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Results: 1-11 |
Results: 11
POSTIMPLANTATION ANNEALING OF SIC STUDIED BY SLOW-POSITRON SPECTROSCOPIES
Authors: BRAUER G ANWAND W COLEMAN PG STORMER J PLAZAOLA F CAMPILLO JM PACAUD Y SKORUPA W
Citation: G. Brauer et al., POSTIMPLANTATION ANNEALING OF SIC STUDIED BY SLOW-POSITRON SPECTROSCOPIES, Journal of physics. Condensed matter, 10(5), 1998, pp. 1147-1156
AN EPR STUDY OF DEFECTS INDUCED IN 6H-SIC BY ION-IMPLANTATION
Authors: BARKLIE RC COLLINS M HOLM B PACAUD Y SKORUPA W
Citation: Rc. Barklie et al., AN EPR STUDY OF DEFECTS INDUCED IN 6H-SIC BY ION-IMPLANTATION, Journal of electronic materials, 26(3), 1997, pp. 137-143
ANALYSIS OF ION-BEAM-INDUCED DAMAGE AND AMORPHIZATION OF 6H-SIC BY RAMAN-SCATTERING
Authors: PEREZRODRIGUEZ A PACAUD Y CALVOBARRIO L SERRE C SKORUPA W MORANTE JR
Citation: A. Perezrodriguez et al., ANALYSIS OF ION-BEAM-INDUCED DAMAGE AND AMORPHIZATION OF 6H-SIC BY RAMAN-SCATTERING, Journal of electronic materials, 25(3), 1996, pp. 541-547
AN INFRARED STUDY OF GE+ IMPLANTED SIC
Authors: ZORBA TT MITSAS CL SIAPKAS ID TERZAKIS GZ SIAPKAS DI PACAUD Y SKORUPA W
Citation: Tt. Zorba et al., AN INFRARED STUDY OF GE+ IMPLANTED SIC, Applied surface science, 102, 1996, pp. 120-124
ION-BEAM PROCESSING OF SINGLE-CRYSTALLINE SILICON-CARBIDE
Authors: SKORUPA W HEERA V PACAUD Y WEISHART H
Citation: W. Skorupa et al., ION-BEAM PROCESSING OF SINGLE-CRYSTALLINE SILICON-CARBIDE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 114-120
RADIATION-DAMAGE AND ANNEALING BEHAVIOR OF GE-IMPLANTED SIC()
Authors: PACAUD Y STOEMENOS J BRAUER G YANKOV RA HEERA V VOELSKOW M KOGLER R SKORUPA W
Citation: Y. Pacaud et al., RADIATION-DAMAGE AND ANNEALING BEHAVIOR OF GE-IMPLANTED SIC(), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 177-180
MICROSTRUCTURAL CHARACTERIZATION OF AMORPHIZED AND RECRYSTALLIZED 6H-SIC
Authors: PACAUD Y SKORUPA W STOEMENOS J
Citation: Y. Pacaud et al., MICROSTRUCTURAL CHARACTERIZATION OF AMORPHIZED AND RECRYSTALLIZED 6H-SIC, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 181-185
INVESTIGATION OF THE DAMAGE-INDUCED BY 200 KEV GE-IMPLANTATION IN 6H-SIC( ION)
Authors: PACAUD Y SKORUPA W PEREZRODRIGUEZ A BRAUER G STOEMENOS J BARKLIE RC
Citation: Y. Pacaud et al., INVESTIGATION OF THE DAMAGE-INDUCED BY 200 KEV GE-IMPLANTATION IN 6H-SIC( ION), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 321-324
POSITRON STUDIES OF DEFECTS IN ION-IMPLANTED SIC
Authors: BRAUER G ANWAND W COLEMAN PG KNIGHTS AP PLAZAOLA F PACAUD Y SKORUPA W STORMER J WILLUTZKI P
Citation: G. Brauer et al., POSITRON STUDIES OF DEFECTS IN ION-IMPLANTED SIC, Physical review. B, Condensed matter, 54(5), 1996, pp. 3084-3092
ION-BEAM SYNTHESIS OF AMORPHOUS SIC FILMS - STRUCTURAL-ANALYSIS AND RECRYSTALLIZATION
Authors: SERRE C CALVOBARRIO L PEREZRODRIGUEZ A ROMANORODRIGUEZ A MORANTE JR PACAUD Y KOGLER R HEERA V SKORUPA W
Citation: C. Serre et al., ION-BEAM SYNTHESIS OF AMORPHOUS SIC FILMS - STRUCTURAL-ANALYSIS AND RECRYSTALLIZATION, Journal of applied physics, 79(9), 1996, pp. 6907-6913
SPECTROSCOPIC STUDIES OF BN FILMS DEPOSITED BY DYNAMIC ION MIXING
Authors: RIVIERE JP PACAUD Y CAHOREAU M
Citation: Jp. Riviere et al., SPECTROSCOPIC STUDIES OF BN FILMS DEPOSITED BY DYNAMIC ION MIXING, Thin solid films, 227(1), 1993, pp. 44-53
Risultati: 1-11 |