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Results: 1-9 |
Results: 9
Deformation in the Guerrero seismic gap, Mexico, from leveling observations
Authors: Kostoglodov, V Valenzuela, RW Gorbatov, A Mimiaga, J Franco, SI Alvarado, JA Pelaez, R
Citation: V. Kostoglodov et al., Deformation in the Guerrero seismic gap, Mexico, from leveling observations, J GEODESY, 75(1), 2001, pp. 19-32
Synthesis of imidazo[4,5-d]oxazolo[3,4-a]pyridines. New heterocyclic analogues of lignans
Authors: Madrigal, B Puebla, P Caballero, E Pelaez, R Gravalos, DG Medarde, M
Citation: B. Madrigal et al., Synthesis of imidazo[4,5-d]oxazolo[3,4-a]pyridines. New heterocyclic analogues of lignans, ARCH PHARM, 334(5), 2001, pp. 177-179
Heterolignanolides, Furo- and thieno-analogues of podophyllotoxin and thuriferic acid
Authors: Ramos, AC Pelaez, R Lopez, JL Caballero, E Medarde, M Feliciano, AS
Citation: Ac. Ramos et al., Heterolignanolides, Furo- and thieno-analogues of podophyllotoxin and thuriferic acid, TETRAHEDRON, 57(18), 2001, pp. 3963-3977
Electrical characterization of ECR enhaced deposited silicon nitride bilayers for high quality Al/SiNx/InP MIS structure fabrication
Authors: Duenas, S Pelaez, R Castan, E Pinacho, R Quintanilla, L Barbolla, J Martil, I Redondo, E Gonzalez-Diaz, G
Citation: S. Duenas et al., Electrical characterization of ECR enhaced deposited silicon nitride bilayers for high quality Al/SiNx/InP MIS structure fabrication, J MAT S-M E, 10(5-6), 1999, pp. 373-377
Electrical characterization of deep levels existing in fully implanted andrapid thermal annealed p(+)n InP junctions
Authors: Quintanilla, L Duenas, S Castan, E Pinacho, R Pelaez, R Barbolla, J
Citation: L. Quintanilla et al., Electrical characterization of deep levels existing in fully implanted andrapid thermal annealed p(+)n InP junctions, J MAT S-M E, 10(5-6), 1999, pp. 413-418
Thermally induced improvements on SiNx : H/InP devices
Authors: Redondo, E Blanco, N Martil, I Gonzalez-Diaz, G Pelaez, R Deunas, S Castan, H
Citation: E. Redondo et al., Thermally induced improvements on SiNx : H/InP devices, J VAC SCI A, 17(4), 1999, pp. 2178-2182
Electrical characterization of He-ion implantation-induced deep levels in p(+)n InP junctions
Authors: Quintanilla, L Pinacho, R Enriquez, L Pelaez, R Duenas, S Castan, E Bailon, L Barbolla, J
Citation: L. Quintanilla et al., Electrical characterization of He-ion implantation-induced deep levels in p(+)n InP junctions, J APPL PHYS, 86(9), 1999, pp. 4855-4860
Electrical characterization of electron cyclotron resonance deposited silicon nitride dual layer for enhanced Al/SiNx : H/InP metal-insulator-semiconductor structures fabrication
Authors: Pelaez, R Castan, E Duenas, S Barbolla, J Redondo, E Martil, I Gonzalez-Diaz, G
Citation: R. Pelaez et al., Electrical characterization of electron cyclotron resonance deposited silicon nitride dual layer for enhanced Al/SiNx : H/InP metal-insulator-semiconductor structures fabrication, J APPL PHYS, 86(12), 1999, pp. 6924-6930
Electrical characterization of a He ion implantation-induced induced deep level existing in p plus n InP junctions
Authors: Quintanilla, L Pinacho, R Enriquez, L Pelaez, R Duenas, S Castan, E Bailon, L Barbolla, J
Citation: L. Quintanilla et al., Electrical characterization of a He ion implantation-induced induced deep level existing in p plus n InP junctions, J APPL PHYS, 85(11), 1999, pp. 7978-7980
Risultati: 1-9 |