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Results: 1-7 |
Results: 7
Simulation of power heterojunction bipolar transistors on gallium arsenide
Authors: Palankovski, V Schultheis, R Selberherr, S
Citation: V. Palankovski et al., Simulation of power heterojunction bipolar transistors on gallium arsenide, IEEE DEVICE, 48(6), 2001, pp. 1264-1269
Nonlinear electronic transport and device performance of HEMTs
Authors: Quay, R Hess, K Reuter, R Schlechtweg, M Grave, T Palankovski, V Selberherr, S
Citation: R. Quay et al., Nonlinear electronic transport and device performance of HEMTs, IEEE DEVICE, 48(2), 2001, pp. 210-217
A methodology for deep sub-0.25 mu m CMOS technology prediction
Authors: Palankovski, V Belova, N Grasser, T Puchner, H Aronowitz, S Selberherr, S
Citation: V. Palankovski et al., A methodology for deep sub-0.25 mu m CMOS technology prediction, IEEE DEVICE, 48(10), 2001, pp. 2331-2336
Industrial application of heterostructure device simulation
Authors: Palankovski, V Quay, R Selberherr, S
Citation: V. Palankovski et al., Industrial application of heterostructure device simulation, IEEE J SOLI, 36(9), 2001, pp. 1365-1370
A temperature dependent model for the saturation velocity in semiconductormaterials
Authors: Quay, R Moglestue, C Palankovski, V Selberherr, S
Citation: R. Quay et al., A temperature dependent model for the saturation velocity in semiconductormaterials, MAT SC S PR, 3(1-2), 2000, pp. 149-155
Study of dopant-dependent band gap narrowing in compound semiconductor devices
Authors: Palankovski, V Kaiblinger-Grujin, G Selberherr, S
Citation: V. Palankovski et al., Study of dopant-dependent band gap narrowing in compound semiconductor devices, MAT SCI E B, 66(1-3), 1999, pp. 46-49
An energy relaxation time model for device simulation
Authors: Gonzalez, B Palankovski, V Kosina, H Hernandez, A Selberherr, S
Citation: B. Gonzalez et al., An energy relaxation time model for device simulation, SOL ST ELEC, 43(9), 1999, pp. 1791-1795
Risultati: 1-7 |