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Results:
1-19
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Results: 19
Authors:
PIVAC B
MOGUSMILANKOVIC A
DAY DE
Citation: B. Pivac et al., IRON VALENCE AND COORDINATION IN PHOSPHATE-GLASSES AS STUDIED BY OPTICAL SPECTROSCOPY, Journal of non-crystalline solids, 226(1-2), 1998, pp. 41-46
Authors:
RAKVIN B
PIVAC B
TONINI R
CORNI F
OTTAVIANI G
Citation: B. Rakvin et al., ELECTRON-PARAMAGNETIC-RESONANCE EVIDENCE FOR REVERSIBLE TRANSFORMATION OF THERMAL DONOR INTO SHALLOW DONOR-TYPE CENTER IN HYDROGEN-IMPLANTED SILICON, Applied physics letters, 73(22), 1998, pp. 3250-3252
Authors:
MAHFOUD K
PIVAC B
MULLER JC
Citation: K. Mahfoud et al., P AL CO-GETTERING EFFECTIVENESS IN VARIOUS POLYCRYSTALLINE SILICON/, Solar energy materials and solar cells, 46(2), 1997, pp. 123-131
INFRARED STUDY OF SI-RICH SILICON-OXIDE FILMS DEPOSITED BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION
Authors:
SASSELLA A
BORGHESI A
CORNI F
MONELLI A
OTTAVIANI G
TONINI R
PIVAC B
BACCHETTA M
ZANOTTI L
Citation: A. Sassella et al., INFRARED STUDY OF SI-RICH SILICON-OXIDE FILMS DEPOSITED BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(2), 1997, pp. 377-389
Authors:
GUIZZETTI G
MARABELLI F
PATRINI M
PELLEGRINO P
PIVAC B
MIGLIO L
MEREGALLI V
LANGE H
HENRION W
Citation: G. Guizzetti et al., MEASUREMENT AND SIMULATION OF ANISOTROPY IN THE INFRARED AND RAMAN-SPECTRA OF BETA-FESI2 SINGLE-CRYSTALS, Physical review. B, Condensed matter, 55(21), 1997, pp. 14290-14297
Authors:
MOGUSMILANKOVIC A
PIVAC B
FURIC K
DAY DE
Citation: A. Mogusmilankovic et al., STRUCTURAL STUDY OF IRON PHOSPHATE-GLASSES, Physics and Chemistry of Glasses, 38(2), 1997, pp. 74-78
Authors:
SASSELLA A
BORGHESI A
PIVAC B
Citation: A. Sassella et al., CROSS-SECTIONAL INFRARED TRANSMISSION MEASUREMENTS FOR HIGHLY SENSITIVE THIN-FILM CHARACTERIZATION, Mikrochimica acta, 1997, pp. 343-344
Authors:
PIVAC B
SASSELLA A
BORGHESI A
Citation: B. Pivac et al., INFRARED STUDY OF OXYGEN SEGREGATION AT STRUCTURAL DEFECTS IN POLYCRYSTALLINE SILICON, Mikrochimica acta, 1997, pp. 485-487
Authors:
RAKVIN B
PIVAC B
REITANO R
Citation: B. Rakvin et al., ELECTRON-PARAMAGNETIC-RESONANCE STUDY OF AMORPHOUS-SILICON PRODUCED BY KR-IMPLANTATION INTO SILICON( ION), Journal of applied physics, 81(8), 1997, pp. 3453-3456
Authors:
PIVAC B
SASSELLA A
BORGHESI A
Citation: B. Pivac et al., NON-DOPING LIGHT IMPURITIES IN SILICON FOR SOLAR-CELLS, Materials science & engineering. B, Solid-state materials for advanced technology, 36(1-3), 1996, pp. 55-62
Authors:
SASSELLA A
PIVAC B
ABE T
BORGHESI A
Citation: A. Sassella et al., SURFACE-MODE EXCITATION IN PLATELET SIOX PRECIPITATES IN SILICON, Materials science & engineering. B, Solid-state materials for advanced technology, 36(1-3), 1996, pp. 221-224
Authors:
BORGHESI A
SASSELLA A
PIVAC B
ZANOTTI L
Citation: A. Borghesi et al., SI-H BONDING CONFIGURATION IN SIOX-N,H FILMS DEPOSITED BY CHEMICAL-VAPOR-DEPOSITION, Solid state communications, 100(9), 1996, pp. 657-661
Authors:
BORGHESI A
PIVAC B
SASSELLA A
STELLA A
Citation: A. Borghesi et al., OXYGEN PRECIPITATION IN SILICON, Journal of applied physics, 77(9), 1995, pp. 4169-4244
Authors:
PIVAC B
TADIC T
JAKSIC M
BORGHESI A
Citation: B. Pivac et al., INFLUENCE OF CARBON ON PLATINUM DIFFUSION IN SILICON, Journal of materials science letters, 13(6), 1994, pp. 432-434
Authors:
PIVAC B
FURIC K
MILUN M
VALLA T
BORGHESI A
SASSELLA A
Citation: B. Pivac et al., SPECTROSCOPIC STUDY OF SIC-LIKE STRUCTURES FORMED ON POLYCRYSTALLINE SILICON SHEETS DURING GROWTH, Journal of applied physics, 75(7), 1994, pp. 3586-3592
Authors:
PIVAC B
RAKVIN B
PAVESI L
Citation: B. Pivac et al., PARAMAGNETIC CENTERS AT AND NEAR THE SI SIOX INTERFACE IN POROUS SILICON/, Applied physics letters, 65(25), 1994, pp. 3260-3262
Authors:
BORGHESI A
SASSELLA A
PIVAC B
PAVESI L
Citation: A. Borghesi et al., CHARACTERIZATION OF POROUS SILICON INHOMOGENEITIES BY HIGH-SPATIAL-RESOLUTION INFRARED-SPECTROSCOPY, Solid state communications, 87(1), 1993, pp. 1-4
Authors:
PIVAC B
RAKVIN B
PAVESI L
Citation: B. Pivac et al., RADIATION EFFECTS ON POROUS SILICON, Journal of luminescence, 57(1-6), 1993, pp. 227-229
Authors:
PIVAC B
BORGHESI A
SASSELLA A
KALEJS J
BATHEY BR
Citation: B. Pivac et al., INSITU CR GETTERING IN POLYCRYSTALLINE SILICON SHEETS OBTAINED BY EDGE-DEFINED FILM-FED GROWTH, Applied physics letters, 62(21), 1993, pp. 2664-2666
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