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Results: 1-12 |
Results: 12
CRITICAL ISSUES IN ION-IMPLANTATION OF SILICON BELOW 5 KEV - DEFECTS AND DIFFUSION
Authors: AGARWAL A GOSSMANN HJ EAGLESHAM DJ PELAZ L JACOBSON DC POATE JM HAYNES TE
Citation: A. Agarwal et al., CRITICAL ISSUES IN ION-IMPLANTATION OF SILICON BELOW 5 KEV - DEFECTS AND DIFFUSION, Materials science & engineering. A, Structural materials: properties, microstructure and processing, 253(1-2), 1998, pp. 269-274
DAMAGE, DEFECTS AND DIFFUSION FROM ULTRA-LOW ENERGY (0-5 KEV) ION-IMPLANTATION OF SILICON
Authors: AGARWAL A GOSSMANN HJ EAGLESHAM DJ PELAZ L HERNER SB JACOBSON DC HAYNES TE SIMONTON R
Citation: A. Agarwal et al., DAMAGE, DEFECTS AND DIFFUSION FROM ULTRA-LOW ENERGY (0-5 KEV) ION-IMPLANTATION OF SILICON, Solid-state electronics, 42(5), 1998, pp. 17-25
MODELING OF THE ION MASS EFFECT ON TRANSIENT ENHANCED DIFFUSION - DEVIATION FROM THE -MODEL(1)
Authors: PELAZ L GILMER GH JARAIZ M HERNER SB GOSSMANN HJ EAGLESHAM DJ HOBLER G RAFFERTY CS BARBOLLA J
Citation: L. Pelaz et al., MODELING OF THE ION MASS EFFECT ON TRANSIENT ENHANCED DIFFUSION - DEVIATION FROM THE -MODEL(1), Applied physics letters, 73(10), 1998, pp. 1421-1423
REDUCTION OF TRANSIENT DIFFUSION FROM 1-5 KEV SI-IMPLANTATION DUE TO SURFACE ANNIHILATION OF INTERSTITIALS( ION)
Authors: AGARWAL A GOSSMANN HJ EAGLESHAM DJ PELAZ L JACOBSON DC HAYNES TE EROKHIN YE
Citation: A. Agarwal et al., REDUCTION OF TRANSIENT DIFFUSION FROM 1-5 KEV SI-IMPLANTATION DUE TO SURFACE ANNIHILATION OF INTERSTITIALS( ION), Applied physics letters, 71(21), 1997, pp. 3141-3143
B-DIFFUSION AND CLUSTERING IN ION-IMPLANTED SI - THE ROLE OF B-CLUSTER PRECURSORS
Authors: PELAZ L JARAIZ M GILMER GH GOSSMANN HJ RAFFERTY CS EAGLESHAM DJ POATE JM
Citation: L. Pelaz et al., B-DIFFUSION AND CLUSTERING IN ION-IMPLANTED SI - THE ROLE OF B-CLUSTER PRECURSORS, Applied physics letters, 70(17), 1997, pp. 2285-2287
MOLECULAR-DYNAMICS STUDY OF THE FLUENCE DEPENDENCE OF SI SPUTTERING BY 1 KEV AR+ IONS
Authors: RUBIO JE MARQUES LA PELAZ L JARAIZ M BARBOLLA J
Citation: Je. Rubio et al., MOLECULAR-DYNAMICS STUDY OF THE FLUENCE DEPENDENCE OF SI SPUTTERING BY 1 KEV AR+ IONS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 156-159
AVALANCHE BREAKDOWN OF HIGH-VOLTAGE P-N-JUNCTIONS OF SIC
Authors: PELAZ L ORANTES JL VICENTE J BAILON L BARBOLLA J
Citation: L. Pelaz et al., AVALANCHE BREAKDOWN OF HIGH-VOLTAGE P-N-JUNCTIONS OF SIC, Microelectronics, 27(1), 1996, pp. 43-51
DOPANT LEVEL FREEZE-OUT AND NONIDEAL EFFECTS IN 6H-SIC EPILAYER JUNCTIONS
Authors: QUINTANILA L DUENAS S CASTAN E PINACHO R PELAZ L BAILON L BARBOLLA J
Citation: L. Quintanila et al., DOPANT LEVEL FREEZE-OUT AND NONIDEAL EFFECTS IN 6H-SIC EPILAYER JUNCTIONS, Journal of applied physics, 79(1), 1996, pp. 310-315
DETAILED COMPUTER-SIMULATION OF ION-IMPLANTATION PROCESSES INTO CRYSTALS
Authors: ARIAS J JARAIZ M RUBIO JE PELAZ L MARQUES LA BARBOLLA J
Citation: J. Arias et al., DETAILED COMPUTER-SIMULATION OF ION-IMPLANTATION PROCESSES INTO CRYSTALS, Materials science and technology, 11(11), 1995, pp. 1191-1193
LOW-ENERGY ION-IMPLANTATION SIMULATION USING A MODIFIED BINARY COLLISION APPROXIMATION CODE
Authors: ARIAS J JARAIZ M PELAZ L BAILON LA BARBOLLA J
Citation: J. Arias et al., LOW-ENERGY ION-IMPLANTATION SIMULATION USING A MODIFIED BINARY COLLISION APPROXIMATION CODE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 102(1-4), 1995, pp. 228-231
SATURATION OF GENERATION-RECOMBINATION CURRENT FOR VERY SMALL RECOMBINATION TIMES
Authors: PELAZ L ORANTES JL ENRIQUEZ L BAILON L BARBOLLA J
Citation: L. Pelaz et al., SATURATION OF GENERATION-RECOMBINATION CURRENT FOR VERY SMALL RECOMBINATION TIMES, Journal of applied physics, 76(11), 1994, pp. 7384-7389
THE POOLE-FRENKEL EFFECT IN 6H-SIC DIODE CHARACTERISTICS
Authors: PELAZ L ORANTES JL VINCENTE J BAILON LA BARBOLLA J
Citation: L. Pelaz et al., THE POOLE-FRENKEL EFFECT IN 6H-SIC DIODE CHARACTERISTICS, I.E.E.E. transactions on electron devices, 41(4), 1994, pp. 587-591
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