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Results: 1-23 |
Results: 23
DETERMINATION OF THE ATOMIC-STRUCTURE OF INVERSION DOMAIN BOUNDARIES IN ALPHA-GAN BY TRANSMISSION ELECTRON-MICROSCOPY
Authors: CHERNS D YOUNG WT SAUNDERS M STEEDS JW PONCE FA NAKAMURA S
Citation: D. Cherns et al., DETERMINATION OF THE ATOMIC-STRUCTURE OF INVERSION DOMAIN BOUNDARIES IN ALPHA-GAN BY TRANSMISSION ELECTRON-MICROSCOPY, Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties, 77(1), 1998, pp. 273-286
ENVIRONMENT ABOUT INDIUM IN GA1-XINXN FROM IN AND GA K-EDGE XAFS
Authors: BOOTH CH BRIDGES F KVITKY Z PONCE FA ROMANO L
Citation: Ch. Booth et al., ENVIRONMENT ABOUT INDIUM IN GA1-XINXN FROM IN AND GA K-EDGE XAFS, Journal de physique. IV, 7(C2), 1997, pp. 1253-1254
CHARACTERIZATION OF DISLOCATIONS, NANOPIPES AND INVERSION DOMAINS IN GAN BY TRANSMISSION ELECTRON-MICROSCOPY
Authors: CHERNS D YOUNG WT PONCE FA
Citation: D. Cherns et al., CHARACTERIZATION OF DISLOCATIONS, NANOPIPES AND INVERSION DOMAINS IN GAN BY TRANSMISSION ELECTRON-MICROSCOPY, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 76-81
DETECTS AND INTERFACES IN GAN EPITAXY
Authors: PONCE FA
Citation: Fa. Ponce, DETECTS AND INTERFACES IN GAN EPITAXY, MRS bulletin, 22(2), 1997, pp. 51-57
NITRIDE-BASED SEMICONDUCTORS FOR BLUE AND GREEN LIGHT-EMITTING DEVICES
Authors: PONCE FA BOUR DP
Citation: Fa. Ponce et Dp. Bour, NITRIDE-BASED SEMICONDUCTORS FOR BLUE AND GREEN LIGHT-EMITTING DEVICES, Nature, 386(6623), 1997, pp. 351-359
OBSERVATION OF CORELESS DISLOCATIONS IN ALPHA-GAN
Authors: CHERNS D YOUNG WT STEEDS JW PONCE FA NAKAMURA S
Citation: D. Cherns et al., OBSERVATION OF CORELESS DISLOCATIONS IN ALPHA-GAN, Journal of crystal growth, 178(1-2), 1997, pp. 201-206
TRANSMISSION ELECTRON-MICROSCOPY OF THE ALN-SIC INTERFACE
Authors: PONCE FA OKEEFE MA NELSON EC
Citation: Fa. Ponce et al., TRANSMISSION ELECTRON-MICROSCOPY OF THE ALN-SIC INTERFACE, Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties, 74(3), 1996, pp. 777-789
ATOMIC ARRANGEMENT AT THE ALN SIC INTERFACE
Authors: PONCE FA VANDEWALLE CG NORTHRUP JE
Citation: Fa. Ponce et al., ATOMIC ARRANGEMENT AT THE ALN SIC INTERFACE, Physical review. B, Condensed matter, 53(11), 1996, pp. 7473-7478
CHARACTERIZATION OF DISLOCATIONS IN GAN BY TRANSMISSION ELECTRON-DIFFRACTION AND MICROSCOPY TECHNIQUES
Authors: PONCE FA CHERNS D YOUNG WT STEEDS JW
Citation: Fa. Ponce et al., CHARACTERIZATION OF DISLOCATIONS IN GAN BY TRANSMISSION ELECTRON-DIFFRACTION AND MICROSCOPY TECHNIQUES, Applied physics letters, 69(6), 1996, pp. 770-772
DETERMINATION OF LATTICE POLARITY FOR GROWTH OF GAN BULK SINGLE-CRYSTALS AND EPITAXIAL LAYERS
Authors: PONCE FA BOUR DP YOUNG WT SAUNDERS M STEEDS JW
Citation: Fa. Ponce et al., DETERMINATION OF LATTICE POLARITY FOR GROWTH OF GAN BULK SINGLE-CRYSTALS AND EPITAXIAL LAYERS, Applied physics letters, 69(3), 1996, pp. 337-339
DIRECT IMAGING OF IMPURITY-INDUCED RAMAN-SCATTERING IN GAN
Authors: PONCE FA STEEDS JW DYER CD PITT GD
Citation: Fa. Ponce et al., DIRECT IMAGING OF IMPURITY-INDUCED RAMAN-SCATTERING IN GAN, Applied physics letters, 69(18), 1996, pp. 2650-2652
HOMOEPITAXY OF GAN ON POLISHED BULK SINGLE-CRYSTALS BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION
Authors: PONCE FA BOUR DP GOTZ W JOHNSON NM HELAVA HI GRZEGORY I JUN J
Citation: Fa. Ponce et al., HOMOEPITAXY OF GAN ON POLISHED BULK SINGLE-CRYSTALS BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 68(7), 1996, pp. 917-919
