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Results: 1-25 | 26-31
Results: 1-25/31
AN INVESTIGATION OF THE PROPERTIES OF INTIMATE IN-INXGA1-XAS(100) INTERFACES FORMED AT ROOM AND CRYOGENIC TEMPERATURES
Authors: CAMMACK DS MCGREGOR SM MCCHESNEY JJ CLARK SA DUNSTAN PR BURGESS SR WILKS SP PEIRO F FERRER JC CORNET A MORANTE JR KESTLE A WESTWOOD DI ELLIOTT M
Citation: Ds. Cammack et al., AN INVESTIGATION OF THE PROPERTIES OF INTIMATE IN-INXGA1-XAS(100) INTERFACES FORMED AT ROOM AND CRYOGENIC TEMPERATURES, Applied surface science, 123, 1998, pp. 501-507
MORPHOLOGY EVOLUTION OF INSB ISLAND GROWN ON INP SUBSTRATES BY ATOMICLAYER MOLECULAR-BEAM EPITAXY
Authors: FERRER JC PEIRO F CORNET A MORANTE JR UTZMEIER T ARMELLES G BRIONES F
Citation: Jc. Ferrer et al., MORPHOLOGY EVOLUTION OF INSB ISLAND GROWN ON INP SUBSTRATES BY ATOMICLAYER MOLECULAR-BEAM EPITAXY, Microelectronic engineering, 43-4, 1998, pp. 51-57
POTENTIAL USE OF THE TENDENCY OF III-V ALLOYS TO SEPARATE FOR FABRICATION OF LOW DIMENSIONALITY STRUCTURES
Authors: GEORGAKILAS A MICHELAKIS K HALKIAS G BECOURT N PEIRO F CORNET A
Citation: A. Georgakilas et al., POTENTIAL USE OF THE TENDENCY OF III-V ALLOYS TO SEPARATE FOR FABRICATION OF LOW DIMENSIONALITY STRUCTURES, Microelectronic engineering, 42, 1998, pp. 583-586
STRAIN-INDUCED QUENCHING OF OPTICAL-TRANSITIONS IN CAPPED SELF-ASSEMBLED QUANTUM-DOT STRUCTURES
Authors: PRIETO JA ARMELLES G UTZMEIER T BRIONES F FERRER JC PEIRO F CORNET A MORANTE JR
Citation: Ja. Prieto et al., STRAIN-INDUCED QUENCHING OF OPTICAL-TRANSITIONS IN CAPPED SELF-ASSEMBLED QUANTUM-DOT STRUCTURES, Physical review letters, 80(5), 1998, pp. 1094-1097
SURFACE-ROUGHNESS IN INGAAS CHANNELS OF HIGH-ELECTRON-MOBILITY TRANSISTORS DEPENDING ON THE GROWTH TEMPERATURE - STRAIN-INDUCED OR DUE TO ALLOY DECOMPOSITION
Authors: PEIRO F CORNET A MORANTE JR BECK M PY MA
Citation: F. Peiro et al., SURFACE-ROUGHNESS IN INGAAS CHANNELS OF HIGH-ELECTRON-MOBILITY TRANSISTORS DEPENDING ON THE GROWTH TEMPERATURE - STRAIN-INDUCED OR DUE TO ALLOY DECOMPOSITION, Journal of applied physics, 83(12), 1998, pp. 7537-7541
INTRAHEPATIC SCLEROSING CHOLANGITIS
Authors: MONTALVA E VAZQUEZ A ARTIGUES E PEIRO F ALBEROLA A GARCIACORET MJ FABRA R TRULLENQUE R
Citation: E. Montalva et al., INTRAHEPATIC SCLEROSING CHOLANGITIS, British Journal of Surgery, 85, 1998, pp. 54-54
A MODIFIED CORE OUT FISTULECTOMY
Authors: BERNALSPREKELSEN JC LOPEZ J PEIRO F ESCLAPEZ P ALBEROLA A CARDENAS F TRULLENQUE R
Citation: Jc. Bernalsprekelsen et al., A MODIFIED CORE OUT FISTULECTOMY, British Journal of Surgery, 85, 1998, pp. 89-89
MULTIPLE COLON TUMORS - DIAGNOSIS AND FOLLOW-UP OF 600 PATIENTS WITH COLORECTAL-CARCINOMA
Authors: BERNALSPREKELSEN JC LOPEZ J PEIRO F CARDENES F PUCHADES F GARCIAROMERO J TRULLENQUE R
Citation: Jc. Bernalsprekelsen et al., MULTIPLE COLON TUMORS - DIAGNOSIS AND FOLLOW-UP OF 600 PATIENTS WITH COLORECTAL-CARCINOMA, British Journal of Surgery, 85, 1998, pp. 123-123
PANCREATIC EXOCRINE FUNCTION AFTER ACUTE BILIARY PANCREATITIS
Authors: PAREJA E ARTIGUES E LOPEZ R FABRA R VAZQUEZ A BAUTISTA D PEIRO F TRULLENQUE R
