Authors:
IBRAGIMOVA MI
BARYSHEV NS
PETUKHOV VY
KHAIBULLIN IB
Citation: Mi. Ibragimova et al., EFFECT OF SUCCESSIVE IMPLANTATION OF AG-XTE CRYSTALS((CU+) AND XE+ IONS ON THE RECOMBINATION PROPERTIES OF CDXHG1), Semiconductors, 31(7), 1997, pp. 666-668
Authors:
GUMAROV GG
PETUKHOV VY
ZHIKHAREV VA
SHUSTOV VA
KHAIBULLIN IB
Citation: Gg. Gumarov et al., ANOMALOUS DISTRIBUTION OF IRON ATOMS FOLLOWING THE SIMULTANEOUS IMPLANTATION OF CO+ AND FE+ IONS IN SILICON, Semiconductors, 31(6), 1997, pp. 615-617
Authors:
GUMAROV GG
PETUKHOV VY
SHUSTOV VA
KHAIBULLIN IB
Citation: Gg. Gumarov et al., EFFECT OF ION CURRENT-DENSITY ON THE PHASE-COMPOSITION OF ION-BEAM SYNTHESIZED IRON SILICIDES IN SI(100), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 321-323
Authors:
IBRAGIMOVA MI
BARYSHEV NS
PETUKHOV VY
KHAIBULLIN IB
Citation: Mi. Ibragimova et al., PECULIARITIES OF CARRIER RECOMBINATION IN CDXHG1-XTE IMPLANTED CONSECUTIVELY WITH AG+ (CU+) AND XE+ IONS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 471-474
Citation: Mi. Ibragimova et al., RADIATION SWELLING AND SPUTTERING OF CDXHG1-XTE AS A RESULT OF LARGE-DOSE ION-IMPLANTATION, Semiconductors, 27(4), 1993, pp. 311-314