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Results:
1-15
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Results: 15
Authors:
PULFREY DL
NENER BD
Citation: Dl. Pulfrey et Bd. Nener, SUGGESTIONS FOR THE DEVELOPMENT OF GAN-BASED PHOTODIODES, Solid-state electronics, 42(9), 1998, pp. 1731-1736
Authors:
TSOU BPC
PULFREY DL
Citation: Bpc. Tsou et Dl. Pulfrey, THE INFLUENCE OF COULOMB ENHANCEMENT ON THE MODULATION PROPERTIES OF QUANTUM-WELL LASERS, IEEE journal of quantum electronics, 34(2), 1998, pp. 318-324
Authors:
VAIDYANATHAN M
PULFREY DL
Citation: M. Vaidyanathan et Dl. Pulfrey, EFFECTS OF QUASI-BALLISTIC BASE TRANSPORT ON THE HIGH-FREQUENCY CHARACTERISTICS OF BIPOLAR-TRANSISTORS, I.E.E.E. transactions on electron devices, 44(4), 1997, pp. 618-626
Authors:
SEARLES S
PULFREY DL
KLECKNER TC
Citation: S. Searles et al., ANALYTICAL EXPRESSIONS FOR THE TUNNEL CURRENT AT ABRUPT SEMICONDUCTOR-SEMICONDUCTOR HETEROJUNCTIONS, I.E.E.E. transactions on electron devices, 44(11), 1997, pp. 1851-1856
Authors:
TSOU BPC
PULFREY DL
Citation: Bpc. Tsou et Dl. Pulfrey, A VERSATILE SPICE MODEL FOR QUANTUM-WELL LASERS, IEEE journal of quantum electronics, 33(2), 1997, pp. 246-254
Authors:
VAIDYANATHAN M
PULFREY DL
Citation: M. Vaidyanathan et Dl. Pulfrey, AN APPRAISAL OF THE ONE-FLUX METHOD FOR TREATING CARRIER TRANSPORT INMODERN SEMICONDUCTOR-DEVICES, Solid-state electronics, 39(6), 1996, pp. 827-832
Authors:
SEARLES S
PULFREY DL
Citation: S. Searles et Dl. Pulfrey, THE INFLUENCE OF A TRANSVERSE-EFFECTIVE-MASS DIFFERENCE ON THE CURRENT AT AN ABRUPT HETEROJUNCTION, Journal of applied physics, 79(8), 1996, pp. 4203-4210
Authors:
WINTERTON SS
SEARLES S
PETERS CJ
TARR NG
PULFREY DL
Citation: Ss. Winterton et al., DISTRIBUTION OF BASE DOPANT FOR TRANSIT-TIME MINIMIZATION IN A BIPOLAR-TRANSISTOR, I.E.E.E. transactions on electron devices, 43(1), 1996, pp. 170-172
Authors:
DENIS AS
PULFREY DL
Citation: As. Denis et Dl. Pulfrey, AN ANALYTICAL EXPRESSION FOR THE CURRENT IN SHORT-BASE TRANSISTORS, Solid-state electronics, 38(8), 1995, pp. 1431-1436
Authors:
GHODSIAN B
PULFREY DL
ABID Z
MCALISTER SP
Citation: B. Ghodsian et al., ON THE DESIGN OF COMPOSITE-COLLECTOR HBTS, Solid-state electronics, 38(6), 1995, pp. 1275-1278
Authors:
FENG JJX
PULFREY DL
SITCH J
SURRIDGE R
Citation: Jjx. Feng et al., A PHYSICS-BASED HBT SPICE MODEL FOR LARGE-SIGNAL APPLICATIONS, I.E.E.E. transactions on electron devices, 42(1), 1995, pp. 8-14
Authors:
SEARLES S
PULFREY DL
Citation: S. Searles et Dl. Pulfrey, AN ANALYSIS OF SPACE-CHARGE-REGION RECOMBINATION IN HBTS, I.E.E.E. transactions on electron devices, 41(4), 1994, pp. 476-483
Authors:
MARTY A
CAMPS T
TASSELLI J
PULFREY DL
BAILBE JP
Citation: A. Marty et al., A SELF-CONSISTENT DC-AC 2-DIMENSIONAL ELECTROTHERMAL MODEL FOR GAALASGAAS MICROWAVE-POWER HBTS/, I.E.E.E. transactions on electron devices, 40(7), 1993, pp. 1202-1210
Authors:
PULFREY DL
SEARLES S
Citation: Dl. Pulfrey et S. Searles, ELECTRON QUASI-FERMI LEVEL SPLITTING AT THE BASE EMITTER JUNCTION OF ALGAAS GAAS HBTS/, I.E.E.E. transactions on electron devices, 40(6), 1993, pp. 1183-1185
Authors:
LIU QZ
PULFREY DL
JACKSON MK
Citation: Qz. Liu et al., ANALYSIS OF THE TRANSISTOR-RELATED NOISE IN INTEGRATED P-I-N-HBT OPTICAL RECEIVER FRONT-ENDS, I.E.E.E. transactions on electron devices, 40(12), 1993, pp. 2204-2210
Risultati:
1-15
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