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Results: 1-9 |
Results: 9
DONOR-ACCEPTOR RECOMBINATION IN TYPE-II GAAS ALAS SUPERLATTICES/
Authors: ZHURAVLEV KS GILINSKII AM SHAMIRZAEV TS PREOBRAZHENSKII VV SEMYAGIN BR PUTYATO MA CHIPKIN SS
Citation: Ks. Zhuravlev et al., DONOR-ACCEPTOR RECOMBINATION IN TYPE-II GAAS ALAS SUPERLATTICES/, Physics of the solid state, 40(9), 1998, pp. 1577-1581
INDIUM LAYERS IN LOW-TEMPERATURE GALLIUM-ARSENIDE - STRUCTURE AND HOWIT CHANGES UNDER ANNEALING IN THE TEMPERATURE-RANGE 500-700-DEGREES-C
Authors: BERT NA SUVOROVA AA CHALDYSHEV VV MUSIKHIN YG PREOBRAZHENSKII VV PUTYATO MA SEMYAGIN BR WERNER R
Citation: Na. Bert et al., INDIUM LAYERS IN LOW-TEMPERATURE GALLIUM-ARSENIDE - STRUCTURE AND HOWIT CHANGES UNDER ANNEALING IN THE TEMPERATURE-RANGE 500-700-DEGREES-C, Semiconductors (Woodbury, N.Y.), 32(7), 1998, pp. 683-688
EFFECT OF ISOVALENT INDIUM DOPING ON EXCESS ARSENIC IN GALLIUM-ARSENIDE GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURES
Authors: CHALDYSHEV VV KUNITSYN AE TRETYAKOV VV FALEEV NN PREOBRAZHENSKII VV PUTYATO MA SEMYAGIN BR
Citation: Vv. Chaldyshev et al., EFFECT OF ISOVALENT INDIUM DOPING ON EXCESS ARSENIC IN GALLIUM-ARSENIDE GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURES, Semiconductors (Woodbury, N.Y.), 32(7), 1998, pp. 692-695
ARSENIC CLUSTER SUPERLATTICE IN GALLIUM-ARSENIDE GROWN BY LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY
Authors: CHALDYSHEV VV PREOBRAZHENSKII VV PUTYATO MA SEMYAGIN BR BERT NA KUNITSYN AE MUSIKHIN YG TRETYAKOV VV WERNER P
Citation: Vv. Chaldyshev et al., ARSENIC CLUSTER SUPERLATTICE IN GALLIUM-ARSENIDE GROWN BY LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY, Semiconductors (Woodbury, N.Y.), 32(10), 1998, pp. 1036-1039
ACCUMULATION OF ELECTRONS IN GAAS-LAYERS GROWN AT LOW-TEMPERATURES AND CONTAINING ARSENIC CLUSTERS
Authors: BRUNKOV PN CHALDYSHEV VV BERT NA SUVOROVA AA KONNIKOV SG CHERNIGOVSKII AV PREOBRAZHENSKII VV PUTYATO MA SEMYAGIN BR
Citation: Pn. Brunkov et al., ACCUMULATION OF ELECTRONS IN GAAS-LAYERS GROWN AT LOW-TEMPERATURES AND CONTAINING ARSENIC CLUSTERS, Semiconductors (Woodbury, N.Y.), 32(10), 1998, pp. 1044-1047
HIGH-RESOLUTION X-RAY-DIFFRACTION STUDY OF INAS-GAAS SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURE
Authors: FALEEV NN CHALDYSHEV VV KUNITSYN AE TRETYAKOV VV PREOBRAZHENSKII VV PUTYATO MA SEMYAGIN BR
Citation: Nn. Faleev et al., HIGH-RESOLUTION X-RAY-DIFFRACTION STUDY OF INAS-GAAS SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURE, Semiconductors, 32(1), 1998, pp. 19-25
BISTABILITY OF CHARGE ACCUMULATED IN LOW-TEMPERATURE-GROWN GAAS
Authors: BROUNKOV PN CHALDYSHEV VV SUVOROVA AA BERT NA KONNIKOV SG CHERNIGOVSKII AV PREOBRAZHENSKII VV PUTYATO MA SEMYAGIN BR
Citation: Pn. Brounkov et al., BISTABILITY OF CHARGE ACCUMULATED IN LOW-TEMPERATURE-GROWN GAAS, Applied physics letters, 73(19), 1998, pp. 2796-2798
OSTWALD RIPENING IN 2-DIMENSIONAL AND 3-DIMENSIONAL SYSTEMS OF AS CLUSTERS IN LOW-TEMPERATURE-GROWN GAAS FILMS
Authors: CHALDYSHEV VV BERT NA PREOBRAZHENSKII VV PUTYATO MA SEMYAGIN BR
Citation: Vv. Chaldyshev et al., OSTWALD RIPENING IN 2-DIMENSIONAL AND 3-DIMENSIONAL SYSTEMS OF AS CLUSTERS IN LOW-TEMPERATURE-GROWN GAAS FILMS, Materials science & engineering. A, Structural materials: properties, microstructure and processing, 238(1), 1997, pp. 148-151
ENHANCED ARSENIC EXCESS IN LOW-TEMPERATURE-GROWN GAAS DUE TO INDIUM DOPING
Authors: BERT NA CHALDYSHEV VV KUNITSYN AE MUSIKHIN YG FALEEV NN TRETYAKOV VV PREOBRAZHENSKII VV PUTYATO MA SEMYAGIN BR
Citation: Na. Bert et al., ENHANCED ARSENIC EXCESS IN LOW-TEMPERATURE-GROWN GAAS DUE TO INDIUM DOPING, Applied physics letters, 70(23), 1997, pp. 3146-3148
Risultati: 1-9 |