bettiol, A
Osipowicz, T
Watt, F
Balk, L
Niedernostheide, FJ
Schulze, HJ
Falck, E
Citation: M. Zmeck et al., Analysis of high-power devices using proton beam induced charge microscopy, MICROEL REL, 41(9-10), 2001, pp. 1519-1524
Authors:
Latt, KM
Lee, YK
Seng, HL
Osipowicz, T
Citation: Km. Latt et al., Diffusion barrier properties of ionized metal plasma deposited tantalum nitride thin films between copper and silicon dioxide, J MATER SCI, 36(24), 2001, pp. 5845-5851
Authors:
Latt, KM
Sher-Yi, C
Osipowicz, T
Lee, K
Lee, YK
Citation: Km. Latt et al., Comparative study of copper films prepared by ionized metal plasma sputtering and chemical vapor deposition in the Cu/TaN/SiO2/Si multilayer structure, J MATER SCI, 36(23), 2001, pp. 5705-5712
Authors:
Cui, J",Rusli,"Yoon, SF
Yu, MB
Chew, K
Ahn, J
Zhang, Q
Teo, EJ
Osipowicz, T
Watt, F
Citation: Sf. Cui, J",rusli,"yoon et al., Effects of microwave power on the structural and emission properties of hydrogenated amorphous silicon carbide deposited by electron cyclotron resonance chemical vapor deposition, J APPL PHYS, 89(5), 2001, pp. 2699-2705
Authors:
Cui, J",Rusli,"Yoon, SF
Teo, EJ
Yu, MB
Chew, K
Ahn, J
Zhang, Q
Osipowicz, T
Watt, F
Citation: Sf. Cui, J",rusli,"yoon et al., Effect of radio-frequency bias voltage on the optical and structural properties of hydrogenated amorphous silicon carbide, J APPL PHYS, 89(11), 2001, pp. 6153-6158
Authors:
Lee, YK
Latt, KM
Osipowicz, T
Sher-Yi, C
Citation: Yk. Lee et al., Study of diffusion barrier properties of ternary alloy (TixAlyNz) in Cu/TixAlyNz/SiO2/Si thin film structure, MAT SC S PR, 3(3), 2000, pp. 191-194
Authors:
Lee, PS
Mangelinck, D
Pey, KL
Shen, ZX
Ding, J
Osipowicz, T
See, A
Citation: Ps. Lee et al., Micro-Raman spectroscopy investigation of nickel silicides and nickel (platinum) silicides, EL SOLID ST, 3(3), 2000, pp. 153-155
Authors:
van Kan, JA
Sanchez, JL
Osipowicz, T
Watt, F
Citation: Ja. Van Kan et al., Proton micromachining: a new technique for the production of three-dimensional microstructures, MICROSYST T, 6(3), 2000, pp. 82-85
Authors:
Lee, YK
Latt, KM
Jaehyung, K
Osipowicz, T
Sher-Yi, C
Lee, K
Citation: Yk. Lee et al., Comparative analysis and study of ionized metal plasma (IMP)-Cu and chemical vapor deposition (CVD)-Cu on diffusion barrier properties of IMP-TaN on SiO2, MAT SCI E B, 77(3), 2000, pp. 282-287
Authors:
Lee, YK
Latt, KM
Li, S
Osipowicz, T
Chiam, SY
Citation: Yk. Lee et al., Characterization of interfacial reactions between ionized metal plasma deposited Al-0.5 wt.% Cu and Ti on SiO2, MAT SCI E B, 77(1), 2000, pp. 101-105
Authors:
Watt, F
van Kan, JA
Osipowicz, T
Citation: F. Watt et al., Three dimensional microfabrication using maskless irradiation with MeV ionbeams: Proton-beam micromachining, MRS BULL, 25(2), 2000, pp. 33-38
Authors:
Osipowicz, T
van Kan, JA
Sum, TC
Sanchez, JL
Watt, F
Citation: T. Osipowicz et al., The use of proton microbeams for the production of microcomponents, NUCL INST B, 161, 2000, pp. 83-89
Authors:
van Kan, JA
Sum, TC
Osipowicz, T
Watt, F
Citation: Ja. Van Kan et al., Sub 100 nm proton beam micromachining: theoretical calculations on resolution limits, NUCL INST B, 161, 2000, pp. 366-370
Authors:
Tomcik, B
Osipowicz, T
Lee, JY
Citation: B. Tomcik et al., Diamond-like film as a corrosion protective layer on the hard disk, THIN SOL FI, 360(1-2), 2000, pp. 173-180
Authors:
Zmeck, M
Osipowicz, T
Watt, F
Niedernostheide, F
Schulze, HJ
Fiege, GBM
Balk, L
Citation: M. Zmeck et al., Analysis of high-power devices using proton beam induced currents, MICROEL REL, 40(8-10), 2000, pp. 1413-1418
Authors:
Lee, YK
Latt, KM
Jaehyung, K
Osipowicz, T
Chiam, SY
Lee, K
Citation: Yk. Lee et al., Study of interfacial reactions in ionized metal plasma (IMP) deposited Al-0.5%wt Cu/Ti/SiO2/Si structure, J MATER SCI, 35(23), 2000, pp. 5857-5860
Authors:
Rusli,"Yoon, SF
Huang, QF
Yang, H
Yu, MB
Ahn, J
Zhang, Q
Teo, EJ
Osipowicz, T
Watt, F
Citation: Sf. Rusli,"yoon et al., Investigation of molybdenum-carbon films (Mo-C : H) deposited using an electron cyclotron resonance chemical vapor deposition system, J APPL PHYS, 88(6), 2000, pp. 3699-3704