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Results: 1-25 | 26-39
Results: 1-25/39
AN ELECTROCHEMICAL AND ELLIPSOMETRIC STUDY OF OXIDE-GROWTH ON SILICONDURING ANODIC ETCHING IN FLUORIDE SOLUTIONS
Authors: BAILES M BOHM S PETER LM RILEY DJ GREEF R
Citation: M. Bailes et al., AN ELECTROCHEMICAL AND ELLIPSOMETRIC STUDY OF OXIDE-GROWTH ON SILICONDURING ANODIC ETCHING IN FLUORIDE SOLUTIONS, Electrochimica acta, 43(12-13), 1998, pp. 1757-1772
IN-SITU CHARACTERIZATION OF THE P-SI NH4F INTERFACE DURING DISSOLUTION IN THE CURRENT OSCILLATIONS REGIME/
Authors: CATTARIN S CHAZALVIEL JN DAFONSECA C OZANAM F PETER LM SCHLICHTHORL G STUMPER J
Citation: S. Cattarin et al., IN-SITU CHARACTERIZATION OF THE P-SI NH4F INTERFACE DURING DISSOLUTION IN THE CURRENT OSCILLATIONS REGIME/, Journal of the Electrochemical Society, 145(2), 1998, pp. 498-502
INTENSITY-MODULATED PHOTOCURRENT SPECTROSCOPY - RECONCILIATION OF PHENOMENOLOGICAL ANALYSIS WITH MULTISTEP ELECTRON-TRANSFER MECHANISMS
Authors: PETER LM PONOMAREV EA FERMIN DJ
Citation: Lm. Peter et al., INTENSITY-MODULATED PHOTOCURRENT SPECTROSCOPY - RECONCILIATION OF PHENOMENOLOGICAL ANALYSIS WITH MULTISTEP ELECTRON-TRANSFER MECHANISMS, Journal of electroanalytical chemistry [1992], 427(1-2), 1997, pp. 79-96
DYNAMIC-RESPONSE OF DYE-SENSITIZED NANOCRYSTALLINE SOLAR-CELLS - CHARACTERIZATION BY INTENSITY-MODULATED PHOTOCURRENT SPECTROSCOPY
Authors: DLOCZIK L ILEPERUMA O LAUERMANN I PETER LM PONOMAREV EA REDMOND G SHAW NJ UHLENDORF I
Citation: L. Dloczik et al., DYNAMIC-RESPONSE OF DYE-SENSITIZED NANOCRYSTALLINE SOLAR-CELLS - CHARACTERIZATION BY INTENSITY-MODULATED PHOTOCURRENT SPECTROSCOPY, JOURNAL OF PHYSICAL CHEMISTRY B, 101(49), 1997, pp. 10281-10289
DETERMINATION OF MINORITY-CARRIER DIFFUSION LENGTH IN SILICON-WAFERS BY A DUAL ELECTROLYTE CELL
Authors: CATTARIN S PETER LM
Citation: S. Cattarin et Lm. Peter, DETERMINATION OF MINORITY-CARRIER DIFFUSION LENGTH IN SILICON-WAFERS BY A DUAL ELECTROLYTE CELL, JOURNAL OF PHYSICAL CHEMISTRY B, 101(20), 1997, pp. 3961-3967
INVESTIGATION OF THE PROCESSES OF ELECTRON INJECTION DURING DISSOLUTION OF P-SI IN ACIDIC FLUORIDE AND ALKALINE MEDIA
Authors: CATTARIN S PETER LM RILEY DJ
Citation: S. Cattarin et al., INVESTIGATION OF THE PROCESSES OF ELECTRON INJECTION DURING DISSOLUTION OF P-SI IN ACIDIC FLUORIDE AND ALKALINE MEDIA, JOURNAL OF PHYSICAL CHEMISTRY B, 101(20), 1997, pp. 4071-4076
NONTRADITIONAL METHODS FOR IN-SITU CHARACTERIZATION OF INTERFACES
Authors: PETER LM
Citation: Lm. Peter, NONTRADITIONAL METHODS FOR IN-SITU CHARACTERIZATION OF INTERFACES, Philosophical transactions-Royal Society of London. Physical sciences and engineering, 354(1712), 1996, pp. 1613-1625
OPTICAL AND ELECTRICAL CHARACTERIZATION OF CDS THIN-FILMS
Authors: OZSAN ME JOHNSON DR SADEGHI M SIVAPATHASUNDARAM D GOODLET G FURLONG MJ PETER LM SHINGLETON AA
Citation: Me. Ozsan et al., OPTICAL AND ELECTRICAL CHARACTERIZATION OF CDS THIN-FILMS, Journal of materials science. Materials in electronics, 7(2), 1996, pp. 119-125