Citation: E. Pareja et al., PANCREATIC EXOCRINE FUNCTION AFTER ACUTE BILIARY PANCREATITIS, British Journal of Surgery, 85, 1998, pp. 141-142
MICROSTRUCTURE OF PYRAMIDAL DEFECTS IN INSB LAYERS GROWN BY ATOMIC LAYER MOLECULAR-BEAM EPITAXY ON INP SUBSTRATES
Authors: FERRER JC PEIRO F CORNET A MORANTE JR UTZMEIER T BRIONES F
Citation: Jc. Ferrer et al., MICROSTRUCTURE OF PYRAMIDAL DEFECTS IN INSB LAYERS GROWN BY ATOMIC LAYER MOLECULAR-BEAM EPITAXY ON INP SUBSTRATES, Journal de physique. III, 7(12), 1997, pp. 2317-2324
WELL SURFACE-ROUGHNESS AND FAULT DENSITY EFFECTS ON THE HALL-MOBILITYOF INXGA1-XAS INYAL1-YAS/INP HIGH-ELECTRON-MOBILITY TRANSISTORS/
Authors: PEIRO F FERRER JC CORNET A MORANTE JR BECK M PY MA
Citation: F. Peiro et al., WELL SURFACE-ROUGHNESS AND FAULT DENSITY EFFECTS ON THE HALL-MOBILITYOF INXGA1-XAS INYAL1-YAS/INP HIGH-ELECTRON-MOBILITY TRANSISTORS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(5), 1997, pp. 1715-1723
CORRELATION OF ELECTRICAL ANISOTROPIES OF HEMT DEVICES WITH DEFECT DISTRIBUTION AND INGAAS WELL ROUGHNESS
Authors: PEIRO F FERRER JC CORNET A MORANTE JR BECK M PY MA
Citation: F. Peiro et al., CORRELATION OF ELECTRICAL ANISOTROPIES OF HEMT DEVICES WITH DEFECT DISTRIBUTION AND INGAAS WELL ROUGHNESS, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 325-329
ANISOTROPIC DISTRIBUTION OF CRYSTALLINE DEFECTS ALONG [011] AND [01(1)OVER-BAR] DIRECTIONS IN IN0.52AL0.48AS BUFFER LAYERS GROWN ON INP
Authors: PEIRO F CORNET A MORANTE JR
Citation: F. Peiro et al., ANISOTROPIC DISTRIBUTION OF CRYSTALLINE DEFECTS ALONG [011] AND [01(1)OVER-BAR] DIRECTIONS IN IN0.52AL0.48AS BUFFER LAYERS GROWN ON INP, Materials science and technology, 13(11), 1997, pp. 957-960
SELF-ORGANIZATION OF QUANTUM WIRE-LIKE MORPHOLOGY ON INXGA1-XAS SINGLE QUANTUM-WELLS GROWN ON (100)INP VICINAL SURFACES DEPENDING ON THE SUBSTRATE MISORIENTATION, BUFFER MISMATCH AND GROWTH TEMPERATURE
Authors: PEIRO F CORNET A MORANTE JR HALKIAS G GEORGAKILAS A
Citation: F. Peiro et al., SELF-ORGANIZATION OF QUANTUM WIRE-LIKE MORPHOLOGY ON INXGA1-XAS SINGLE QUANTUM-WELLS GROWN ON (100)INP VICINAL SURFACES DEPENDING ON THE SUBSTRATE MISORIENTATION, BUFFER MISMATCH AND GROWTH TEMPERATURE, Microelectronics, 28(8-10), 1997, pp. 865-873
SURFACE STEP BUNCHING AND CRYSTAL DEFECTS IN INALAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY ON (111)B INP SUBSTRATES
Authors: BECOURT N PEIRO F CORNET A MORANTE JR GOROSTIZA P HALKIAS G MICHELAKIS K GEORGAKILAS A
Citation: N. Becourt et al., SURFACE STEP BUNCHING AND CRYSTAL DEFECTS IN INALAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY ON (111)B INP SUBSTRATES, Applied physics letters, 71(20), 1997, pp. 2961-2963
QUANTIFICATION BY OPTICAL-ABSORPTION OF THE COARSE MODULATION OBSERVED BY TRANSMISSION ELECTRON-MICROSCOPY IN INGAAS LAYERS GROWN ON INP(100)
Authors: ROURA P BOSCH J CLARK SA PEIRO F CORNET A MORANTE JR WILLIAMS RH
Citation: P. Roura et al., QUANTIFICATION BY OPTICAL-ABSORPTION OF THE COARSE MODULATION OBSERVED BY TRANSMISSION ELECTRON-MICROSCOPY IN INGAAS LAYERS GROWN ON INP(100), Semiconductor science and technology, 11(9), 1996, pp. 1310-1316
STRUCTURAL-ANALYSIS OF INGAAS TENSILE LAYERS ON INP
Authors: DIEGUEZ A CLARK SA CORNET A ROURA P PEIRO F WILLIAMS RH MORANTE JR
