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Results:
1-17
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Results: 17
Authors:
Paillet, P
Vedda, A
Autran, JL
Spinolo, G
Citation: P. Paillet et al., SiO2 and advanced dielectrics 3 - Proceedings of the 3rd Symposium on SiO2and Advanced Dielectrics - Fuveau (Aix-Marseille), France June 19-21, 2000- Preface, J NON-CRYST, 280(1-3), 2001, pp. VII-VII
Authors:
Courtot-Descharles, A
Paillet, P
Leray, JL
Musseau, O
Citation: A. Courtot-descharles et al., First principles calculations of hydrogen annealed amorphous SiO2 structures and Si/SiO2 interface for non volatile memories, MAT SC S PR, 3(1-2), 2000, pp. 143-148
Authors:
Schwank, JR
Shaneyfelt, MR
Dodd, PE
Ferlet-Cavrois, V
Loemker, RA
Winokur, PS
Fleetwood, DM
Paillet, P
Leray, JL
Draper, BL
Witczak, SC
Riewe, LC
Citation: Jr. Schwank et al., Correlation between Co-60 and X-ray radiation-induced charge buildup in silicon-on-insulator buried oxides, IEEE NUCL S, 47(6), 2000, pp. 2175-2182
Authors:
Ferlet-Cavrois, V
Colladant, T
Paillet, P
Leray, JL
Musseau, O
Schwank, JR
Shaneyfelt, MR
Pelloie, JL
de Poncharra, JD
Citation: V. Ferlet-cavrois et al., Worst-case bias during total dose irradiation of SOI transistors, IEEE NUCL S, 47(6), 2000, pp. 2183-2188
Authors:
Ferlet-Cavrois, V
Paillet, P
Musseau, O
Leray, JL
Faynot, O
Raynaud, C
Pelloie, JL
Citation: V. Ferlet-cavrois et al., Total dose behavior of partially depleted SOI dynamic threshold voltage MOS (DTMOS) for very low supply voltage applications (0.6-1V), IEEE NUCL S, 47(3), 2000, pp. 613-619
Authors:
Leray, JL
Paillet, P
Ferlet-Cavrois, V
Tavernier, C
Belhaddad, K
Penzin, O
Citation: Jl. Leray et al., Impact of technology scaling in SOI back-channel total dose tolerance. A 2-C numerical study using self-consistent oxide code, IEEE NUCL S, 47(3), 2000, pp. 620-626
Authors:
Courtot-Descharles, A
Pires, F
Paillet, P
Leray, JL
Citation: A. Courtot-descharles et al., Density functional theory applied to the calculation of dielectric constant of low-k materials (vol 39, pg 279, 1999), MICROEL REL, 39(4), 1999, pp. 549-549
Authors:
Courtot-Descharles, A
Pires, F
Paillet, P
Leray, JL
Citation: A. Courtot-descharles et al., Density functional theory applied to the calculation of dielectric constant of low-k materials, MICROEL REL, 39(2), 1999, pp. 279-284
Authors:
Courtot-Descharles, A
Paillet, P
Leray, JL
Citation: A. Courtot-descharles et al., Theoretical study using density functional theory of defects in amorphous silicon dioxide, J NON-CRYST, 245, 1999, pp. 154-160
Authors:
Fleetwood, DM
Winokur, PS
Riewe, LC
Flament, O
Paillet, P
Leray, JL
Citation: Dm. Fleetwood et al., The role of electron transport and trapping in MOS total-dose modeling, IEEE NUCL S, 46(6), 1999, pp. 1519-1525
Authors:
Flament, O
Paillet, P
Leray, JL
Fleetwood, DM
Citation: O. Flament et al., Considerations on isochronal anneal technique: from measurement to physics, IEEE NUCL S, 46(6), 1999, pp. 1526-1533
Authors:
Paillet, P
Citation: P. Paillet, The frieze sculpture in Roc-aux-Sorciers, Angles sur l'Anglin (Vienna), ANTHROPOLOG, 103(1), 1999, pp. 194-195
Authors:
Paillet, P
Leray, JL
Citation: P. Paillet et Jl. Leray, Defects and radiation-induced charge-trapping phenomena in SiO2, INSTABILITIES IN SILICON DEVICES, VOL 3, 1999, pp. 723-780
Authors:
Fleetwood, DM
Winokur, PS
Shaneyfelt, MR
Riewe, LC
Flament, O
Paillet, P
Leray, JL
Citation: Dm. Fleetwood et al., Effects of isochronal annealing and irradiation temperature on radiation-induced trapped charge, IEEE NUCL S, 45(6), 1998, pp. 2366-2374
Authors:
Paillet, P
Citation: P. Paillet, The Cambridge illustrated history of prehistoric art, ANTHROPOLOG, 102(3), 1998, pp. 335-336
Authors:
Paillet, P
Citation: P. Paillet, Prehistoric art, ANTHROPOLOG, 102(3), 1998, pp. 335-335
Authors:
Paillet, P
Citation: P. Paillet, Paleolithic rock art in the Duero Basin: Siega Verde et Foz Coa, ANTHROPOLOG, 102(3), 1998, pp. 336-336
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1-17
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