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Results:
1-12
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Results: 12
Authors:
Kaminska, E
Piotrowska, A
Barcz, A
Reginski, K
Dluzewski, P
Kozlowski, M
Dynowska, E
Citation: E. Kaminska et al., Study of Zn-related structural transformations at p-GaAs/Ni/Zn interfaces relative to the formation of an ohmic contact, MAT SC S PR, 4(1-3), 2001, pp. 289-291
Authors:
Papis, E
Kudla, A
Piotrowski, TT
Golaszewska, K
Kaminska, E
Piotrowska, A
Citation: E. Papis et al., Ellipsometric investigations of (100) GaSb surface under chemical etching and sulfide treatment, MAT SC S PR, 4(1-3), 2001, pp. 293-295
Authors:
Piotrowski, TT
Piotrowska, A
Kaminska, E
Szopniewski, Z
Kolesnik, S
Wrobel, J
Gierlowski, P
Lewandowski, S
Citation: Tt. Piotrowski et al., Electron beam lithography and reactive ion etching of nanometer size features in niobium films, MAT SCI E C, 15(1-2), 2001, pp. 171-173
Authors:
Kaminska, E
Piotrowska, A
Barcz, A
Bour, D
Zielinski, M
Jasinski, J
Citation: E. Kaminska et al., Formation of ohmic contacts to MOCVD grown p-GaN by controlled activation of Mg, MAT SCI E B, 82(1-3), 2001, pp. 265-267
Authors:
Kaminska, E
Piotrowska, A
Barcz, A
Jasinski, J
Zielinski, M
Golaszewska, K
Davis, RF
Goldys, E
Tomsia, K
Citation: E. Kaminska et al., Zirconium mediated hydrogen outdiffusion from p-GaN, MRS I J N S, 5, 2000, pp. NIL_491-NIL_496
Authors:
Jaroszynski, J
Karczewski, G
Andrearczyk, T
Wojtowicz, T
Wrobel, J
Papis, E
Kaminska, E
Piotrowska, A
Dietl, T
Citation: J. Jaroszynski et al., Quantum Hall effect in the highly spin-polarized electron system, PHYSICA B, 280(1-4), 2000, pp. 378-379
Authors:
Figielski, T
Wosinski, T
Morawski, A
Makosa, A
Tkaczyk, Z
Wrobel, J
Kaminska, E
Papis, E
Piotrowska, A
Citation: T. Figielski et al., Voltage-controlled interference of ballistic electrons in an open quantum dot, PHYSICA B, 280(1-4), 2000, pp. 390-391
Sulfide treatment of GaSb surface: influence on the LPE growth of InGaAsSb/AlGaAsSb heterostructures
Authors:
Papis, E
Piotrowska, A
Kaminska, E
Golaszewska, K
Jung, W
Katcki, J
Kudla, A
Piskorski, M
Piotrowski, TT
Adamczewska, J
Citation: E. Papis et al., Sulfide treatment of GaSb surface: influence on the LPE growth of InGaAsSb/AlGaAsSb heterostructures, VACUUM, 57(2), 2000, pp. 171-178
Authors:
Piotrowska, A
Kaminska, E
Piotrowski, TT
Guziewicz, M
Golaszewska, K
Papis, E
Wrobel, J
Perchuc, L
Citation: A. Piotrowska et al., Application of CCl2F2- and CCl4-based plasmas for RIE of GaSb and related materials, VACUUM, 56(1), 2000, pp. 57-61
Authors:
Grabecki, G
Wrobel, J
Dietl, T
Byczuk, K
Papis, E
Kaminska, E
Piotrowska, A
Springholz, G
Pinczolits, M
Bauer, G
Citation: G. Grabecki et al., Quantum ballistic transport in constrictions of n-PbTe, PHYS REV B, 60(8), 1999, pp. R5133-R5136
Authors:
Guziewicz, M
Piotrowska, A
Kaminska, E
Golaszewska, K
Turos, A
Mizera, E
Winiarski, A
Szade, J
Citation: M. Guziewicz et al., Characteristics of sputter-deposited TiN, ZrB2 and W2B diffusion barriers for advanced metallizations to GaAs, SOL ST ELEC, 43(6), 1999, pp. 1055-1061
Authors:
Kaminska, E
Piotrowska, A
Jasinski, J
Kozubowski, J
Barcz, A
Golaszewska, K
Bremser, MD
Davis, RF
Citation: E. Kaminska et al., Interfacial microstructure of Ni/Si-based ohmic contacts to GaN (vol 94, pg 383, 1998), ACT PHY P A, 94(5-6), 1998, pp. 857-857
Risultati:
1-12
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