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Results: 1-20 |
Results: 20
Characterization of profiling techniques for ultralow energy arsenic implants
Authors: Kasnavi, R Sun, Y Mount, G Pianetta, P Griffin, PB Plummer, JD
Citation: R. Kasnavi et al., Characterization of profiling techniques for ultralow energy arsenic implants, EL SOLID ST, 4(1), 2001, pp. G1-G3
In situ x-ray photoelectron spectroscopy for thin film synthesis monitoring
Authors: Kelly, MA Shek, ML Pianetta, P Gur, TM Beasley, MR
Citation: Ma. Kelly et al., In situ x-ray photoelectron spectroscopy for thin film synthesis monitoring, J VAC SCI A, 19(5), 2001, pp. 2127-2133
Recent advances and perspectives in synchrotron radiation TXRF
Authors: Baur, K Brennan, S Werho, D Moro, L Pianetta, P
Citation: K. Baur et al., Recent advances and perspectives in synchrotron radiation TXRF, NUCL INST A, 467, 2001, pp. 1198-1201
X-ray standing-wave investigations of valence electronic structure - art. no. 125115
Authors: Woicik, JC Nelson, EJ Heskett, D Warner, J Berman, LE Karlin, BA Vartanyants, IA Hasan, MZ Kendelewicz, T Shen, ZX Pianetta, P
Citation: Jc. Woicik et al., X-ray standing-wave investigations of valence electronic structure - art. no. 125115, PHYS REV B, 6412(12), 2001, pp. 5115
Partial density of occupied valence states by x-ray standing waves and high-resolution photoelectron spectroscopy - art. no. 041403
Authors: Woicik, JC Nelson, EJ Kendelewicz, T Pianetta, P
Citation: Jc. Woicik et al., Partial density of occupied valence states by x-ray standing waves and high-resolution photoelectron spectroscopy - art. no. 041403, PHYS REV B, 6304(4), 2001, pp. 1403
Photoemission from the Sr/Si(001) interface
Authors: Herrera-Gomez, A Aguirre-Tostado, FS Sun, Y Pianetta, P Yu, Z Marshall, D Droopad, R Spicer, WE
Citation: A. Herrera-gomez et al., Photoemission from the Sr/Si(001) interface, J APPL PHYS, 90(12), 2001, pp. 6070-6072
Prospect for high brightness III-nitride electron emitter
Authors: Machuca, F Sun, Y Liu, Z Ioakeimidi, K Pianetta, P Pease, RFW
Citation: F. Machuca et al., Prospect for high brightness III-nitride electron emitter, J VAC SCI B, 18(6), 2000, pp. 3042-3046
Role of delocalized nitrogen in determining the local atomic arrangement and mechanical properties of amorphous carbon nitride thin films
Authors: Holloway, BC Kraft, O Shuh, DK Nix, WD Kelly, M Pianetta, P Hagstrom, S
Citation: Bc. Holloway et al., Role of delocalized nitrogen in determining the local atomic arrangement and mechanical properties of amorphous carbon nitride thin films, J VAC SCI A, 18(6), 2000, pp. 2964-2971
Geometrical structure of the 1/2-ML (2X1) and 1/3-ML (2X3) Ba/Si(001) interfaces
Authors: Herrera-Gomez, A Pianetta, P Marshall, D Nelson, E Spicer, WE
Citation: A. Herrera-gomez et al., Geometrical structure of the 1/2-ML (2X1) and 1/3-ML (2X3) Ba/Si(001) interfaces, PHYS REV B, 61(19), 2000, pp. 12988-12991
Application of synchrotron radiation to TXRF analysis of metal contamination on silicon wafer surfaces
Authors: Pianetta, P Baur, K Singh, A Brennan, S Kerner, J Werho, D Wang, J
Citation: P. Pianetta et al., Application of synchrotron radiation to TXRF analysis of metal contamination on silicon wafer surfaces, THIN SOL FI, 373(1-2), 2000, pp. 222-226
