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Results: 1-8 |
Results: 8

Authors: Vincenzi, D Butturi, MA Guidi, V Carotta, MC Martinelli, G Guarnieri, V Brida, S Margesin, B Giacomozzi, F Zen, M Pignatel, GU Vasiliev, AA Pisliakov, AV
Citation: D. Vincenzi et al., Development of a low-power thick-film gas sensor deposited by screen-printing technique onto a micromachined hotplate, SENS ACTU-B, 77(1-2), 2001, pp. 95-99

Authors: Betta, GFD Pignatel, GU Verzellesi, G Boscardin, M Fazzi, A Bosisio, L
Citation: Gfd. Betta et al., Monolithic integration of Si-PIN diodes and n-channel double-gate JFET's for room temperature X-ray spectroscopy, NUCL INST A, 458(1-2), 2001, pp. 275-280

Authors: Verzellesi, G Dalla Betta, GF Pignatel, GU
Citation: G. Verzellesi et al., Analytical model for the ohmic-side interstrip resistance of double-sided silicon microstrip detectors, IEEE NUCL S, 48(4), 2001, pp. 972-976

Authors: Brida, S Faes, A Guarnieri, V Giacomozzi, F Margesin, B Paranjape, M Pignatel, GU Zen, M
Citation: S. Brida et al., Microstructures etched in doped TMAH solutions, MICROEL ENG, 53(1-4), 2000, pp. 547-551

Authors: Fazzi, A Pignatel, GU Dalla Betta, GF Boscardin, M Varoli, V Verzellesi, G
Citation: A. Fazzi et al., Charge preamplifier for hole collecting PIN diode and integrated tetrode N-JFET, IEEE NUCL S, 47(3), 2000, pp. 829-833

Authors: Dalla Betta, GF Boscardin, M Bosisio, L Carmel-Barnea, N Ferrario, L Pignatel, GU Rachevskaia, I Zen, M Zorzi, N
Citation: Gf. Dalla Betta et al., Feasibility study for double-sided silicon microstrip detector fabricationat IRST, NUCL INST A, 431(1-2), 1999, pp. 83-91

Authors: Verzellesi, G Dalla Betta, GF Pignatel, GU Soncini, G
Citation: G. Verzellesi et al., Two-dimensional numerical simulation of edge-generated currents in type-inverted, p(+)-n single-sided silicon microstrip detectors, IEEE NUCL S, 46(4), 1999, pp. 1253-1257

Authors: Verzellesi, G Dalla Betta, GF Bosisio, L Boscardin, M Pignatel, GU Soncini, G
Citation: G. Verzellesi et al., On the accuracy of generation lifetime measurement in high-resistivity silicon using PN gated diodes, IEEE DEVICE, 46(4), 1999, pp. 817-820
Risultati: 1-8 |