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Results: 1-25 | 26-40
Results: 1-25/40
MICROSCOPIC ANALYSIS OF SHOT-NOISE SUPPRESSION IN NONDEGENERATE BALLISTIC TRANSPORT
Authors: GONZALEZ T MATEOS J PARDO D BULASHENKO OM REGGIANI L
Citation: T. Gonzalez et al., MICROSCOPIC ANALYSIS OF SHOT-NOISE SUPPRESSION IN NONDEGENERATE BALLISTIC TRANSPORT, Semiconductor science and technology, 13(7), 1998, pp. 714-724
ELECTRON-NUMBER STATISTICS AND SHOT-NOISE SUPPRESSION BY COULOMB CORRELATION IN NONDEGENERATE BALLISTIC TRANSPORT
Authors: BULASHENKO OM MATEOS J PARDO D GONZALEZ T REGGIANI L RUBI JM
Citation: Om. Bulashenko et al., ELECTRON-NUMBER STATISTICS AND SHOT-NOISE SUPPRESSION BY COULOMB CORRELATION IN NONDEGENERATE BALLISTIC TRANSPORT, Physical review. B, Condensed matter, 57(3), 1998, pp. 1366-1369
ACCELERATION FLUCTUATION SCHEME FOR DIFFUSION NOISE SOURCES WITHIN A GENERALIZED IMPEDANCE FIELD METHOD
Authors: SHIKTOROV P STARIKOV E GRUZINSKIS V REGGIANI L GONZALEZ T MATEOS J PARDO D VARANI L
Citation: P. Shiktorov et al., ACCELERATION FLUCTUATION SCHEME FOR DIFFUSION NOISE SOURCES WITHIN A GENERALIZED IMPEDANCE FIELD METHOD, Physical review. B, Condensed matter, 57(19), 1998, pp. 11866-11869
NOISE-ANALYSIS OF 0.1 MU-M GATE MESFETS AND HEMTS
Authors: MATEOS J GONZALEZ T PARDO D TADYSZAK P DANNEVILLE F CAPPY A
Citation: J. Mateos et al., NOISE-ANALYSIS OF 0.1 MU-M GATE MESFETS AND HEMTS, Solid-state electronics, 42(1), 1998, pp. 79-85
UNIVERSALITY OF THE 1 3 SHOT-NOISE SUPPRESSION FACTOR IN NONDEGENERATE DIFFUSIVE CONDUCTORS/
Authors: GONZALEZ T GONZALEZ C MATEOS J PARDO D REGGIANI L BULASHENKO OM RUBI JM
Citation: T. Gonzalez et al., UNIVERSALITY OF THE 1 3 SHOT-NOISE SUPPRESSION FACTOR IN NONDEGENERATE DIFFUSIVE CONDUCTORS/, Physical review letters, 80(13), 1998, pp. 2901-2904
TRANSFER IMPEDANCE CALCULATIONS OF ELECTRONIC NOISE IN 2-TERMINAL SEMICONDUCTOR STRUCTURES
Authors: STARIKOV E SHIKTOROV P GRUZINSKIS V VARANI L VAISSIERE JC NOUGIER JP GONZALEZ T MATEOS J PARDO D REGGIANI L
Citation: E. Starikov et al., TRANSFER IMPEDANCE CALCULATIONS OF ELECTRONIC NOISE IN 2-TERMINAL SEMICONDUCTOR STRUCTURES, Journal of applied physics, 83(4), 1998, pp. 2052-2066
INFLUENCE OF AL MOLE FRACTION ON THE NOISE PERFORMANCE OF GAAS ALXGA1-XAS, HEMTS/
Authors: MATEOS J PARDO D GONZALEZ T TADYSZAK P DANNEVILLE F CAPPY A
Citation: J. Mateos et al., INFLUENCE OF AL MOLE FRACTION ON THE NOISE PERFORMANCE OF GAAS ALXGA1-XAS, HEMTS/, I.E.E.E. transactions on electron devices, 45(9), 1998, pp. 2081-2083
BOHM TRAJECTORIES FOR THE MONTE-CARLO SIMULATION OF QUANTUM-BASED DEVICES
Authors: ORIOLS X GARCIAGARCIA JJ MARTIN F SUNE J GONZALEZ T MATEOS J PARDO D
Citation: X. Oriols et al., BOHM TRAJECTORIES FOR THE MONTE-CARLO SIMULATION OF QUANTUM-BASED DEVICES, Applied physics letters, 72(7), 1998, pp. 806-808
