Authors: FOSSUM JG PELELLA MM KRISHNAN S

Citation: Jg. Fossum et al., SCALABLE PD SOI CMOS WITH FLOATING BODIES, IEEE electron device letters, 19(11), 1998, pp. 414-416

Authors: WORKMAN GO FOSSUM JG KRISHNAN S PELELLA MM

Citation: Go. Workman et al., PHYSICAL MODELING OF TEMPERATURE DEPENDENCES OF SOI CMOS DEVICES AND CIRCUITS INCLUDING SELF-HEATING, I.E.E.E. transactions on electron devices, 45(1), 1998, pp. 125-133

Authors: CHANG D FOSSUM JG REYNOLDS SK PELELLA MM

Citation: D. Chang et al., KINK-FREE SOI ANALOG CIRCUIT-DESIGN WITH FLOATING-BODY NFD MOSFETS/, IEEE electron device letters, 18(12), 1997, pp. 602-605

Authors: LU PE CHUANG CT JI J WAGNER LF HSIEH CM KUANG JB HSU LLC PELELLA MM CHU SFS ANDERSON CJ

Citation: Pe. Lu et al., FLOATING-BODY EFFECTS IN PARTIALLY DEPLETED SOI CMOS CIRCUITS, IEEE journal of solid-state circuits, 32(8), 1997, pp. 1241-1253

Authors: SUH D FOSSUM JG PELELLA MM

Citation: D. Suh et al., DYNAMIC DATA RETENTION AND IMPLIED DESIGN CRITERIA FOR FLOATING-BODY SOI DRAM, IEEE electron device letters, 17(8), 1996, pp. 385-387

Authors: PELELLA MM FOSSUM JG SUH DW KRISHNAN S JENKINS KA HARGROVE MJ

Citation: Mm. Pelella et al., LOW-VOLTAGE TRANSIENT BIPOLAR EFFECT INDUCED BY DYNAMIC FLOATING-BODYCHARGING IN SCALED PD SOI MOSFETS/, IEEE electron device letters, 17(5), 1996, pp. 196-198