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Results: 1-6 |
Results: 6

Authors: ALEKSANDROV OV ZAKHARIN AO SOBOLEV NA SHEK EI MAKOVIICHUK MI PARSHIN EO
Citation: Ov. Aleksandrov et al., FORMATION OF DONOR CENTERS UPON ANNEALING OF DYSPROSIUM-IMPLANTED ANDHOLMIUM-IMPLANTED SILICON, Semiconductors (Woodbury, N.Y.), 32(9), 1998, pp. 921-923

Authors: TERUKOV EI KUZNETSOV AN PARSHIN EO WEISER G KUEHNE H
Citation: Ei. Terukov et al., PHOTOLUMINESCENCE OF ERBIUM IN AMORPHOUS HYDROGENATED PHOSPHORUS-DOPED SILICON, Semiconductors, 31(7), 1997, pp. 738-739

Authors: MAKOVIYCHUK MI PARSHIN EO REKSHINSKII VA
Citation: Mi. Makoviychuk et al., FLICKER NOISE IN ION-IMPLANTED SILICON STRUCTURES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 414-417

Authors: BRESLER MS GUSEV OB ZAKHARCHENYA BP PAK PE SOBOLEV NA SHEK EI YASSIEVICH IN MAKOVIICHUK MI PARSHIN EO
Citation: Ms. Bresler et al., ELECTROLUMINESCENCE OF ERBIUM-DOPED SILICON, Semiconductors, 30(5), 1996, pp. 479-482

Authors: NAIDENOV VO SOBOLEV NA ALEXANDROV OB BRESLER MS GUSEV OV GUSINSKII GM SHEK EI MAKAVIICHUK MI PARSHIN EO
Citation: Vo. Naidenov et al., NUCLEAR METHODS IN TECHNOLOGY OF SI-ER STRUCTURES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 99(1-4), 1995, pp. 587-589

Authors: SOBOLEV NA BRESLER MS GUSEV OB SHEK EI MAKAVIICHUK MI PARSHIN EO
Citation: Na. Sobolev et al., EFFECT OF ANNEALING CONDITIONS ON THE PHOTOLUMINESCENCE INTENSITY OF SIER, Semiconductors, 28(11), 1994, pp. 1100-1102
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