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Results: 1-19 |
Results: 19
Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide
Authors: Chung, GY Tin, CC Williams, JR McDonald, K Chanana, RK Weller, RA Pantelides, ST Feldman, LC Holland, OW Das, MK Palmour, JW
Citation: Gy. Chung et al., Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide, IEEE ELEC D, 22(4), 2001, pp. 176-178
1800 V NPN bipolar junction transistors in 4H-SiC
Authors: Ryu, SH Agarwal, AK Singh, R Palmour, JW
Citation: Sh. Ryu et al., 1800 V NPN bipolar junction transistors in 4H-SiC, IEEE ELEC D, 22(3), 2001, pp. 124-126
3100 V, asymmetrical, gate turn-off (GTO) thyristors in 4H-SiC
Authors: Ryu, SH Agarwal, AK Singh, R Palmour, JW
Citation: Sh. Ryu et al., 3100 V, asymmetrical, gate turn-off (GTO) thyristors in 4H-SiC, IEEE ELEC D, 22(3), 2001, pp. 127-129
Transient characteristics of a 1.8 kV, 3.8 A 4H-SiC bipolar junction transistor
Authors: Ivanov, PA Levinshtein, ME Agarwal, AK Palmour, JW
Citation: Pa. Ivanov et al., Transient characteristics of a 1.8 kV, 3.8 A 4H-SiC bipolar junction transistor, SEMIC SCI T, 16(6), 2001, pp. 521-525
Turn-off performance of 2.6 kV 4H-SiC asymmetrical GTO thyristor
Authors: Agarwal, AK Ivanov, PA Levinshtein, ME Palmour, JW Rumyantsev, SL Ryu, SH
Citation: Ak. Agarwal et al., Turn-off performance of 2.6 kV 4H-SiC asymmetrical GTO thyristor, SEMIC SCI T, 16(4), 2001, pp. 260-262
Temperature dependence of turn-on processes in 4H-SiC thyristors
Authors: Levinshtein, ME Mnatsakanov, TT Ivanov, PA Agarwal, AK Palmour, JW Rumyantsev, SL Tandoev, AG Yurkov, SN
Citation: Me. Levinshtein et al., Temperature dependence of turn-on processes in 4H-SiC thyristors, SOL ST ELEC, 45(3), 2001, pp. 453-459
Low-dose aluminum and boron implants in 4H and 6H silicon carbide
Authors: Saks, NS Agarwal, AK Ryu, SH Palmour, JW
Citation: Ns. Saks et al., Low-dose aluminum and boron implants in 4H and 6H silicon carbide, J APPL PHYS, 90(6), 2001, pp. 2796-2805
"Paradoxes" of carrier lifetime measurements in high-voltage SiC diodes
Authors: Levinshtein, ME Mnatsakanov, TT Ivanov, P Palmour, JW Rumyantsev, SL Singh, R Yurkov, SN
Citation: Me. Levinshtein et al., "Paradoxes" of carrier lifetime measurements in high-voltage SiC diodes, IEEE DEVICE, 48(8), 2001, pp. 1703-1710
'Classical' current-voltage characteristics of 4H-SiC p(+)-n junction diodes
Authors: Ivanov, PA Levinshtein, ME Palmour, JW Rumyantsev, SL Singh, R
Citation: Pa. Ivanov et al., 'Classical' current-voltage characteristics of 4H-SiC p(+)-n junction diodes, SEMIC SCI T, 15(9), 2000, pp. 908-910
Noise spectroscopy of local surface levels in semiconductors
Authors: Ivanov, PA Levinshtein, ME Palmour, JW Rumyantsev, SL
Citation: Pa. Ivanov et al., Noise spectroscopy of local surface levels in semiconductors, SEMIC SCI T, 15(2), 2000, pp. 164-168
Turn-off operation of a MOS-gate 2.6 kV 4H-SiC gate turn-off thyristor
Authors: Ivanov, PA Levinshtein, ME Rumyantsev, SL Agarwal, AK Palmour, JW
Citation: Pa. Ivanov et al., Turn-off operation of a MOS-gate 2.6 kV 4H-SiC gate turn-off thyristor, SOL ST ELEC, 44(12), 2000, pp. 2155-2159
High voltage SiC diodes with small recovery time
Authors: Levinshtein, ME Mnatsakanov, TT Ivanov, PA Palmour, JW Rumyantsev, SL Singh, R Yurkov, SN
Citation: Me. Levinshtein et al., High voltage SiC diodes with small recovery time, ELECTR LETT, 36(14), 2000, pp. 1241-1242
Progress in SiC: from material growth to commercial device development
Authors: Carter, CH Tsvetkov, VF Glass, RC Henshall, D Brady, M Muller, SG Kordina, O Irvine, K Edmond, JA Kong, HS Singh, R Allen, ST Palmour, JW
Citation: Ch. Carter et al., Progress in SiC: from material growth to commercial device development, MAT SCI E B, 61-2, 1999, pp. 1-8
High-power microwave GaN/AlGaN HEMT's on semi-insulating silicon carbide substrates
Authors: Sheppard, ST Doverspike, K Pribble, WL Allen, ST Palmour, JW Kehias, LT Jenkins, TJ
Citation: St. Sheppard et al., High-power microwave GaN/AlGaN HEMT's on semi-insulating silicon carbide substrates, IEEE ELEC D, 20(4), 1999, pp. 161-163
Frequency properties of 4H-SiC thyristors at high current density
Authors: Levinshtein, ME Palmour, JW Rumyantsev, SL Singh, R
Citation: Me. Levinshtein et al., Frequency properties of 4H-SiC thyristors at high current density, SEMIC SCI T, 14(2), 1999, pp. 207-209
Special issue on silicon carbide electronic devices - Foreword
Authors: Cooper, JA Agarwal, AK Hara, K Palmour, JW Stephani, D
Citation: Ja. Cooper et al., Special issue on silicon carbide electronic devices - Foreword, IEEE DEVICE, 46(3), 1999, pp. 442-443
Insulator investigation on SiC for improved reliability
Authors: Lipkin, LA Palmour, JW
Citation: La. Lipkin et Jw. Palmour, Insulator investigation on SiC for improved reliability, IEEE DEVICE, 46(3), 1999, pp. 525-532
Steady-state and transient forward current-voltage characteristics of 4H-silicon carbide 5.5 kV diodes at high and superhigh current densities
Authors: Dyakonova, NV Ivanov, PA Kozlov, VA Levinshtein, ME Palmour, JW Rumyantsev, SL Singh, R
Citation: Nv. Dyakonova et al., Steady-state and transient forward current-voltage characteristics of 4H-silicon carbide 5.5 kV diodes at high and superhigh current densities, IEEE DEVICE, 46(11), 1999, pp. 2188-2194
High hole lifetime (3.8 mu s) in 4H-SiC diodes with 5.5kV blocking voltage
Authors: Ivanov, PA Levinshtein, ME Irvine, KG Kordina, O Palmour, JW Rumyantsev, SL Singh, R
Citation: Pa. Ivanov et al., High hole lifetime (3.8 mu s) in 4H-SiC diodes with 5.5kV blocking voltage, ELECTR LETT, 35(16), 1999, pp. 1382-1383
Risultati: 1-19 |