AAAAAA

   
Results: 1-8 |
Results: 8
THE ORIGIN OF DOMINATING ESR ABSORPTION IN ION-IMPLANTED DIAMOND
Authors: ERTCHAK DP EFIMOV VG STELMAKH VF MARTINOVICH VA ALEXANDROV AF GUSEVA MB PENINA NM VARICHENKO VS KARPOVICH IA ZAITSEV AM FAHRNER WR FINK D
Citation: Dp. Ertchak et al., THE ORIGIN OF DOMINATING ESR ABSORPTION IN ION-IMPLANTED DIAMOND, Physica status solidi. b, Basic research, 203(2), 1997, pp. 529-547
DEFORMATION OF POROUS SILICON LATTICE CAUSED BY ABSORPTION DESORPTIONPROCESSES (VOL 144, PG 1463, 1997)/
Authors: CHELYADINSKY AR DOROFEEV AM KAZUCHITS NM LAMONICA S LAZAROUK SK MAIELLO G MASINI G PENINA NM STELMAKH VF BONDARENKO VP FERRARI A
Citation: Ar. Chelyadinsky et al., DEFORMATION OF POROUS SILICON LATTICE CAUSED BY ABSORPTION DESORPTIONPROCESSES (VOL 144, PG 1463, 1997)/, Journal of the Electrochemical Society, 144(5), 1997, pp. 1890-1890
DEFORMATION OF POROUS SILICON LATTICE CAUSED BY ABSORPTION DESORPTIONPROCESSES/
Authors: CHELYADINSKY AR DOROFEEV AM KAZUCHITS NM LAMONICA S LAZAROUK SK MAIELLO G MASINI G PENINA NM STELMAKH VF BONDARENKO VP FERRARI A
Citation: Ar. Chelyadinsky et al., DEFORMATION OF POROUS SILICON LATTICE CAUSED BY ABSORPTION DESORPTIONPROCESSES/, Journal of the Electrochemical Society, 144(4), 1997, pp. 1463-1468
PROPERTIES OF LI DOPED DIAMOND FILMS, OBTAINED BY TRANSMUTATION OF B-10 INTO LI-7
Authors: POPOVICI G MELNIKOV AA VARICHENKO VS KHASAWINAH S SUNG T PRELAS MA DENISENKO AB PENINA NM MARTINOVICH VA DROZDOVA EN ZAITSEV AM FAHRNER WR FARMER JW WHITE H CHAMBERLAIN J
Citation: G. Popovici et al., PROPERTIES OF LI DOPED DIAMOND FILMS, OBTAINED BY TRANSMUTATION OF B-10 INTO LI-7, DIAMOND AND RELATED MATERIALS, 5(6-8), 1996, pp. 761-765
DEFECT PRODUCTION IN SILICON IRRADIATED WITH 5.68 GEV XE IONS
Authors: VARICHENKO VS ZAITSEV AM KAZUTCHITS NM CHELYADINSKII AR PENINA NM MARTINOVICH VA LATUSHKO YI FAHRNER WR
Citation: Vs. Varichenko et al., DEFECT PRODUCTION IN SILICON IRRADIATED WITH 5.68 GEV XE IONS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 107(1-4), 1996, pp. 268-272
EPR, XRD AND OPTICAL REFLECTIVITY STUDIES OF RADIATION-DAMAGE IN SILICON AFTER HIGH-ENERGY IMPLANTATION OF NI IONS
Authors: VARICHENKO VS ZAITSEV AM LINDNER JKN DOMRES R PENINA NM ERCHAK DP CHELYADINSKII AR MARTINOVITSH VA
Citation: Vs. Varichenko et al., EPR, XRD AND OPTICAL REFLECTIVITY STUDIES OF RADIATION-DAMAGE IN SILICON AFTER HIGH-ENERGY IMPLANTATION OF NI IONS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 94(3), 1994, pp. 240-244
DEFECT PRODUCTION IN SILICON IMPLANTED WITH 13.6-MEV BORON IONS
Authors: VARICHENKO VS ZAITSEV AM MELNIKOV AA FAHRNER WR KASYTCHITS NM PENINA NM ERCHAK DP
Citation: Vs. Varichenko et al., DEFECT PRODUCTION IN SILICON IMPLANTED WITH 13.6-MEV BORON IONS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 94(3), 1994, pp. 259-265
ELECTRON-PARAMAGNETIC-RESONANCE OF BORON-IMPLANTED NATURAL DIAMONDS AND EPITAXIAL DIAMOND FILMS
Authors: ERCHAK DP EFIMOV VG AZARKO II DENISENKO AV PENINA NM STELMAKH VF VARICHENKO VS ZAITSEV AM MELNIKOV AA
Citation: Dp. Erchak et al., ELECTRON-PARAMAGNETIC-RESONANCE OF BORON-IMPLANTED NATURAL DIAMONDS AND EPITAXIAL DIAMOND FILMS, DIAMOND AND RELATED MATERIALS, 2(8), 1993, pp. 1164-1167
Risultati: 1-8 |