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Verzellesi, G
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Citation: Gfd. Betta et al., Monolithic integration of Si-PIN diodes and n-channel double-gate JFET's for room temperature X-ray spectroscopy, NUCL INST A, 458(1-2), 2001, pp. 275-280
Authors:
Verzellesi, G
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Pignatel, GU
Citation: G. Verzellesi et al., Analytical model for the ohmic-side interstrip resistance of double-sided silicon microstrip detectors, IEEE NUCL S, 48(4), 2001, pp. 972-976
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Citation: Gf. Dalla Betta et al., Feasibility study for double-sided silicon microstrip detector fabricationat IRST, NUCL INST A, 431(1-2), 1999, pp. 83-91
Authors:
Verzellesi, G
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Citation: G. Verzellesi et al., Two-dimensional numerical simulation of edge-generated currents in type-inverted, p(+)-n single-sided silicon microstrip detectors, IEEE NUCL S, 46(4), 1999, pp. 1253-1257
Authors:
Verzellesi, G
Dalla Betta, GF
Bosisio, L
Boscardin, M
Pignatel, GU
Soncini, G
Citation: G. Verzellesi et al., On the accuracy of generation lifetime measurement in high-resistivity silicon using PN gated diodes, IEEE DEVICE, 46(4), 1999, pp. 817-820