Direct measurement of valence-charge asymmetry by x-ray standing waves
Authors: Woicik, JC Nelson, EJ Pianetta, P
Citation: Jc. Woicik et al., Direct measurement of valence-charge asymmetry by x-ray standing waves, PHYS REV L, 84(4), 2000, pp. 773-776
Aluminum impurities in silicon: Investigation of x-ray Raman scattering intotal reflection x-ray fluorescence spectroscopy
Authors: Baur, K Kerner, J Brennan, S Singh, A Pianetta, P
Citation: K. Baur et al., Aluminum impurities in silicon: Investigation of x-ray Raman scattering intotal reflection x-ray fluorescence spectroscopy, J APPL PHYS, 88(8), 2000, pp. 4642-4647
Characterization of arsenic dose loss at the Si/SiO2 interface
Authors: Kasnavi, R Sun, Y Mo, R Pianetta, P Griffin, PB Plummer, JD
Citation: R. Kasnavi et al., Characterization of arsenic dose loss at the Si/SiO2 interface, J APPL PHYS, 87(5), 2000, pp. 2255-2260
Direct measurement of valence charge asymmetry in GaAs using X-ray standing waves
Authors: Nelson, E Woicik, J Pianetta, P
Citation: E. Nelson et al., Direct measurement of valence charge asymmetry in GaAs using X-ray standing waves, J SYNCHROTR, 6, 1999, pp. 341-343
Low Z total reflection X-ray fluorescence analysis - challenges and answers
Authors: Streli, C Kregsamer, P Wobrauschek, P Gatterbauer, H Pianetta, P Pahlke, S Fabry, L Palmetshofer, L Schmeling, M
Citation: C. Streli et al., Low Z total reflection X-ray fluorescence analysis - challenges and answers, SPECT ACT B, 54(10), 1999, pp. 1433-1441
Can studies of the II-VIs profit from the use of synchrotron radiation andthe DOE financial support thereof?
Authors: Spicer, WE Herrera-Gomez, A Pianetta, P
Citation: We. Spicer et al., Can studies of the II-VIs profit from the use of synchrotron radiation andthe DOE financial support thereof?, J ELEC MAT, 28(6), 1999, pp. 804-809
Synchrotron radiation-excited glancing incidence XRF for depth profile andthin-film analysis of light elements
Authors: Kregsamer, P Streli, C Wobrauschek, P Gatterbauer, H Pianetta, P Palmetshofer, L Brehm, LL
Citation: P. Kregsamer et al., Synchrotron radiation-excited glancing incidence XRF for depth profile andthin-film analysis of light elements, X-RAY SPECT, 28(4), 1999, pp. 292-296
Alkyl-terminated Si(111) surfaces: A high-resolution, core level photoelectron spectroscopy study
Authors: Terry, J Linford, MR Wigren, C Cao, RY Pianetta, P Chidsey, CED
Citation: J. Terry et al., Alkyl-terminated Si(111) surfaces: A high-resolution, core level photoelectron spectroscopy study, J APPL PHYS, 85(1), 1999, pp. 213-221
Interpretation of x-ray photoelectron spectra of elastic amorphous carbon nitride thin films
Authors: Holloway, BC Kraft, O Shuh, DK Kelly, MA Nix, WD Pianetta, P Hagstrom, S
Citation: Bc. Holloway et al., Interpretation of x-ray photoelectron spectra of elastic amorphous carbon nitride thin films, APPL PHYS L, 74(22), 1999, pp. 3290-3292
Bonding modifications in carbon nitride films induced by thermal annealing: An x-ray absorption near edge study
Authors: Jimenez, I Tong, WM Shuh, DK Holloway, BC Kelly, MA Pianetta, P Terminello, LJ Himpsel, FJ
Citation: I. Jimenez et al., Bonding modifications in carbon nitride films induced by thermal annealing: An x-ray absorption near edge study, APPL PHYS L, 74(18), 1999, pp. 2620-2622
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