SPATIAL-DISTRIBUTION OF THE LUMINESCENCE IN GAN THIN-FILMS
Authors: PONCE FA BOUR DP GOTZ W WRIGHT PJ
Citation: Fa. Ponce et al., SPATIAL-DISTRIBUTION OF THE LUMINESCENCE IN GAN THIN-FILMS, Applied physics letters, 68(1), 1996, pp. 57-59
HIGH-QUALITY GAN HETEROEPITAXIAL FILMS GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION
Authors: FERTITTA KG HOLMES AL CIUBA FJ DUPUIS RD PONCE FA
Citation: Kg. Fertitta et al., HIGH-QUALITY GAN HETEROEPITAXIAL FILMS GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Journal of electronic materials, 24(4), 1995, pp. 257-261
MICROSTRUCTURE OF GAN EPITAXY ON SIC USING ALN BUFFER LAYERS
Authors: PONCE FA KRUSOR BS MAJOR JS PLANO WE WELCH DF
Citation: Fa. Ponce et al., MICROSTRUCTURE OF GAN EPITAXY ON SIC USING ALN BUFFER LAYERS, Applied physics letters, 67(3), 1995, pp. 410-412
HIGH DISLOCATION DENSITIES IN HIGH-EFFICIENCY GAN-BASED LIGHT-EMITTING-DIODES
Authors: LESTER SD PONCE FA CRAFORD MG STEIGERWALD DA
Citation: Sd. Lester et al., HIGH DISLOCATION DENSITIES IN HIGH-EFFICIENCY GAN-BASED LIGHT-EMITTING-DIODES, Applied physics letters, 66(10), 1995, pp. 1249-1251
DEFECT GENERATION AND SUPPRESSION DURING THE IMPURITY-INDUCED LAYER DISORDERING OF QUANTUM-SIZED GAAS GAINP LAYERS/
Authors: THORNTON RL BOUR DP TREAT D PONCE FA TRAMONTANA JC ENDICOTT FJ
Citation: Rl. Thornton et al., DEFECT GENERATION AND SUPPRESSION DURING THE IMPURITY-INDUCED LAYER DISORDERING OF QUANTUM-SIZED GAAS GAINP LAYERS/, Applied physics letters, 65(21), 1994, pp. 2696-2698
CRYSTALLINE-STRUCTURE OF ALGAN EPITAXY ON SAPPHIRE USING ALN BUFFER LAYERS
Authors: PONCE FA MAJOR JS PLANO WE WELCH DF
Citation: Fa. Ponce et al., CRYSTALLINE-STRUCTURE OF ALGAN EPITAXY ON SAPPHIRE USING ALN BUFFER LAYERS, Applied physics letters, 65(18), 1994, pp. 2302-2304
SELF-LIMITING OXIDATION FOR FABRICATING SUB-5 NM SILICON NANOWIRES
Authors: LIU HI BIEGELSEN DK PONCE FA JOHNSON NM PEASE RFW
Citation: Hi. Liu et al., SELF-LIMITING OXIDATION FOR FABRICATING SUB-5 NM SILICON NANOWIRES, Applied physics letters, 64(11), 1994, pp. 1383-1385
EPITAXIAL BATIO3 MGO STRUCTURE GROWN ON GAAS(100) BY PULSED-LASER DEPOSITION
Authors: NASHIMOTO K FORK DK PONCE FA TRAMONTANA JC
Citation: K. Nashimoto et al., EPITAXIAL BATIO3 MGO STRUCTURE GROWN ON GAAS(100) BY PULSED-LASER DEPOSITION, JPN J A P 1, 32(9B), 1993, pp. 4099-4102
SELF-LIMITING OXIDATION OF SI NANOWIRES
Authors: LIU HI BIEGELSEN DK JOHNSON NM PONCE FA PEASE RFW
Citation: Hi. Liu et al., SELF-LIMITING OXIDATION OF SI NANOWIRES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2532-2537
CRITICAL THICKNESS DETERMINATION OF INAS, INP AND GAP ON GAAS BY X-RAY INTERFERENCE EFFECT AND TRANSMISSION ELECTRON-MICROSCOPY
Authors: MAZUELAS A GONZALEZ L PONCE FA TAPFER L BRIONES F
Citation: A. Mazuelas et al., CRITICAL THICKNESS DETERMINATION OF INAS, INP AND GAP ON GAAS BY X-RAY INTERFERENCE EFFECT AND TRANSMISSION ELECTRON-MICROSCOPY, Journal of crystal growth, 131(3-4), 1993, pp. 465-469
STRAIN AND DEFECT GENERATION DURING INTERDIFFUSION OF GAAS INTO AL0.5IN0.5P
Authors: THORNTON RL PONCE FA ANDERSON GB ENDICOTT FJ
Citation: Rl. Thornton et al., STRAIN AND DEFECT GENERATION DURING INTERDIFFUSION OF GAAS INTO AL0.5IN0.5P, Applied physics letters, 62(17), 1993, pp. 2060-2062
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