Citation: A. Dieguez et al., STRUCTURAL-ANALYSIS OF INGAAS TENSILE LAYERS ON INP, Materials science and technology, 12(2), 1996, pp. 190-192
COMPETITIVE EVOLUTION OF THE FINE CONTRAST MODULATION AND CUPT ORDERING IN INGAP GAAS LAYERS/
Authors: DIEGUEZ A PEIRO F CORNET A MORANTE R ALSINA F PASCUAL J
Citation: A. Dieguez et al., COMPETITIVE EVOLUTION OF THE FINE CONTRAST MODULATION AND CUPT ORDERING IN INGAP GAAS LAYERS/, Journal of applied physics, 80(7), 1996, pp. 3798-3803
SELF-ASSEMBLED QUANTUM DOTS OF INSB GROWN ON INP BY ATOMIC LAYER MOLECULAR-BEAM EPITAXY - MORPHOLOGY AND STRAIN RELAXATION
Authors: FERRER JC PEIRO F COMET A MORANTE JR UZTMEIER T ARMELLES G BRIONES F
Citation: Jc. Ferrer et al., SELF-ASSEMBLED QUANTUM DOTS OF INSB GROWN ON INP BY ATOMIC LAYER MOLECULAR-BEAM EPITAXY - MORPHOLOGY AND STRAIN RELAXATION, Applied physics letters, 69(25), 1996, pp. 3887-3889
INTRINSIC ASYMMETRY BETWEEN THE [011] AND [01(1)OVER-BAR] CRYSTALLOGRAPHIC DIRECTIONS IN THE IN0.52AL0.48AS INP MATCHED SYSTEM/
Authors: PEIRO F CORNET A MORANTE JR
Citation: F. Peiro et al., INTRINSIC ASYMMETRY BETWEEN THE [011] AND [01(1)OVER-BAR] CRYSTALLOGRAPHIC DIRECTIONS IN THE IN0.52AL0.48AS INP MATCHED SYSTEM/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(5), 1995, pp. 2057-2063
COMPOSITION INHOMOGENEITIES IN THE BUFFER LAYERS OF IN0.52AL0.48AS INXGA1-XAS/INP MULTIQUANTUM-WELL STRUCTURES DRIVEN BY IN SEGREGATION/
Authors: PEIRO F CORNET A MORANTE JR GEORGAKILAS A
Citation: F. Peiro et al., COMPOSITION INHOMOGENEITIES IN THE BUFFER LAYERS OF IN0.52AL0.48AS INXGA1-XAS/INP MULTIQUANTUM-WELL STRUCTURES DRIVEN BY IN SEGREGATION/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(3), 1995, pp. 1006-1009
PARTIAL AND PERFECT DISLOCATION NUCLEATION AT THE ONSET OF STRESS-RELAXATION IN IN0.60GA0.40AS ACTIVE LAYERS OF HIGH-MOBILITY TRANSISTORS GROWN ON INP
Authors: PEIRO F CORNET A MORANTE JR
Citation: F. Peiro et al., PARTIAL AND PERFECT DISLOCATION NUCLEATION AT THE ONSET OF STRESS-RELAXATION IN IN0.60GA0.40AS ACTIVE LAYERS OF HIGH-MOBILITY TRANSISTORS GROWN ON INP, Journal of applied physics, 77(10), 1995, pp. 4993-4996
QUANTUM WIRE-LIKE INDUCED MORPHOLOGY IN INGAAS WELLS GROWN ON INYAL1-YAS TENSILE BUFFER LAYERS OVER (100)INP VICINAL SURFACES
Authors: PEIRO F CORNET A MORANTE JR GEORGAKILAS A WOOD C CHRISTOU A
Citation: F. Peiro et al., QUANTUM WIRE-LIKE INDUCED MORPHOLOGY IN INGAAS WELLS GROWN ON INYAL1-YAS TENSILE BUFFER LAYERS OVER (100)INP VICINAL SURFACES, Applied physics letters, 66(18), 1995, pp. 2391-2393
THE CHARACTERISTICS OF INTIMATE AU-INYAL1-Y SCHOTTKY DIODES - A MISMATCH DEPENDENCE STUDY
Authors: CLARK SA WILKS SP WILLIAMS RH LUO JK PEIRO F PEREZRODRIGUEZ A CORNET A MORANTE JR
Citation: Sa. Clark et al., THE CHARACTERISTICS OF INTIMATE AU-INYAL1-Y SCHOTTKY DIODES - A MISMATCH DEPENDENCE STUDY, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 433-438
CONTRAST MODULATIONS IN INALAS INP
Authors: PEIRO F CORNET A MORANTE JR GEORGAKILAS A CHRISTOU A
Citation: F. Peiro et al., CONTRAST MODULATIONS IN INALAS INP, Journal of electronic materials, 23(9), 1994, pp. 969-974
Risultati: 1-25 | 26-31