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Results:
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Results: 10
Authors:
Said, M
Ben Zid, F
Bertoni, CM
Ossicini, S
Citation: M. Said et al., First-principles electronic structure of rare-earth arsenides, EUR PHY J B, 23(2), 2001, pp. 191-199
Authors:
Degoli, E
Ossicini, S
Citation: E. Degoli et S. Ossicini, Role of defects in Si/SiO2 quantum wells, OPT MATER, 17(1-2), 2001, pp. 95-98
Authors:
Magri, R
Ossicini, S
Citation: R. Magri et S. Ossicini, In-plane anisotropy of the optical properties of (In0.5Ga0.5As)(n)/(InP)(n) superlattices - art. no. 165303, PHYS REV B, 6316(16), 2001, pp. 5303
Authors:
Degoli, E
Ossicini, S
Barbato, D
Luppi, M
Pettenati, E
Citation: E. Degoli et al., Symmetry and passivation dependence of the optical properties of nanocrystalline silicon structures, MAT SCI E B, 69, 2000, pp. 444-448
Authors:
Bisi, O
Ossicini, S
Pavesi, L
Citation: O. Bisi et al., Porous silicon: a quantum sponge structure for silicon based optoelectronics, SURF SCI R, 38(1-3), 2000, pp. 5-126
Authors:
Degoli, E
Ossicini, S
Citation: E. Degoli et S. Ossicini, The electronic and optical properties of Si/SiO2 superlattices: role of confined and defect states, SURF SCI, 470(1-2), 2000, pp. 32-42
Authors:
Degoli, E
Luppi, M
Ossicini, S
Citation: E. Degoli et al., From undulating Si quantum wires to Si quantum dots: A model for porous silicon, PHYS ST S-A, 182(1), 2000, pp. 301-306
Authors:
Magri, R
Ossicini, S
Citation: R. Magri et S. Ossicini, Ab-initio investigation of the polarization anisotropy of the optical absorption in (InGa)As-InP superlattices, PHYS ST S-A, 170(2), 1998, pp. 331-336
Authors:
Ossicini, S
Citation: S. Ossicini, Optical properties of confined Si structures, PHYS ST S-A, 170(2), 1998, pp. 377-390
Authors:
Degoli, E
Ossicini, S
Citation: E. Degoli et S. Ossicini, Optical properties of Si/CaF2 superlattices, J LUMINESC, 80(1-4), 1998, pp. 411-415
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