Authors: Lysenko, VS Tyagulskii, IP Osiyuk, IN Nazarov, AN Vovk, YN Gomenyuk, YV Terukov, EI Kon'kov, OI

Citation: Vs. Lysenko et al., Effect of erbium on electronic traps in PECVD-grown a-Si : H(Er)/c-Si structures, SEMICONDUCT, 35(6), 2001, pp. 621-626

Authors: Lysenko, VS Nazarov, AN Kilchytska, VI Osiyuk, IN Tyagulski, IP Gomeniuk, YV Barchuk, IP

Citation: Vs. Lysenko et al., Thermally activated processes in the buried oxide of SIMOX SOI structures and devices, SOL ST ELEC, 45(4), 2001, pp. 575-584

Authors: Olafsson, HO Sveinbjornsson, EO Rudenko, TE Tyagulski, IP Osiyuk, IN Lysenko, VS

Citation: Ho. Olafsson et al., Border traps in 6H-SiC metal-oxide-semiconductor capacitors investigated by the thermally-stimulated current technique, APPL PHYS L, 79(24), 2001, pp. 4034-4036

Authors: Lysenko, VS Tyagulski, IP Gomeniuk, YV Osiyuk, IN

Citation: Vs. Lysenko et al., Effect of oxide-semiconductor interface traps on low-temperature operationof MOSFETs, MICROEL REL, 40(4-5), 2000, pp. 735-738

Authors: Lysenko, VS Tyagulski, IP Gomeniuk, YV Osiyuk, IN

Citation: Vs. Lysenko et al., Effect of traps in the transition Si/SiO2 layer on input characteristics of SOI transistors, MICROEL REL, 40(4-5), 2000, pp. 799-802

Authors: Lysenko, VS Tyagulski, IP Gomeniuk, YV Osiyuk, IN Mikhnov, AK

Citation: Vs. Lysenko et al., Electrical characterization of the amorphous SiC-pSi structure, MICROEL ENG, 48(1-4), 1999, pp. 265-268