QUANTUM MONTE-CARLO SIMULATION OF TUNNELING DEVICES USING BOHM TRAJECTORIES
Authors: ORIOLS X GARCIAGARCIA JJ MARTIN F SUNE J GONZALEZ T MATEOS J PARDO D
Citation: X. Oriols et al., QUANTUM MONTE-CARLO SIMULATION OF TUNNELING DEVICES USING BOHM TRAJECTORIES, Physica status solidi. b, Basic research, 204(1), 1997, pp. 404-407
NOISE SUPPRESSION IN MESOSCOPIC STRUCTURES DUE TO LONG-RANGE COULOMB INTERACTION
Authors: GONZALEZ T BULASHENKO OM MATEOS J PARDO D REGGIANI L RUBI JM
Citation: T. Gonzalez et al., NOISE SUPPRESSION IN MESOSCOPIC STRUCTURES DUE TO LONG-RANGE COULOMB INTERACTION, Physica status solidi. b, Basic research, 204(1), 1997, pp. 450-452
STUDY OF CURRENT-MODE NOISE OF SI1-XGEX SI STRAINED HETEROJUNCTIONS/
Authors: MARTIN MJ PARDO D VELAZQUEZ JE
Citation: Mj. Martin et al., STUDY OF CURRENT-MODE NOISE OF SI1-XGEX SI STRAINED HETEROJUNCTIONS/, Physica status solidi. b, Basic research, 204(1), 1997, pp. 462-465
NOISE SUPPRESSION DUE TO LONG-RANGE COULOMB INTERACTION - CROSSOVER BETWEEN DIFFUSIVE AND BALLISTIC TRANSPORT REGIMES
Authors: GONZALEZ T BULASHENKO OM MATEOS J PARDO D REGGIANI L RUBI JM
Citation: T. Gonzalez et al., NOISE SUPPRESSION DUE TO LONG-RANGE COULOMB INTERACTION - CROSSOVER BETWEEN DIFFUSIVE AND BALLISTIC TRANSPORT REGIMES, Semiconductor science and technology, 12(8), 1997, pp. 1053-1056
HOT-CARRIER THERMAL-CONDUCTIVITY FROM THE SIMULATION OF SUBMICRON SEMICONDUCTOR STRUCTURES
Authors: GOLINELLI P BRUNETTI R VARANI L VAISSIERE JC NOUGIER JP REGGIANI L STARIKOV E SHIKTOROV P GRUZINSKIS V GONZALEZ T MARTIN MJ PARDO D
Citation: P. Golinelli et al., HOT-CARRIER THERMAL-CONDUCTIVITY FROM THE SIMULATION OF SUBMICRON SEMICONDUCTOR STRUCTURES, Semiconductor science and technology, 12(11), 1997, pp. 1511-1513
BOHM TRAJECTORIES FOR THE MODELING OF TUNNELING DEVICES
Authors: SUNE J ORIOLS X GARCIAGARCIA JJ MARTIN F GONZALEZ T MATEOS J PARDO D
Citation: J. Sune et al., BOHM TRAJECTORIES FOR THE MODELING OF TUNNELING DEVICES, Microelectronic engineering, 36(1-4), 1997, pp. 125-128
EFFECT OF LONG-RANGE COULOMB INTERACTION ON SHOT-NOISE SUPPRESSION INBALLISTIC TRANSPORT
Authors: GONZALEZ T BULASHENKO OM MATEOS J PARDO D REGGIANI L
Citation: T. Gonzalez et al., EFFECT OF LONG-RANGE COULOMB INTERACTION ON SHOT-NOISE SUPPRESSION INBALLISTIC TRANSPORT, Physical review. B, Condensed matter, 56(11), 1997, pp. 6424-6427
MONTE-CARLO ANALYSIS OF ELECTRONIC NOISE IN SEMICONDUCTOR-MATERIALS AND DEVICES
Authors: REGGIANI L GOLINELLI P VARANI L GONZALEZ T PARDO D STARIKOV E SHIKTOROV P GRUZINSKIS V
Citation: L. Reggiani et al., MONTE-CARLO ANALYSIS OF ELECTRONIC NOISE IN SEMICONDUCTOR-MATERIALS AND DEVICES, Microelectronics, 28(2), 1997, pp. 183-198
MICROSCOPIC ANALYSIS OF ELECTRON NOISE IN GAAS SCHOTTKY-BARRIER DIODES