MECHANISTIC ASPECTS OF THE ELECTRODEPOSITION OF STOICHIOMETRIC CDTE ON SEMICONDUCTOR SUBSTRATES
Authors: MEULENKAMP EA PETER LM
Citation: Ea. Meulenkamp et Lm. Peter, MECHANISTIC ASPECTS OF THE ELECTRODEPOSITION OF STOICHIOMETRIC CDTE ON SEMICONDUCTOR SUBSTRATES, Journal of the Chemical Society. Faraday transactions, 92(20), 1996, pp. 4077-4082
AN IN-SITU METHOD OF MONITORING THE SURFACE-AREA OF POROUS SILICON
Authors: PETER LM RILEY DJ WIELGOSZ RI
Citation: Lm. Peter et al., AN IN-SITU METHOD OF MONITORING THE SURFACE-AREA OF POROUS SILICON, Thin solid films, 276(1-2), 1996, pp. 61-64
MECHANISMS OF LUMINESCENCE TUNING AND QUENCHING IN POROUS SILICON
Authors: PETER LM RILEY DJ WIELGOSZ RI SNOW PA PENTY RV WHITE IH MEULENKAMP EA
Citation: Lm. Peter et al., MECHANISMS OF LUMINESCENCE TUNING AND QUENCHING IN POROUS SILICON, Thin solid films, 276(1-2), 1996, pp. 123-129
LIGHT-INDUCED ELECTROLUMINESCENCE OF POROUS SILICON LAYERS ON P-SI INPERSULFATE SOLUTION
Authors: PETER LM WIELGOSZ RI
Citation: Lm. Peter et Ri. Wielgosz, LIGHT-INDUCED ELECTROLUMINESCENCE OF POROUS SILICON LAYERS ON P-SI INPERSULFATE SOLUTION, Applied physics letters, 69(6), 1996, pp. 806-808
THE INFLUENCE OF WATER ON THE ELECTROCHEMICAL ACTIVITY OF POLY(N-VINYLCARBAZOLE) FILMS
Authors: SKOMPSKA M PETER LM
Citation: M. Skompska et Lm. Peter, THE INFLUENCE OF WATER ON THE ELECTROCHEMICAL ACTIVITY OF POLY(N-VINYLCARBAZOLE) FILMS, Journal of electroanalytical chemistry [1992], 398(1-2), 1995, pp. 57-66
A COMPARISON OF INTENSITY-MODULATED PHOTOCURRENT SPECTROSCOPY AND PHOTOELECTROCHEMICAL IMPEDANCE SPECTROSCOPY IN A STUDY OF PHOTOELECTROCHEMICAL HYDROGEN EVOLUTION AT P-INP
Authors: PONOMAREV EA PETER LM
Citation: Ea. Ponomarev et Lm. Peter, A COMPARISON OF INTENSITY-MODULATED PHOTOCURRENT SPECTROSCOPY AND PHOTOELECTROCHEMICAL IMPEDANCE SPECTROSCOPY IN A STUDY OF PHOTOELECTROCHEMICAL HYDROGEN EVOLUTION AT P-INP, Journal of electroanalytical chemistry [1992], 397(1-2), 1995, pp. 45-52
A GENERALIZED THEORY OF INTENSITY-MODULATED PHOTOCURRENT SPECTROSCOPY(IMPS)
Authors: PONOMAREV EA PETER LM
Citation: Ea. Ponomarev et Lm. Peter, A GENERALIZED THEORY OF INTENSITY-MODULATED PHOTOCURRENT SPECTROSCOPY(IMPS), Journal of electroanalytical chemistry [1992], 396(1-2), 1995, pp. 219-226
ON THE MECHANISM OF THE VOLTAGE TUNING OF PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE IN POROUS SILICON
Authors: MEULENKAMP EA PETER LM RILEY DJ WIELGOSZ RI
Citation: Ea. Meulenkamp et al., ON THE MECHANISM OF THE VOLTAGE TUNING OF PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE IN POROUS SILICON, Journal of electroanalytical chemistry [1992], 392(1-2), 1995, pp. 97-100
PHOTOEFFECTS DURING CATHODIC ELECTRODEPOSITION OF CDTE
Authors: SUGIMOTO Y PETER LM
Citation: Y. Sugimoto et Lm. Peter, PHOTOEFFECTS DURING CATHODIC ELECTRODEPOSITION OF CDTE, Journal of electroanalytical chemistry [1992], 386(1-2), 1995, pp. 183-188
