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Results: 1-14 |
Results: 14
Copper gettering by aluminum precipitates in aluminum-implanted silicon
Authors: Petersen, GA Myers, SM
Citation: Ga. Petersen et Sm. Myers, Copper gettering by aluminum precipitates in aluminum-implanted silicon, J APPL PHYS, 89(8), 2001, pp. 4269-4274
Diffusion, release, and uptake of hydrogen in magnesium-doped gallium nitride: Theory and experiment
Authors: Myers, SM Wright, AF Petersen, GA Wampler, WR Seager, CH Crawford, MH Han, J
Citation: Sm. Myers et al., Diffusion, release, and uptake of hydrogen in magnesium-doped gallium nitride: Theory and experiment, J APPL PHYS, 89(6), 2001, pp. 3195-3202
Control and elimination of cracking of AlGaN using low-temperature AlGaN interlayers
Authors: Han, J Waldrip, KE Lee, SR Figiel, JJ Hearne, SJ Petersen, GA Myers, SM
Citation: J. Han et al., Control and elimination of cracking of AlGaN using low-temperature AlGaN interlayers, APPL PHYS L, 78(1), 2001, pp. 67-69
Metal-organic vapor-phase epitaxial growth and characterization of quaternary AlGaInN
Authors: Han, J Figiel, JJ Petersen, GA Myers, SM Crawford, MH Banas, MA
Citation: J. Han et al., Metal-organic vapor-phase epitaxial growth and characterization of quaternary AlGaInN, JPN J A P 1, 39(4B), 2000, pp. 2372-2375
MOVPE growth of quaternary (Al,Ga,In)N for UV optoelectronics
Authors: Han, J Figiel, JJ Petersen, GA Myers, SM Crawford, MH Banas, MA Hearne, SJ
Citation: J. Han et al., MOVPE growth of quaternary (Al,Ga,In)N for UV optoelectronics, MRS I J N S, 5, 2000, pp. NIL_353-NIL_364
Simulation of H behavior in p-GaN(Mg) at elevated temperatures
Authors: Myers, SM Wright, AF Petersen, GA Seager, CH Crawford, MH Wampler, WR Han, J
Citation: Sm. Myers et al., Simulation of H behavior in p-GaN(Mg) at elevated temperatures, MRS I J N S, 5, 2000, pp. NIL_424-NIL_429
Optical spectroscopy of InGaN epilayers in the low indium composition regime
Authors: Crawford, MH Han, J Banas, MA Myers, SM Petersen, GA Figiel, JJ
Citation: Mh. Crawford et al., Optical spectroscopy of InGaN epilayers in the low indium composition regime, MRS I J N S, 5, 2000, pp. NIL_616-NIL_621
Formation of cavities in GaAs and InGaAs
Authors: Follstaedt, DM Myers, SM Barbour, JC Petersen, GA Reno, JL Dawson, LR Lee, SR
Citation: Dm. Follstaedt et al., Formation of cavities in GaAs and InGaAs, NUCL INST B, 160(4), 2000, pp. 476-498
Equilibrium state of hydrogen in gallium nitride: Theory and experiment
Authors: Myers, SM Wright, AF Petersen, GA Seager, CH Wampler, WR Crawford, MH Han, J
Citation: Sm. Myers et al., Equilibrium state of hydrogen in gallium nitride: Theory and experiment, J APPL PHYS, 88(8), 2000, pp. 4676-4687
Ion-implanted hydrogen in gallium nitride
Authors: Myers, SM Han, J Headley, TJ Hills, CR Petersen, GA Seager, CH Wampler, WR
Citation: Sm. Myers et al., Ion-implanted hydrogen in gallium nitride, NUCL INST B, 148(1-4), 1999, pp. 386-390
Extreme precipitation strengthening in ion-implanted nickel
Authors: Knapp, JA Myers, SM Follstaedt, DM Petersen, GA
Citation: Ja. Knapp et al., Extreme precipitation strengthening in ion-implanted nickel, J APPL PHYS, 86(11), 1999, pp. 6547-6556
Infrared and transmission electron microscopy studies of ion-implanted H in GaN
Authors: Seager, CH Myers, SM Petersen, GA Han, J Headley, T
Citation: Ch. Seager et al., Infrared and transmission electron microscopy studies of ion-implanted H in GaN, J APPL PHYS, 85(5), 1999, pp. 2568-2573
The band-gap bowing of AlxGa1-xN alloys
Authors: Lee, SR Wright, AF Crawford, MH Petersen, GA Han, J Biefeld, RM
Citation: Sr. Lee et al., The band-gap bowing of AlxGa1-xN alloys, APPL PHYS L, 74(22), 1999, pp. 3344-3346
Mossbauer study of the proximity gettering of ion-implanted Co-57 impurities by B-Si precipitates in Si
Authors: Deweerd, W Koops, G Pattyn, H Myers, SM Aselage, TL Headley, TJ Petersen, GA
Citation: W. Deweerd et al., Mossbauer study of the proximity gettering of ion-implanted Co-57 impurities by B-Si precipitates in Si, EUROPH LETT, 44(6), 1998, pp. 707-713
Risultati: 1-14 |