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Results:
1-7
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Results: 7
Authors:
POPOK VN
ODZHAEV VB
KOZLOV IP
AZARKO II
KARPOVICH IA
SVIRIDOV DV
Citation: Vn. Popok et al., ION-BEAM EFFECTS IN POLYMER-FILMS - STRUCTURE EVOLUTION OF THE IMPLANTED LAYER, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 129(1), 1997, pp. 60-64
Authors:
ODZHAEV VB
POPOK VN
PROSOLOVICH VS
HNATOWICZ V
Citation: Vb. Odzhaev et al., BORON ELECTRICAL ACTIVATION IN DUAL B-IMPLANTED SILICON(+N+ AND B++AR+ ION), Applied physics A: Materials science & processing, 62(4), 1996, pp. 355-358
Authors:
KOZLOV IP
ODZHAEV VB
POPOK VN
HNATOWICZ V
Citation: Ip. Kozlov et al., ANNEALING OF RADIATION DEFECTS IN DUAL-IMPLANTED SILICON, Semiconductor science and technology, 11(5), 1996, pp. 722-725
Authors:
ODZHAEV VB
AZARKO II
KARPOVICH IA
KOZLOV IP
POPOK VN
SVIRIDOV DV
HNATOWICZ V
JANKOVSKIJ ON
RYBKA V
SVORCIK V
Citation: Vb. Odzhaev et al., THE PROPERTIES OF POLYETHYLENE AND POLYAMIDE IMPLANTED WITH B-DOSES( IONS TO HIGH), Materials letters, 23(1-3), 1995, pp. 163-166
Authors:
AZARKO II
KARPOVICH IA
KOZLOV IP
KOZLOVA EI
ODZHAEV VB
POPOK VN
HNATOWICZ V
Citation: Ii. Azarko et al., INFLUENCE OF ION-IMPLANTATION ON THE PROPERTIES OF POLYMER-FILMS, Solid state communications, 95(1), 1995, pp. 49-51
Authors:
ODZHAEV VB
POPOK VN
CERVENA J
HNATOWICZ VI
KVITEK J
VACIK J
Citation: Vb. Odzhaev et al., DEPTH DISTRIBUTION OF BORON AND RADIATION DEFECTS IN SILICON DUAL IMPLANTED WITHG B+ AND N+ IONS, Physica status solidi. a, Applied research, 147(1), 1995, pp. 91-97
Authors:
AZARKO II
HNATOWICZ V
KOZLOV IP
KOZLOVA EI
ODZHAEV VB
POPOK VN
Citation: Ii. Azarko et al., EPR SPECTROSCOPY OF ION-IMPLANTED POLYMER-FILMS, Physica status solidi. a, Applied research, 146(2), 1994, pp. 23-27
Risultati:
1-7
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