ELECTRODEPOSITION AND ELECTROCHEMICAL PROPERTIES OF POLY(N-VINYLCARBAZOLE) FILMS ON PLATINUM-ELECTRODES
Authors: SKOMPSKA M PETER LM
Citation: M. Skompska et Lm. Peter, ELECTRODEPOSITION AND ELECTROCHEMICAL PROPERTIES OF POLY(N-VINYLCARBAZOLE) FILMS ON PLATINUM-ELECTRODES, Journal of electroanalytical chemistry [1992], 383(1-2), 1995, pp. 43-52
POTENTIAL-MODULATION-INDUCED MICROWAVE REFLECTIVITY MEASUREMENTS ON SILICON IN FLUORIDE SOLUTIONS
Authors: SCHLICHTHORL G PETER LM
Citation: G. Schlichthorl et Lm. Peter, POTENTIAL-MODULATION-INDUCED MICROWAVE REFLECTIVITY MEASUREMENTS ON SILICON IN FLUORIDE SOLUTIONS, Journal of electroanalytical chemistry [1992], 381(1-2), 1995, pp. 55-61
CATHODIC ELECTRODEPOSITION OF CDTE ON N-TYPE MONOCRYSTALLINE SILICON
Authors: SUGIMOTO Y PETER LM
Citation: Y. Sugimoto et Lm. Peter, CATHODIC ELECTRODEPOSITION OF CDTE ON N-TYPE MONOCRYSTALLINE SILICON, Journal of electroanalytical chemistry [1992], 381(1-2), 1995, pp. 251-255
THE ROLE OF SURFACE-DEFECTS IN THE PHOTOOXIDATION OF IODIDE AT N-MOSE2 - EVIDENCE FOR A LOCAL AUTOCATALYTIC EFFECT
Authors: CHAPARRO AM SALVADOR P PETER LM
Citation: Am. Chaparro et al., THE ROLE OF SURFACE-DEFECTS IN THE PHOTOOXIDATION OF IODIDE AT N-MOSE2 - EVIDENCE FOR A LOCAL AUTOCATALYTIC EFFECT, Journal of physical chemistry, 99(17), 1995, pp. 6677-6683
AN INVESTIGATION OF HYDROGEN EVOLUTION AT P-SI BY INTENSITY-MODULATEDPHOTOCURRENT SPECTROSCOPY AND PHOTOMODULATED MICROWAVE REFLECTIVITY
Authors: SCHLICHTHORL G PONOMAREV EA PETER LM
Citation: G. Schlichthorl et al., AN INVESTIGATION OF HYDROGEN EVOLUTION AT P-SI BY INTENSITY-MODULATEDPHOTOCURRENT SPECTROSCOPY AND PHOTOMODULATED MICROWAVE REFLECTIVITY, Journal of the Electrochemical Society, 142(9), 1995, pp. 3062-3067
IMPEDANCE AND MICROWAVE REFLECTIVITY MEASUREMENTS ON N-SI IN 1M LICL METHANOL .1. DEPLETION AND INVERSION LAYER FORMATION
Authors: SCHLICHTHORL G PETER LM
Citation: G. Schlichthorl et Lm. Peter, IMPEDANCE AND MICROWAVE REFLECTIVITY MEASUREMENTS ON N-SI IN 1M LICL METHANOL .1. DEPLETION AND INVERSION LAYER FORMATION, Journal of the Electrochemical Society, 142(8), 1995, pp. 2665-2669
IN-SITU MONITORING OF INTERNAL SURFACE-AREA DURING THE GROWTH OF POROUS SILICON
Authors: PETER LM RILEY DJ WIELGOSZ RI
Citation: Lm. Peter et al., IN-SITU MONITORING OF INTERNAL SURFACE-AREA DURING THE GROWTH OF POROUS SILICON, Applied physics letters, 66(18), 1995, pp. 2355-2357
THE POTENTIAL DISTRIBUTION ACROSS THE SEMICONDUCTOR ELECTROLYTE INTERFACE - A STUDY BY ELECTROLYTE ELECTROREFLECTANCE SPECTROSCOPY OF GAAS AND GA1-XALXAS UNDER CONDITIONS OF PHOTODISSOLUTION
Authors: HUTTON RS PETER LM BATCHELOR RA HAMNETT A
Citation: Rs. Hutton et al., THE POTENTIAL DISTRIBUTION ACROSS THE SEMICONDUCTOR ELECTROLYTE INTERFACE - A STUDY BY ELECTROLYTE ELECTROREFLECTANCE SPECTROSCOPY OF GAAS AND GA1-XALXAS UNDER CONDITIONS OF PHOTODISSOLUTION, Journal of electroanalytical chemistry [1992], 375(1-2), 1994, pp. 193-201
Risultati: 1-25 | 26-39