Authors: GONZALEZ T PARDO D REGGIANI L VARANI L
Citation: T. Gonzalez et al., MICROSCOPIC ANALYSIS OF ELECTRON NOISE IN GAAS SCHOTTKY-BARRIER DIODES, Journal of applied physics, 82(5), 1997, pp. 2349-2358
NOISE AND TRANSIT-TIME IN UNGATED FET STRUCTURES
Authors: MATEOS J GONZALEZ T PARDO D TADYSZAK P DANNEVILLE F CAPPY A
Citation: J. Mateos et al., NOISE AND TRANSIT-TIME IN UNGATED FET STRUCTURES, I.E.E.E. transactions on electron devices, 44(12), 1997, pp. 2128-2135
ANALYSIS OF VOLTAGE NOISE IN FORWARD-BIASED SILICON BIPOLAR HOMOJUNCTIONS - LOW-INJECTION AND HIGH-INJECTION REGIMES
Authors: MARTIN MJ PARDO D VELAZQUEZ JE
Citation: Mj. Martin et al., ANALYSIS OF VOLTAGE NOISE IN FORWARD-BIASED SILICON BIPOLAR HOMOJUNCTIONS - LOW-INJECTION AND HIGH-INJECTION REGIMES, Applied physics letters, 71(23), 1997, pp. 3382-3384
ON THE SPECTRAL STRENGTH OF THE NOISE SOURCE ENTERING THE TRANSFER IMPEDANCE METHOD
Authors: SHIKTOROV P GRUZINSKIS V STARIKOV E GONZALEZ T MATEOS J PARDO D REGGIANI L VARANI L
Citation: P. Shiktorov et al., ON THE SPECTRAL STRENGTH OF THE NOISE SOURCE ENTERING THE TRANSFER IMPEDANCE METHOD, Applied physics letters, 71(21), 1997, pp. 3093-3095
MONTE-CARLO ANALYSIS OF A SCHOTTKY DIODE WITH AN AUTOMATIC SPACE-VARIABLE CHARGE ALGORITHM
Authors: MARTIN MJ GONZALEZ T PARDO D VELAZQUEZ JE
Citation: Mj. Martin et al., MONTE-CARLO ANALYSIS OF A SCHOTTKY DIODE WITH AN AUTOMATIC SPACE-VARIABLE CHARGE ALGORITHM, Semiconductor science and technology, 11(3), 1996, pp. 380-387
PHYSICAL MODELS OF OHMIC CONTACT FOR MONTE-CARLO DEVICE SIMULATION
Authors: GONZALEZ T PARDO D
Citation: T. Gonzalez et D. Pardo, PHYSICAL MODELS OF OHMIC CONTACT FOR MONTE-CARLO DEVICE SIMULATION, Solid-state electronics, 39(4), 1996, pp. 555-562
NUMERICAL AND EXPERIMENTAL-ANALYSIS OF THE STATIC CHARACTERISTICS ANDNOISE IN UNGATED RECESSED MESFET STRUCTURES
Authors: MATEOS J GONZALEZ T PARDO D TADYSZAK P DANNEVILLE F CAPPY A
Citation: J. Mateos et al., NUMERICAL AND EXPERIMENTAL-ANALYSIS OF THE STATIC CHARACTERISTICS ANDNOISE IN UNGATED RECESSED MESFET STRUCTURES, Solid-state electronics, 39(11), 1996, pp. 1629-1636
LAMINAR DISTRIBUTION OF MK-801 KAINATE, AMPA, AND MUSCIMOL BINDING-SITES IN CAT VISUAL-CORTEX - A DEVELOPMENTAL-STUDY
Authors: GORDON B PARDO D CONANT K
Citation: B. Gordon et al., LAMINAR DISTRIBUTION OF MK-801 KAINATE, AMPA, AND MUSCIMOL BINDING-SITES IN CAT VISUAL-CORTEX - A DEVELOPMENTAL-STUDY, Journal of comparative neurology, 365(3), 1996, pp. 466-478
ANALYSIS OF CURRENT FLUCTUATIONS IN SILICON PN(+) AND P(+)N HOMOJUNCTIONS
Authors: MARTIN MJ VELAZQUEZ JE PARDO D
Citation: Mj. Martin et al., ANALYSIS OF CURRENT FLUCTUATIONS IN SILICON PN(+) AND P(+)N HOMOJUNCTIONS, Journal of applied physics, 79(9), 1996, pp. 6975-6981
Risultati: 1-25 | 26-40