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Results: 1-18 |
Results: 18
Gallium nitride based transistors
Authors: Xing, H Keller, S Wu, YF McCarthy, L Smorchkova, IP Buttari, D Coffie, R Green, DS Parish, G Heikman, S Shen, L Zhang, N Xu, JJ Keller, BP DenBaars, SP Mishra, UK
Citation: H. Xing et al., Gallium nitride based transistors, J PHYS-COND, 13(32), 2001, pp. 7139-7157
High UV/solar rejection ratios in GaN/AlGaN/GaN p-i-n photodiodes
Authors: Pulfrey, DL Kuek, JJ Leslie, MP Nener, BD Parish, G Mishra, UK Kozodoy, P Tarsa, EJ
Citation: Dl. Pulfrey et al., High UV/solar rejection ratios in GaN/AlGaN/GaN p-i-n photodiodes, IEEE DEVICE, 48(3), 2001, pp. 486-489
Gallium nitride based high power heterojunction field effect transistors: Process development and present status at UCSB
Authors: Keller, S Wu, YF Parish, G Ziang, NQ Xu, JJ Keller, BP DenBaars, SP Mishra, UK
Citation: S. Keller et al., Gallium nitride based high power heterojunction field effect transistors: Process development and present status at UCSB, IEEE DEVICE, 48(3), 2001, pp. 552-559
Effect of growth termination conditions on the performance of AlGaN/GaN high electron mobility transistors
Authors: Keller, S Vetury, R Parish, G DenBaars, SP Mishra, UK
Citation: S. Keller et al., Effect of growth termination conditions on the performance of AlGaN/GaN high electron mobility transistors, APPL PHYS L, 78(20), 2001, pp. 3088-3090
High breakdown GaNHEMT with overlapping gate structure
Authors: Zhang, NQ Keller, S Parish, G Heikman, S DenBaars, SP Mishra, UK
Citation: Nq. Zhang et al., High breakdown GaNHEMT with overlapping gate structure, IEEE ELEC D, 21(9), 2000, pp. 421-423
SIMS investigations into the effect of growth conditions on residual impurity and silicon incorporation in GaN and AlxGa1-xN
Authors: Parish, G Keller, S Denbaars, SP Mishra, UK
Citation: G. Parish et al., SIMS investigations into the effect of growth conditions on residual impurity and silicon incorporation in GaN and AlxGa1-xN, J ELEC MAT, 29(1), 2000, pp. 15-20
Anomalous drain current-voltage characteristics in AlGaN/GaN MODFETs at low temperatures
Authors: Umana-Membreno, GA Dell, JM Faraone, L Wu, YF Parish, G Mishra, UK
Citation: Ga. Umana-membreno et al., Anomalous drain current-voltage characteristics in AlGaN/GaN MODFETs at low temperatures, MICROELEC J, 31(7), 2000, pp. 531-536
Scattering mechanisms limiting two-dimensional electron gas mobility in Al0.25Ga0.75N/GaN modulation-doped field-effect transistors
Authors: Antoszewski, J Gracey, M Dell, JM Faraone, L Fisher, TA Parish, G Wu, YF Mishra, UK
Citation: J. Antoszewski et al., Scattering mechanisms limiting two-dimensional electron gas mobility in Al0.25Ga0.75N/GaN modulation-doped field-effect transistors, J APPL PHYS, 87(8), 2000, pp. 3900-3904
A 3-10-GHz GaN-based flip-chip integrated broad-band power amplifier
Authors: Xu, JJ Keller, S Parish, G Heikman, S Mishra, UK York, RA
Citation: Jj. Xu et al., A 3-10-GHz GaN-based flip-chip integrated broad-band power amplifier, IEEE MICR T, 48(12), 2000, pp. 2573-2578
Solar-blind AlGaN-based inverted heterostructure photodiodes
Authors: Tarsa, EJ Kozodoy, P Ibbetson, J Keller, BP Parish, G Mishra, U
Citation: Ej. Tarsa et al., Solar-blind AlGaN-based inverted heterostructure photodiodes, APPL PHYS L, 77(3), 2000, pp. 316-318
Dislocation reduction in GaN films through selective island growth of InGaN
Authors: Keller, S Parish, G Speck, JS DenBaars, SP Mishra, UK
Citation: S. Keller et al., Dislocation reduction in GaN films through selective island growth of InGaN, APPL PHYS L, 77(17), 2000, pp. 2665-2667
1-8-GHz GaN-based power amplifier using flip-chip bonding
Authors: Xu, JJ Wu, YF Keller, S Parish, G Heikman, S Thibeault, BJ Mishra, UK York, RA
Citation: Jj. Xu et al., 1-8-GHz GaN-based power amplifier using flip-chip bonding, IEEE MICR G, 9(7), 1999, pp. 277-279
Hypoxic modulation of manganese superoxide dismutase promoter activity andgene expression in lung epithelial cells
Authors: Ohman, T Parish, G Jackson, RM
Citation: T. Ohman et al., Hypoxic modulation of manganese superoxide dismutase promoter activity andgene expression in lung epithelial cells, AM J RESP C, 21(1), 1999, pp. 119-127
Towards an AlGaN, solar-blind, p-i-n photodetector
Authors: Pulfrey, DL Kuek, JJ Nener, BD Parish, G Mishra, UK Tarsa, EJ
Citation: Dl. Pulfrey et al., Towards an AlGaN, solar-blind, p-i-n photodetector, PHYS ST S-A, 176(1), 1999, pp. 169-173
Metalorganic chemical vapor deposition of high mobility AlGaN/GaN heterostructures
Authors: Keller, S Parish, G Fini, PT Heikman, S Chen, CH Zhang, N DenBaars, SP Mishra, UK Wu, YF
Citation: S. Keller et al., Metalorganic chemical vapor deposition of high mobility AlGaN/GaN heterostructures, J APPL PHYS, 86(10), 1999, pp. 5850-5857
AlGaN GaN dual-gate modulation-doped field-effect transistors
Authors: Chen, CH Krishnamurthy, K Keller, S Parish, G Rodwell, M Mishra, UK Wu, YF
Citation: Ch. Chen et al., AlGaN GaN dual-gate modulation-doped field-effect transistors, ELECTR LETT, 35(11), 1999, pp. 933-935
Peroxynitrite modulates manganese-containing superoxide dismutase gene expression in lung epithelial cells
Authors: Jackson, RM Parish, G Helton, E
Citation: Rm. Jackson et al., Peroxynitrite modulates manganese-containing superoxide dismutase gene expression in lung epithelial cells, CHEST, 116(1), 1999, pp. 100S-101S
High-performance (Al,Ga)N-based solar-blind ultraviolet p-i-n detectors onlaterally epitaxially overgrown GaN
Authors: Parish, G Keller, S Kozodoy, P Ibbetson, JP Marchand, H Fini, PT Fleischer, SB DenBaars, SP Mishra, UK Tarsa, EJ
Citation: G. Parish et al., High-performance (Al,Ga)N-based solar-blind ultraviolet p-i-n detectors onlaterally epitaxially overgrown GaN, APPL PHYS L, 75(2), 1999, pp. 247-249
Risultati: 1-18 |